Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications

Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications Ashish Kumar, Marem Padma Praneeth, AlaaDdin Al-Shidaifat, Hanjung Song, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-2704726/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract With the utilization of UV-C radiation sterilizers on the ascension in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill effects on humans. This requires detection systems with felicitous spectral replication to the “invisible to the unclad eye” radiation leaks with utmost sensitivity and swiftness. Gallium Oxide (Ga 2 O 3 ), a semiconductor, has gained a lot of attention among researchers due to its ultra-wideband gap (4.9eV) and high critical field with a value of 8 MV/cm. It is Transparent Conductive Oxide (TCO). Ga 2 O 3 has five different atomic structures of Ga 2 O 3 , namely, the monoclinic ( β -Ga 2 O 3 ), rhombohedral (α), defective spinel (γ), cubic (δ), and orthorhombic (ε) structures. Of these, the β -polymorph is selected because of band gap energy (Eg ≈ 4.7–4.9 eV), it is highly stable in thermal and chemical properties. In this context, the present article demonstrates the best and most suitable technique for the deposition of β -Ga 2 O 3 (Gallium Oxide). This work demonstrates the layer deposition of β -Ga 2 O 3 (Gallium Oxide) thin-film with MIST-CVD (Chemical Vapor Deposition) and optimization of the deposited layer to the extent of using different techniques and analyzing different plots. This deposited layer on a substrate is used for applications of gas sensors or Ultraviolet-Photodetectors (UV-PDs. This article has also demonstrated the successful application of optimized thin film for gas sensing. Ultraviolet-Photodetectors β-Ga2O3 Transparent Conductive Oxide (TCO) MIST-CVD (Chemical Vapor Deposition) Ultra-wideband gap UV-C Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 I. Introduction As technology advances, we are in need to reduce the size of transistors (smaller transistors switch faster because they draw less current and have less capacitance, which means less charge must be moved to switch the terminals on and off, which can save power) [ 1 ]. To reduce the size of the transistor, we must focus on the larger band gap. The band gap is the amount of energy required to jolt an electron into a conducting state. Systems made of high-bandgap materials can be thinner, lighter, and handle more power than systems made of lower-bandgap materials [ 2 ]. A high bandgap also allows these systems to operate at higher temperatures, reducing the need for bulky cooling systems. As a result, we must select an element that is both a semiconductor and has a larger band gap than silicon (Si) [ 3 ]. Because SiC and GaN have a wide band gap, they are suitable for our device fabrication. However, it made our device more expensive [ 4 ]. Our goal is to find the most cost-effective and efficient solution. The bandgap of gallium oxide (about 4.9 eV ) is greater than that of silicon carbide (about 3.4 eV), gallium nitride (about 3.3 eV ), and silicon (1.1 eV ) [ 5 ]. This semiconductor material is also a Transparent Conductive Oxide (TCO), which gives gallium oxide an advantage over other materials in solar cell applications, such as silicon [ 6 ]. Gallium is a naturally occurring unstable and rare element. Ga 2 O 3 is soluble in most acids and alkalis, but it is insoluble and stable in water [ 7 ]. Ga 2 O 3 has five different polymorphs (α, β, γ, δ, ε), and the most stable of these structures is β -Ga 2 O 3 [ 8 ]. Gallium oxide nanomaterials have exceptional optical properties, and their photoelectric conversion is widely used in fields such as UV detection and optoelectronic devices [ 9 ]. Ga 2 O 3 is chemically and thermally stable in comparison with most semiconductors [ 5 ]. There are primarily two deposition techniques for thin film layer