Lateral carrier diffusion in ion-implanted ultra-small blue III-nitride microLEDs.

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Abstract

Abstract Ultra-small micro-light emitting diodes (µLEDs), sized below 10 µm, are indispensable to create next-generation augmented and virtual reality (AR/VR) devices. Their high brightness and low power consumption could not only enhance the user experience by providing vivid and lifelike visuals but also extend device longevity. However, a notable challenge emerges: a decrease in efficiency with reduced size. This study casts light on this critical issue, investigating the lateral carrier diffusion in ion-implanted µLEDs. The implanted area restricts the carrier injection and defines the µLED size to diameters of 10, 5 and 2 µm without introduction of non-radiative recombination centres in the quantum well area. We observed a drop of efficiency for smaller devices, similarly as in the case of conventional µLEDs with etched sidewalls. Electroluminescence of µLEDs was studied using a Gaussian beam telescope to analyse light intensity profiles and hence the spatial carrier distribution within the active region of µLEDs. Lateral diffusion length was determined to be 11.2 µm at j=1 A/cm2 and decreased down to 2.4 µm for j=1000 A/cm2. We explain the underlying mechanism behind the size-dependent efficiency observed in µLEDs, attributing it to lateral carrier diffusion.
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Lateral carrier diffusion in ion-implanted ultra-small blue III-nitride microLEDs. | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Lateral carrier diffusion in ion-implanted ultra-small blue III-nitride microLEDs. Julia Slawinska, Grzegorz Muziol, Anna Kafar, Czeslaw Skierbiszewski This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-3920552/v2 This work is licensed under a CC BY 4.0 License Status: Posted Version 2 posted You are reading this latest preprint version Show more versions Abstract Ultra-small micro-light emitting diodes (µLEDs), sized below 10 µm, are indispensable to create next-generation augmented and virtual reality (AR/VR) devices. Their high brightness and low power consumption could not only enhance the user experience by providing vivid and lifelike visuals but also extend device longevity. However, a notable challenge emerges: a decrease in efficiency with reduced size. This study casts light on this critical issue, investigating the lateral carrier diffusion in ion-implanted µLEDs. The implanted area restricts the carrier injection and defines the µLED size to diameters of 10, 5 and 2 µm without introduction of non-radiative recombination centres in the quantum well area. We observed a drop of efficiency for smaller devices, similarly as in the case of conventional µLEDs with etched sidewalls. Electroluminescence of µLEDs was studied using a Gaussian beam telescope to analyse light intensity profiles and hence the spatial carrier distribution within the active region of µLEDs. Lateral diffusion length was determined to be 11.2 µm at j=1 A/cm2 and decreased down to 2.4 µm for j=1000 A/cm2. We explain the underlying mechanism behind the size-dependent efficiency observed in µLEDs, attributing it to lateral carrier diffusion. Physical sciences/Physics/Electronics, photonics and device physics/Photonic devices Physical sciences/Optics and photonics/Lasers, LEDs and light sources Full Text Additional Declarations The authors declare no competing interests. Supplementary Files SupplementaryinformationJSlawinska.pdf Cite Share Download PDF Status: Posted Version 2 posted You are reading this latest preprint version Show more versions Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. 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