Exploring Dopant Choice in HfO2 FE Layer for Negative Capacitance Junctionless FinFET Based Sensors through Sentaurus TCAD

Exploring Dopant Choice in HfO2 FE Layer for Negative Capacitance Junctionless FinFET Based Sensors through Sentaurus TCAD | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Systematic Review Exploring Dopant Choice in HfO 2 FE Layer for Negative Capacitance Junctionless FinFET Based Sensors through Sentaurus TCAD Yashvardhan Singh, Megh Ashok Giri This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7896806/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract This paper presents an exploratory investigation of ferroelectric dopant selection in HfO 2 layers on negative capacitance junctionless FinFET-based sensors using Sentaurus TCAD. We examine the fundamental mechanisms behind NC JL FinFET operation and implement Pd-gate hydrogen sensing through work function modulation. The ferroelectric HfO 2 layer is modeled using the time-dependent Ginzburg-Landau (Landau-Khalatnikov) framework with dopant-specific parameters for Zr, Y, Gd, and Si systems. Device structures are implemented in Sentaurus SDE with complete geometric and doping specifications. Our variational study reveals minimal electrical characteristic differences (Vth, Id-Vg behavior) among dopant systems in the simulated structure, suggesting that the specific NC-JL-FinFET geometry and operating conditions may reduce dopant sensitivity. These findings provide a reproducible TCAD framework for ferroelectric sensor design and highlight the need for further investigation into structure-dopant interactions. Electronic Materials and Devices Electrical Engineering Negative capacitance Junctionless FinFET Ferroelectric HfO2 Hydrogen sensor Biosensor Sentaurus TCAD Full Text Additional Declarations The authors declare no competing interests. Supplementary Files JLNCFinFETSensorsFEDopantAnalysis.zip Latex File Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. 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