deposition, PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition) [ 10 ], [ 11 ]. It was classified into several types, including PLD, MBE, MIST-CVD, etc [ 12 ]. The material deposited is physically moved onto the substrate during physical deposition processes. The material on the substrate is formed by no chemical reaction. Thin film deposition with physical vapor deposition is rapidly expanding, it has many applications in optoelectronics among others. In the PVD process, materials grow from a condensed phase to a vapor phase and then back to a thin film condensed phase. It was classified into many types like Sputtering, evaporation, etc [ 13 ]. Thin films can be deposited on substrates using a sputtering deposition. It is the process of ejecting atoms by bombarding a solid or liquid target with energetic particles, most commonly ions [ 14 ]. It is less expensive than other PVDs. However, the issue is limited scalability [ 15 ]. Ion plating is a type of PVD that involves bombarding the substrate with atomic-sized energetic particles and depositing atoms of film material [ 16 ]. It has low deposition temperatures, a large deposition area, and rapid growth rates [ 17 ]. However, the issue here was low productivity and high cost [ 18 ]. However, this process is not suitable for us. The laser pulse vaporizes the desired material, and an evaporation source (which can be a thermally heated crucible, electron beam, laser beam, etc.) is used. This process is called Pulsed Laser Evaporation (PLE) [ 19 , 20 ]. A focused pulsed laser beam is used in Pulsed Laser Deposition (PLD) to deposit thin films on a substrate [ 21 ]. Smith and Turner discovered it in 1965 for the preparation of semiconductors [ 22 ]. This deposition technique has been used for a variety of oxides, nitrides, carbides, and other materials [ 23 ]. A pulsed and focused laser beam strikes elementary or alloy targets at a 45° angle in an ultrahigh vacuum (UHV) chamber. The atoms and ions that have been ablated from the target(s) are deposited on substrates [ 24 ]. Molecular Beam Epitaxy (MBE) is a thin-film deposition technology that uses atomic or molecular beams generated in Knudsen cells contained in an ultra-high vacuum chamber to deposit a thin single-crystal layer on a single-crystal substrate [ 25 ]. There are several ways to generate source beams, including i. melting and evaporation of solids or liquids contained in crucibles, ii. solid sublimation from a crucible, iii. ion beam bombardment, and iv. cracking various chemical species, etc. [ 26 ]. Chemical vapor deposition (CVD) is a popular method of material processing. Most of its applications involve the application of stable thin-film coatings to surfaces, but it is also used to supply high-purity bulk materials and powders, as well as the fabrication of composite materials via infiltration strategies. It has a high deposition growth, purity, and stability [ 27 ]. It has deposited at high temperatures [ 28 ]. MIST Chemical Vapor Deposition (MIST-CVD) is a relatively new fabrication technology used to grow oxide semiconductors. MIST CVD is a deposition method that is typically used under a vacuum to produce high-quality, high-performance solid materials [ 29 ]. MIST CVD is the process of producing non-volatile solid thin films on substrates through chemical reactions between organometallic or halide compounds to be deposited and other gases [ 30 ]. It is a CVD technique with MIST added to the Chemical Vapor Deposition process apparatus. This process of deposition is smoother than CVD. Now we must choose the best and most cost-effective technique for the deposition of the thin firm. MIST CVD outperforms other techniques in terms of efficiency and cost-effectiveness. MIST CVD for Ga 2 O 3 layer deposition is being used for this purpose. Ii. Experimental Details A. Sample Preparation Sample preparation starts with sonication of a ~ 1.5 cm 2 sapphire substrate