Printed Silver Electrode for Silicon-based Schottky Barrier Diode: High Rectification Ratio Enabled by Ag/p-Si Interface Exceeds Theoretical Barrier Height

The printed electronics enables the fabrication of a variety of devices and is becoming important as critical techniques for some applications in diverse areas. In the area the junctions formed at the contact between printed electrodes and semiconductors remain a crucial challenge. In this paper, we performed the first demonstration of the silicon-based Schottky barrier diode by printing method. For the demonstration, the electrode was fabricated through the printing of the silver nanoink on p-type silicon and sintering. Measurement of I-V characteristics, scanning electron microscopy and atomic force microscopy together with Kelvin probe force microscopy were performed for understanding the interface between silver and silicon.