Transverse magnetoresistance, Hall mobility and Hall constant of thin Cu films deposited onto cleaved mica: Evidence of weak Anderson localization.

Transverse magnetoresistance, Hall mobility and Hall constant of thin Cu films deposited onto cleaved mica: Evidence of weak Anderson localization. | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Transverse magnetoresistance, Hall mobility and Hall constant of thin Cu films deposited onto cleaved mica: Evidence of weak Anderson localization. Eva Díaz, Guillermo Herrera, Simón Oyarzún, Raul Munoz This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-514413/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 8 You are reading this latest preprint version Abstract We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 K and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K< TL/2 (where L=39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D<L/2. The sample where D=20.2 nm exhibits a negative magnetoresistance at B 2 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that electron scattering by disordered grain boundaries found along L leads to weak Anderson localization , confirming the localization phenomena predicted by the quantum theory of resistivity of nanometric metallic connectors. Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connector with decreasing wire dimensions (D<L/2) employed in the design of Integrated Circuits. Electronic Materials and Devices Electrical Engineering Materials Engineering Nanoscience Anderson localization magnetoresistance Hall effect Full Text Due to technical limitations, full-text HTML conversion of this manuscript could not be completed. However, the manuscript can be downloaded and accessed as a PDF. Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Review Version 1 posted Editorial decision: Major revision 16 Jun, 2021 Reviews received at journal 10 Jun, 2021 Reviewers agreed at journal 22 May, 2021 Reviewers invited by journal 22 May, 2021 Editor assigned by journal 22 May, 2021 Editor invited by journal 19 May, 2021 Submission checks completed at journal 19 May, 2021 First submitted to journal 10 May, 2021 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-514413","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":27885374,"identity":"b9a062da-a73b-4fc1-ade4-f491978e9f28","order_by":0,"name":"Eva Díaz","email":"","orcid":"","institution":"Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Eva","middleName":"","lastName":"Díaz","suffix":""},{"id":27885375,"identity":"456195b2-b2f2-4166-8874-03a398582403","order_by":1,"name":"Guillermo Herrera","email":"","orcid":"","institution":"Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Guillermo","middleName":"","lastName":"Herrera","suffix":""},{"id":27885376,"identity":"72b741e6-0254-47f9-b00d-4bbfe2ca3f31","order_by":2,"name":"Simón Oyarzún","email":"","orcid":"","institution":"Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Simón","middleName":"","lastName":"Oyarzún","suffix":""},{"id":27885377,"identity":"6f92f523-e20b-43dc-a6d5-e21248c62195","order_by":3,"name":"Raul Munoz","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABCElEQVRIiWNgGAWjYFADdjDJzMAPohIKiNHCDCUlG0BaDEjRYnAAROPRYt5+Ok26oKKOgb+Zx/BzRY21nPH51YkfHhgwyPOLHcCqReZM7jbpGWfYGCQO8xhLnjmWbmx24+1mCaDDDGfOTsCqRYIBqIW3jYeB4TBbgmQD2+HEbTfObgBpSTC4jUML/1uQFgkG+cNsyT8b/h1O3Dzj7OYfeLVIgG0xYDA4zHxMsrHtcOIG/t5t+G2ReLvZmudMAo8hUItlY1+6scQN3m0WCQYSuP3Cn7vxNk9FnZzc8cbmmw3frOX4+89uvvmjwkaeXxq7FhjgQTIlARIuJAD+A6SoHgWjYBSMghEAAEo5V0Epsb2uAAAAAElFTkSuQmCC","orcid":"","institution":"Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile","correspondingAuthor":true,"submittingAuthor":false,"prefix":"","firstName":"Raul","middleName":"","lastName":"Munoz","suffix":""}],"badges":[],"createdAt":"2021-05-10 20:29:00","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-514413/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-514413/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":13635331,"identity":"a004dc88-ee58-456c-a91f-ada21051dfb2","added_by":"auto","created_at":"2021-09-17 08:36:35","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":2776750,"visible":true,"origin":"","legend":"","description":"","filename":"PaperScientificReports.pdf","url":"https://assets-eu.researchsquare.com/files/rs-514413/v1_covered.pdf"},{"id":9400123,"identity":"d5b2bc8d-8bdb-45fb-a76d-a30fa83ca8c0","added_by":"auto","created_at":"2021-05-20 17:45:41","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":2773164,"visible":true,"origin":"","legend":"","description":"","filename":"PaperScientificReports.pdf","url":"https://assets-eu.researchsquare.com/files/rs-514413/v1_covered.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Transverse magnetoresistance, Hall mobility and Hall constant of thin Cu films deposited onto cleaved mica: Evidence of weak Anderson localization.","fulltext":[{"header":"Full Text","content":"\u003cp\u003eDue to technical limitations, full-text HTML conversion of this manuscript could not be completed. 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The mean grain diameters are D=(8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. \u003c/p\u003e\u003cp\u003eThe magnetoresistance signal is positive in samples where D\u0026gt;L/2 (where L=39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D\u0026lt;L/2. The sample where D=20.2 nm exhibits a negative magnetoresistance at \u003cem\u003eB\u003c/em\u003e \u0026lt; 2 Tesla and a positive magnetoresistance at B \u0026gt; 2 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that\u003cem\u003e electron scattering by disordered grain boundaries found along L leads to weak Anderson localization\u003c/em\u003e, confirming the localization phenomena predicted by the quantum theory of resistivity of nanometric metallic connectors.\u003cem\u003e Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connector with decreasing wire dimensions (D\u0026lt;L/2) employed in the design of Integrated Circuits.\u003c/em\u003e\u003c/p\u003e","manuscriptTitle":"Transverse magnetoresistance, Hall mobility and Hall constant of thin Cu films deposited onto cleaved mica: Evidence of weak Anderson localization.","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2021-05-20 17:45:26","doi":"10.21203/rs.3.rs-514413/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"Major revision","date":"2021-06-17T03:43:12+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2021-06-10T04:34:02+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"d70d3ec0-f8b1-4d88-8e7f-e143ff5494e4","date":"2021-05-22T16:00:27+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2021-05-22T15:35:44+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2021-05-22T15:20:57+00:00","index":"","fulltext":""},{"type":"editorInvited","content":"","date":"2021-05-19T11:57:53+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2021-05-19T11:20:28+00:00","index":"","fulltext":""},{"type":"submitted","content":"Scientific Reports","date":"2021-05-10T20:14:50+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"scientific-reports","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scirep","sideBox":"Learn more about [Scientific Reports](http://www.nature.com/srep/)","snPcode":"","submissionUrl":"","title":"Scientific Reports","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Scientific Reports","inReviewEnabled":true,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"174c93ae-3018-40bd-b1ee-2e8798138744","owner":[],"postedDate":"May 20th, 2021","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[{"id":4462673,"name":"Electronic Materials and Devices"},{"id":4462674,"name":"Electrical Engineering"},{"id":4462675,"name":"Materials Engineering"},{"id":4462676,"name":"Nanoscience"}],"tags":[],"updatedAt":"2021-08-03T04:59:08+00:00","versionOfRecord":[],"versionCreatedAt":"2021-05-20 17:45:26","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-514413","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-514413","identity":"rs-514413","version":["v1"]},"buildId":"FbvkV6FR0MCFSLy54lSbu","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}