in 5 mL of ethanol for 15 min and then is dried by nitrogen gas purging with an air jet. Now, this sample is placed inside the CVD tube for further experimental process. B. CVD System The Chemical Vapor Deposition machine was cleaned and pumped using a roughing pump to achieve a pressure of about 6 x 10 − 2 millibars . To remove certain contamination like moisture, and air from inside the tube, argon gas was purged for 30 min . The temperature was raised to 500°C with a ramp rate of 20°C per minute. C. MIST Setup Preparation THE MIST CVD process consists of 2 stages. • Preparation of MIST • Transporting MIST through the carrier gas 3/4th volume was filled with water in MIST Setup, and 100 mg of Gallium was placed inside this MIST setup. The MIST setup was sealed to prevent any leakage of mist outside of the mist setup. MIST started to form in the mist setup. The MIST setup was placed on top of a hot plate with a temperature fixed at 100°C. After 10 minutes, nitrogen gas (flowrate 60 sccm) coming out of the MIST setup carrying the mist, was mixed with oxygen gas (flowrate 20 sccm) before flowing inside the CVD tube. D. CVD Chamber In the CVD system, the chamber is the part where the sample substrate was placed for layer deposition. Here MIST flow rate was kept at 60 sccm and the oxygen flow rate was kept at 20 sccm. Vapor pressure was adjusted in the chamber for MIST to settle down on the sample S1 substrate. The deposition time was 1 hour, and the gas pressure is set to 1 millibar. After deposition, sample S1 was cooled down under argon involvement. The exhaust pump sucks out unnecessary air out of the chamber. All these parameters were repeated for 3 samples except temperature. For sample S1 preparation temperature was fixed at 550°C. For Sample S2 preparation, the same parameters were repeated except the temperature has been raised from 550°C to 600°C. For Sample S3 preparation, the same parameters were repeated except the temperature has been raised from 600°C to 650°C. After deposition, all the samples have been characterized for morphological analysis, elemental analysis, and optical analysis. Iii. Material Analysis Scanning Electron Microscope gave a morphological analysis on 3 sample substrates that had been used for Ga 2 O 3 deposition. Figure 3 demonstrates the morphology of the Ga 2 O 3 layer after annealing at a 5 µm scale with 3 samples, obtained using FESEM. Ga 2 O 3 layer deposition is done for 3 samples at 550°C, 600°C, and 650°C temperatures respectively. According to the results from FESEM, Fig. 3 (b) has a smooth-morphology compared to other samples. The thickness of the 3 samples has been estimated using cross-sectional imaging using FESEM. Figure 4 demonstrates the cross-sectional view of the Ga 2 O 3 layer after annealing with 3 samples at 550°C,600°C, and 650°C temperatures, obtained using SEM. A smooth and efficient cross-sectional image in 3 samples is discovered in sample S2. Figure (5) demonstrates XRD plots of sample S1, S2, and S3 substrates. These plots depict common diffraction peaks of 2 θ at various angles for different phases of Ga 2 O 3 . Figure 5 (a) shows common diffraction peaks of 2 θ at 18.93°, 35.6°, 38.56° and 63.33° which correspond to (-201), (111), (-311), and (-710) of sample S1 substrate at temperature 550°C and other small peaks at 30.3°, 43.6°, 53.4°, 59.7° and 71.4° which correspond to (400), (113), (104), (313) and (444) [ 31 ], [ 32 ]. In sample S1, plane (113) at 43.6° 2 θ angle belongs to the α phase of Ga 2 O 3 , plane (104) at 53.4° 2 θ angle belongs to ε phase of Ga 2 O 3, plane (444) at 71.4° 2 θ angle belongs to δ phase of Ga 2 O 3 and planes (-201), (400), (111), (-311), (313), (-710) at 18.93°, 30.3°, 35.6°, 38.56°, 59.7°, and 63.33° 2 θ angles belongs to β phase of Ga 2 O 3 [ 31 ], [ 32 ]. In sample S1, since most atomic planes shown in XRD belong to the β phase of Ga 2 O 3 , it can be said that the sample is β-Ga 