Pressure Sensor Chip with New Electrical Circuit for 10 kPa Range

Abstract Characteristics of high sensitivity MEMS pressure sensor chip for 10 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The experimental results prove that pressure sensor chip PDA-NFL with 4.0×4.0 mm2 chip area has sensitivity S = 10.1 ± 2.3 mV/V/kPa with nonlinearity of 2KNL = 0.26 ± 0.12 %/FS (pressure is applied from the back side of pressure sensor chip).