Concurrently Thermal Reduction and Boron-Doped Graphene Oxide Using Metal-Organic Chemical Vapor Deposition for Ultraviolet Sensing Application

We used a metal-organic chemical vapor deposition technique to synthesize a boron-doped reduced graphene oxide (B-rGO) material with various electrical characteristics, dependent on simultaneous reduction and doping procedures. The effect of the doping level on the B bonding in the reduced graphene oxide (rGO) layer controlled by the annealing temperature was investigated using X-ray photoelectron spectroscopy (XPS). The XPS data indicated that the B-rGO layer had a higher B concentration and a considerable number of O-B bonds as a result of the appreciable annealing temperature, which resulted in a decreased work function and Schottky contact between B-rGO and n-type Si. Owing to the higher proportion of B-C and B-C3 bonding in the B-rGO device than that in the rGO/Si device, the lower Schottky barrier height of the B-rGO/n-Si vertical junction photodetector resulted in a higher responsivity. This work suggests a facile method of B doping to alter the electrical properties of graphene materials.