2 O 3 . Figure 4. (a) Shows SEM-cross-sectional image of deposited Ga 2 O 3 on sample S1 sapphire substrate at a 1 µm scale, at 550°C. (b) Shows SEM-cross-sectional image of deposited Ga 2 O 3 on sample S2 sapphire substrate at a 2 µm scale, at 600°C. (c) Shows SEM-cross-sectional image of deposited Ga 2 O 3 on sample S3 sapphire substrate at a 500 nm scale, at 650°C. Figure 5 (b) shows common diffraction peaks of 2 θ at 19.01°, 30.4°, 35.6° and 63.4° which correspond to (-201), (400), (111), and (-710) of sample S2 substrate at temperature 600°C and other small peaks at 30.3°, 43.6°, 53.4°, 59.7° and 71.4° which correspond to (110), (113), (112), (313) and (-710) [ 31 ]. In sample S2, planes (110), (113) at 30.3°, 43.6° 2 θ angles belong to the α phase of Ga 2 O 3, and planes (-201), (400), (111), (112), (313), (-710) at 19.01°, 30.4°, 35.6°, 53.4°, 59.7°, and 71.4° 2 θ angles belong to β phase of Ga 2 O 3 [ 31 ]. In sample S2, since most atomic planes shown in XRD belong to the β phase of Ga 2 O 3 , it can be said that the sample is β-Ga 2 O 3 . Figure 5 (c) shows common diffraction peaks of 2 θ at 18.8°, 30.3°, 35.6° and 38.5° which correspond to (-201), (400), (111), and (-311) of sample S3 substrate at temperature 600°C and other small peaks at 43.6°, 53.4°, 59.5° and 63.4° which correspond to (112), (104), (313) and (020) [ 31 ], [ 32 ]. In sample S3, plane (104) at 53.4° 2 θ angle belongs to ε phase of Ga 2 O 3, and planes (-201), (400), (111), (-311), (112), (313), (020) at 18.8°, 30.3°, 35.6°, 38.5°, 43.6°, 59.5°, and 63.4° 2 θ angles belong to β phase of Ga 2 O 3 [ 31 ], [ 32 ]. The optical analysis has been done with UV-VIS (LAMBDA 750 UV/VIS/NIR, PerkinElmer, USA). The absorbance and tauc plot have been analyzed for 3 samples using UV-VIS spectroscopy and are shown in Fig. (6) and Fig. (7). Ga 2 O 3 shows high transparency in the spectral range except where the incident radiation is absorbed across the bandgap (E g ). Three plots had been acquired with three sample substrates through the Ga 2 O 3 layer deposition process. Figure 6 (a) demonstrates the band of absorbance ranging from 300 nm to 210 nm. Figure 6 (b) demonstrates the band of absorbance ranging from 310 nm to 210nm. Figure 6 (c) demonstrates the band of absorbance ranging from 320 nm to 230nm. After analyzing three UV plots, the sample S1 substrate had a smooth curve at the band of absorbance range. Sample S2 substrate had a smoother curve at the band of absorbance range. Sample S3 substrate had a sharper curve at the band of absorbance range. Now the resulting UV plot agrees with the sample substrate S3 morphology. For the direct bandgap, the absorption follows a power law of the form [ 33 ], $$\left(\alpha hv\right)={B\left(hv-Eg\right)}^{\frac{1}{2}}$$ Here, these terms are elaborated \(hv\) as the energy of the incident photon, \(\alpha\) absorption coefficient, B is the absorption edge width parameter, and E g is the bandgap. The optical absorption coefficient ‘ \(\alpha\) ’ of the Ga 2 O 3 layer on sample substrates of different temperatures is evaluated using the relation [ 33 ], $$a= \frac{1}{t}\text{ln}\left[\frac{T}{{(1-R)}^{2}}\right]$$ Here, these terms can be elaborated as T is the transmittance, R is the reflectance, and t is the thickness of the Ga 2 O 3 layer on the sample sapphire substrate. The thickness of the Ga 2 O 3 layer on sample substrates varies from one another as they are tested with different temperatures. The layer deposition is very rocky at 550°C, and at 600°C, the layer deposition is smooth compared to sample S1, and at 650°C, the layer deposition is very smooth compared to other substrates. The UV-Vis Spectroscopy revealed that sample S1 substrate has a smooth slope cut at the absorbance band, sample S2 substrate has a smoother slope cut at the absorbance band, and sample S3 substrate has a sharper slope cut at the absorbance band. According to this analysis, the third