A variational formulation for modeling a semiconductor sample design, some improvements and corrections

A variational formulation for modeling a semiconductor sample design, some improvements and corrections | Authorea try { document.documentElement.classList.add('js'); } catch (e) { } var _gaq = _gaq || []; _gaq.push(['_setAccount', 'G-8VDV14Y67G']); _gaq.push(['_trackPageview']); (function() { var ga = document.createElement('script'); ga.type = 'text/javascript'; ga.async = true; ga.src = ('https:' == document.location.protocol ? 'https://ssl' : 'http://www') + '.google-analytics.com/ga.js'; var s = document.getElementsByTagName('script')[0]; s.parentNode.insertBefore(ga, s); })(); Skip to main content Preprints Collections Wiley Open Research IET Open Research Ecological Society of Japan All Collections About About Authorea FAQs Contact Us Quick Search anywhere Search for preprint articles, keywords, etc. Search Search ADVANCED SEARCH SCROLL This is a preprint and has not been peer reviewed. Data may be preliminary. 7 April 2025 V1 Latest version Share on A variational formulation for modeling a semiconductor sample design, some improvements and corrections Authors : Fabio Botelho 0000-0002-3890-8263 [email protected] and Fabio Silva Botelho Authors Info & Affiliations https://doi.org/10.22541/au.174405255.52427474/v1 200 views 109 downloads Contents Abstract Supplementary Material Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract This short communication develops a variational formulation for modeling a silicon semiconductor design utilizing phosphorus atoms as a dopant substance. The results are based on standard tools of calculus of variations and optimization theory. Supplementary Material File (semi-conductor-april-2025.pdf) Download 202.52 KB Information & Authors Information Version history V1 Version 1 07 April 2025 Copyright This work is licensed under a Non Exclusive No Reuse License. Keywords 35q31 lagrange multipliers optimization. msc: 35q81 phosphorous dopant silicon semiconductor strong variational formulation Authors Affiliations Fabio Botelho 0000-0002-3890-8263 [email protected] View all articles by this author Fabio Silva Botelho Department of Mathematics, Federal University of Santa Catarina, UFSC Florianópolis View all articles by this author Metrics & Citations Metrics Article Usage 200 views 109 downloads .FvxKWukQNSOunydq8rnd { width: 100px; } Citations Download citation Fabio Botelho, Fabio Silva Botelho. A variational formulation for modeling a semiconductor sample design, some improvements and corrections. Authorea . 07 April 2025. DOI: https://doi.org/10.22541/au.174405255.52427474/v1 If you have the appropriate software installed, you can download article citation data to the citation manager of your choice. Simply select your manager software from the list below and click Download. 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