In1-xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for highly sensitive Photo detector

This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In 1 − x Ga x As. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of sensitivity, but in the proposed photosensor, change in subthreshold current has been used as the detecting parameters for sensitivity (I illumination /I dark ). The scientifically electrons study and the photo-conductive characteristics of In 1 − x Ga x As CL-NWMOSFET are taken through Silvaco Atlas Tools. After the analysis of In 1 − x Ga x As dual Metal Gate Stacking Cylindrical NWMOSFET responds to detectable spectrum (~ 450 nm), incidents light with constant, reversible and fast response by responsivity (4.3 mAW − 1 ), high I illumination /I dark (1.36 * 10 9 ) and quantum-efficiency (1.12 %). The obtained results of In 1 − x Ga x As DMG CL-NWMOSFET based photodetectors have the potential in optoelectronics applications.