sample plot now agrees more with the morphology of sample substrate S3. The optical analysis of the tauc plot determines the optical gap of the deposited Ga 2 O 3 layer on the sample substrate. The plot of (α \(hv\) ) 2 vs ( \(hv\) ) now yields the energy gap value, which determines the material specifications. Extrapolating the plot line to the x-axis yields this energy gap. The band of absorbance of the plot in Fig. 7 (a) at temperature 550°C is 4.5 eV and 5.5 eV. At 4.91 eV, the extrapolated line intersected the x-axis. The band of absorbance of the plot in Fig. 7 (b) at a temperature of 600°C is 4.6 eV and 5.7 eV. At 4.85 eV, the extrapolated line intersected the x-axis. The band of absorbance of the plot in Fig. 7 (c) at temperature 650°C is 4.2 eV and 5.6 eV. At 4.7 eV, the extrapolated line intersected the x-axis. The tauc plot values of the three sample substrates will agree with the UV-Spectroscopy values for the energy band gap and the band of absorbance ranges. The UV plot of sample substrate S1 shows that the absorbance band ranges from 300nm to 210nm, and the tauc plot shows that the energy band gap is 4.91 eV. The absorbance band for sample substrate S2 ranges from 310nm to 210nm, and the energy band gap for the tauc plot of sample substrate S2 is 4.85 eV. The absorbance band for sample substrate S3 ranges from 320nm to 230nm, and the energy band gap for the tauc plot of sample substrate S3 is 4.7 eV. The sample substrate S3 tauc plot agrees more with the sample substrate C UV plot than the other two sample substrates' UV plots and tauc plots. These UV plots and tauc plots agree with the morphology of sample substrate S3. The morphological analysis from Fig. 3 of three samples that have been deposited at three different temperatures, (550°C, 600°C and 650°C for S1, S2, and S3 samples correspondingly) have been shown that the S2 sample has the best morphology compared to S1 and S3 samples. At lower temperatures, α, δ, and ε phases have more chance to be in the material than the β phase. The XRD plot of sample S1 annealed at 550°C, demonstrated the α, δ, ε phases in the plot because this annealing is done at a lower temperature. But most atomic planes belong to the β phase of Ga 2 O 3 . The XRD plot of sample S2 annealed at 600°C, demonstrated the α phase at some planes because of annealing at low temperatures. But the majority of atomic planes belong to the β phase of Ga 2 O 3 . Sample S3 XRD analysis at 650°C, demonstrates the material belongs to the β phase of Ga 2 O 3 and also the material shows one plane belongs to the ε phase. This XRD analysis shows that the most stable sample is S3, which annealed at 650°C and this elemental analysis agrees with morphological analysis. In optical analysis, UV-Vis Spectroscopy has been shown in Fig. 6 and when compared to samples S1 and S2, sample S3 has a sharper curve at the band of absorbance range. Tauc plots have been shown in Fig. 7 , plots of tauc analysis and UV Vis spectroscopy agree with each other in sample S3 case, because of its absorbance band range and energy band gap (Eg ≈ 4.7–4.9 eV ). From the comparative analysis of morphological, elemental, and optical analysis, sample S3 is the most stable β phase of Ga 2 O 3 . β -Ga 2 O 3 is more stable in thermal and chemical conditions. α and δ phases are not stable compared to the β phase. So, the α and δ phase Ga 2 O 3 can be used in Gas sensor applications. Applications of β-Ga 2 O 3 are photodetectors. Iv. Gas Sensing Application The material analysis shows the best optimized thin-film sample is S2 out of all three samples, which has been further tested for gas sensing applications. Au-electrodes have been formed over the S2 sample with Sputtering using a shadow mask. The schematic of the device has been shown in Fig. 8 . Sample size is 1 cm ×1.5 cm . The area of Au electrodes is ~ 2456.8 µm 2 , the area of the device under consideration is ~ 54678.3 µm 2 , and