The Influence of Al Doping on the Raman Characteristics and some physical properties of ZnO thin films deposited by dip-coating process | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article The Influence of Al Doping on the Raman Characteristics and some physical properties of ZnO thin films deposited by dip-coating process Nassima Seghairi, Salima Benkara, Seddik Bouabida, Houda Ghamri, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7333245/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract In this study, we systematically analyze how Aluminum doping affects the physicochemical properties of ZnO. Zn 1 − x O:Al x was used to express the aluminum doping levels in the solution, where x might be 0; 0.5; 1; 2, and 4 weight percent Al. Key parameters, including phase composition, particle size, and purity, were examined through X-ray diffraction (XRD). Furthermore, the morphological features such as the shape and surface structure of the samples were evaluated using scanning electron microscopy (SEM). The chemical composition of the deposited films was analyzed using energy dispersive X-ray spectroscopy (EDS). Optical investigations demonstrated that the direct band gap gradually decreased with higher Al doping concentrations. Raman spectroscopy was employed to examine the crystallization properties of the films. Materials Chemistry Al Doping ZnO Raman Characteristics Optical study dip-coating Full Text Additional Declarations The authors declare no competing interests. Supplementary Files NoveltyStatement.docx Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7333245","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":498040587,"identity":"b7bed1e3-0d81-4153-9603-f9f6b5792080","order_by":0,"name":"Nassima Seghairi","email":"","orcid":"","institution":"Physic Department, Oum El Bouaghi University, Oum El Bouaghi, Algeria","correspondingAuthor":false,"prefix":"","firstName":"Nassima","middleName":"","lastName":"Seghairi","suffix":""},{"id":498040588,"identity":"ffc684c9-99ae-4a91-9370-f50e44191868","order_by":1,"name":"Salima Benkara","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABDklEQVRIie3QMUvDQBTA8RcO2uXSPaDNVzi4QQrSz+JxoEu6CxaMCO0S7dqP0U0EhxcP4hKaNdCCuGTqUBAEUYovYrYL1s3h/oRwyfHjJQfgcv3DBAD7WbIYAY6bZ/y+fiFeTU7/SOhmmo12ctS9MeL9YQjhNL16LMeFuutyAdvzNfQKuxkkS62SSoPIVWyibKXur7nw5nkFAdqJKCOJHBl9YU06K7UwnbMPf2JApLGdPG9k+omXEM5eiOyWNTlh/o6IsQqawqXmSLslTRlNkAhD5sdEMjsZJJGUB/jERUlTRrda1sSbZxUP8rYTy2WwwYt+ONPmNXobHi4K+ofteN1vO7Emvscbl8vlcu3dF5Tqahepw5lUAAAAAElFTkSuQmCC","orcid":"","institution":"Electrical Engineering Department, Oum El Bouaghi University, Algeria","correspondingAuthor":true,"prefix":"","firstName":"Salima","middleName":"","lastName":"Benkara","suffix":""},{"id":498040589,"identity":"8070e3dc-4910-4c83-894d-2e660bf6a525","order_by":2,"name":"Seddik Bouabida","email":"","orcid":"","institution":"Electrical Engineering Department, Faculty of Sciences and Technology, University of Echahid Cheikh Larbi Tebessi,Tebessa, Algeria.","correspondingAuthor":false,"prefix":"","firstName":"Seddik","middleName":"","lastName":"Bouabida","suffix":""},{"id":498040590,"identity":"0bd94ae3-fe55-4d0e-8642-08e6d860052b","order_by":3,"name":"Houda Ghamri","email":"","orcid":"","institution":"Laboratory of Physico and Chemical Studies Materials (LEPCM), Faculty of Materials Science, University Batna1, Batna, Algeria.","correspondingAuthor":false,"prefix":"","firstName":"Houda","middleName":"","lastName":"Ghamri","suffix":""},{"id":498040591,"identity":"247605a2-08b4-44da-b42d-644b131e4cf4","order_by":4,"name":"Lutfi Ozyuzer","email":"","orcid":"","institution":"Department of Physics, Izmir Institute of Technology, 35430 Urla, Izmir, Turkey","correspondingAuthor":false,"prefix":"","firstName":"Lutfi","middleName":"","lastName":"Ozyuzer","suffix":""}],"badges":[],"createdAt":"2025-08-09 10:26:38","currentVersionCode":1,"declarations":{"humanSubjects":false,"vertebrateSubjects":false,"conflictsOfInterestStatement":false,"humanSubjectEthicalGuidelines":false,"humanSubjectConsent":false,"humanSubjectClinicalTrial":false,"humanSubjectCaseReport":false,"vertebrateSubjectEthicalGuidelines":false},"doi":"10.21203/rs.3.rs-7333245/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7333245/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":88850035,"identity":"b16a1256-4df3-4bf7-9b88-dc65aa1f9139","added_by":"auto","created_at":"2025-08-12 05:10:08","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1035953,"visible":true,"origin":"","legend":"","description":"","filename":"ManuscriptBENKARA.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7333245/v1_covered_41c1e2d4-0f0c-4525-a756-57f5b1df3425.pdf"},{"id":88848832,"identity":"9f2bafb1-2142-4170-81d0-e3bf5a5cf409","added_by":"auto","created_at":"2025-08-12 04:46:07","extension":"docx","order_by":1,"title":"","display":"","copyAsset":false,"role":"supplement","size":23868,"visible":true,"origin":"","legend":"","description":"","filename":"NoveltyStatement.docx","url":"https://assets-eu.researchsquare.com/files/rs-7333245/v1/cbb7e91b6b21a00a64d067e9.docx"}],"financialInterests":"The authors declare no competing interests.","formattedTitle":"\u003cp\u003eThe Influence of Al Doping on the Raman Characteristics and some physical properties of ZnO thin films deposited by dip-coating process\u003c/p\u003e","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"Larbi Ben M'hidi University of Oum El Bouaghi","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"
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