Investigation of electrical and structural properties of Ag/TiO2/n-InP/Au Schottky diodes with different thickness TiO2 interface
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CC-BY-4.0
Abstract
In this study, structural and electrical properties of Ag/TiO 2 /n-InP/Au Schottky barrier diodes are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO 2 layer thickness. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO 2 interfacial layer is a more ideal diode. The reason for this is argued in main text and conclusion section.
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- europepmc
- last seen: 2026-05-19T01:45:01.086888+00:00
- unpaywall
- last seen: 2026-05-29T02:00:03.542394+00:00
License: CC-BY-4.0