the separation between the electrodes is ~ 18 µm . This device has been tested for Ammonia and Acetone. The electrical response has been taken by varying the gas flow, which has been shown in Fig. 9 . The shown response in Fig. 9 (a) is for Acetone at 200 sccm, 150 sccm, 100 sccm, 50 sccm of gas flow, and response in open air condition. Figure 9 (b) shows the ratio between electrical response at 200 sccm, 150 sccm, 100 sccm, and 50 sccm to response in open-air conditions. The contrast of open air to gas response (OAGR) is higher at 50 sccm to 100 sccm. After 100 sccm to further increments (150 sccm, 200 sccm), the contrast is very low and seems to decrease as it moves to a higher concentration of gas flow. Gas detection of Ga 2 O 3 thin film sensors was evaluated by exposure to Acetone and Ammonia gases. These sensors show a clear response to target gases as it has shown in Fig. 9 and Fig. 11 . The highest Dynamic response of Ga 2 O 3 thin film sensor to Acetone gas are 1.97×10 − 4 A, 0.051 A, 0.115 A, and 0.146 A at 50 sccm, 100 sccm, 150 sccm, and 200 sccm respectively (Fig. 9 (a)). We define the sensor response as S = R/R o , where R is the resistance change caused by gas exposure. R o represents the base resistance of Acetone (response in absence of gas) and the equilibrium resistance of Acetone in the detection gas (response in presence of gas) [ 34 , 35 ]. The response as a function of gas concentration is shown in Fig. 10 and Fig. 11 for both gases, the response increases with increasing gas concentration. The sensor response (S) has also been plotted and shown in Fig. 9 (b). The highest recorded response is 3.88×10 6 at 200 sccm of Acetone gas flow. The sensing accuracy of the Ga 2 O 3 thin film-based gas detector has also been plotted for varying concentrations of Acetone gas sensor. The accuracy is found to be 93% with the linear fitting of the plotted graph. The highest Dynamic response of Ga 2 O 3 thin film gas sensor to Ammonia gas is 1.53×10 − 3 A, 1.72×10 − 3 A, 2.79×10 − 3 A, and 3.11×10 − 3 A at 100 sccm, 200 sccm, 300 sccm, and 400 sccm respectively (Fig. 11 (a), at -5 V). The sensor response (S) has also been plotted and shown in Fig. 11 (b). The highest recorded response is 8.28×10 4 at 400 sccm of Ammonia gas flow (-5 V). The sensing accuracy of the Ga 2 O 3 thin film-based gas detector has also been plotted for varying concentrations of Ammonia gas. The accuracy is found to be 97% with the linear fitting of the plotted graph. V. Conclusion The Mist Chemical Vapor Deposition technique is one good technique for the deposition of Ga 2 O 3 thin film with different phases. The deposited thin film samples (S1, S2, S3) have been characterized with XRD, FESEM, and UV-Spectroscopy and the second sample (S2) has shown a smooth surface with good crystalline quality and UV absorbance band between 300 nm to 200 nm. The optimized sample S2 has also been tested for gas-sensing applications (Acetone, and Ammonia). The sample very good response for Acetone and Ammonia sensing. Declarations Acknowledgment The authors would like to thank the Center for Flexible electronics, Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Vaddeswaram, India, and the Nanoscience and Engineering Department of INJE University, South Korea. This work has been partly supported by Koneru Lakshmaiah Education Foundation, India. (Sanction Order No. KLEF/IFP/2022-23/ECE/0008). Ethical Approval This declaration is not applicable. Competing interests We all the authors declare no conflict of interest related to the author's position and corresponding author. Authors' contributions Ashish Kumar and Marem Padma Praneeth drafted the manuscript. All work has been done by Ashish Kumar. The manuscript is reviewed by AlaaDdin Al-Shidaifat, Hanjung Song, and Shubhro Chakrabartty. Funding This work has been partly supported by Koneru Lakshmaiah Education Foundation, India. (Sanction Order No. KLEF/IFP/2022-23/ECE/0008). Availability of data and materials There is no associated data or material related to the manuscript. References Chen, Shuai, et al. "Recent technological advances in fabrication and application of organic electrochemical transistors." Advanced Materials Technologies 5.12 (2020): 2000523. Soukoulis, Costas M., ed. Photonic band gap materials. Vol. 315. Springer Science & Business Media, 2012. Morkoc, B. H., et al. "Large‐bandgap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies." Journal of Applied Physics 76.3 (1994): 1363-1398. Kim, Munho, et al. "Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond." Journal of Materials Chemistry C 5.33 (2017): 8338-8354. Jain, Heena, Sapna Rajawat, and Puja Agrawal. "Comparision of wide band gap semiconductors for power electronics applications." 2008 International conference on recent advances in microwave theory and applications. IEEE, 2008. Huang, Yixian, Zhenguo Ji, and Chen Chen. "Preparation and characterization of p-type transparent conducting tin-gallium oxide films." Applied surface science 253.11 (2007): 4819-4822. Shi, Feng, and Hengyang Qiao. "Preparations, properties, and applications of gallium oxide nanomaterials–A review." Nano Select 3.2 (2022): 348-373. Stepanov, S., et al. "Gallium OXIDE: Properties and applica 498 a review." Rev. Adv. Mater. Sci 44 (2016): 63-86. Rebien, M., et al. "Optical properties of gallium oxide thin films." Applied physics letters 81.2 (2002): 250-252. Mattox, Donald M. "Physical vapor deposition (PVD) processes." Metal Finishing 100 (2002): 394-408. Creighton, J. R., and P. Ho. "Introduction to chemical vapor deposition (CVD)." Chemical vapor deposition 2 (2001): 1-22. Moshfegh, A. Z. "PVD growth method: physics and technology." Physics And Technology Of Thin Films: IWTF 2003 (2004): 28-53. Baptista, Andresa, et al. "On the physical vapor deposition (PVD): evolution of magnetron sputtering processes for industrial applications." Procedia Manufacturing 17 (2018): 746-757. Wasa, Kiyotaka, and Shigeru Hayakawa. "Handbook of sputter deposition technology." (1992). Anders, André. "High power impulse magnetron sputtering and related discharges: Scalable plasma sources for plasma-based ion implantation and deposition." Surface and Coatings Technology 204.18-19 (2010): 2864-2868. Mattox, Donald M. "Fundamentals of ion plating." Journal of Vacuum Science and Technology 10.1 (1973): 47-52. Shen, Mingli, et al. "High vacuum arc ion plating NiCrAlY coatings: microstructure and oxidation behavior." Corrosion Science 94 (2015): 294-304. Ahmed, Nadir AG. "Ion plating: optimum surface performance and material conservation." Thin solid films 241.1-2 (1994): 179-187. Singh, Rajiv K., and J. Narayan. "Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical model." Physical Review B 41.13 (1990): 8843. Singh, Rajiv K., O. W. Holland, and J. Narayan. "Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique." Journal of applied physics 68.1 (1990): 233-247. Chrisey, Douglas B., and Graham K. Hubler, eds. "Pulsed laser deposition of thin films." (1994): 3. Krebs, Hans-Ulrich, et al. "Pulsed laser deposition (PLD)--a versatile thin film technique." Advances in solid state physics (2003): 505-518. Fujioka, Hiroshi. "Pulsed laser deposition (PLD)." Handbook of Crystal Growth. North-Holland, 2015. 365-397. Greer, James A., and M. D. Tabat. "Large‐area pulsed laser deposition: Techniques and applications." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13.3 (1995): 1175-1181. Herman, Marian A., and Helmut Sitter. Molecular beam epitaxy: fundamentals and current status. Vol. 7. Springer Science & Business Media, 2012. Cho, Alfred Y. "Film deposition by molecular-beam techniques." Journal of Vacuum Science and Technology 8.5 (1971): S31-S38. Shu, Haibo, et al. "Edge structural stability and kinetics of graphene chemical vapor deposition growth." Acs Nano 6.4 (2012): 3243-3250. Viguie, J. C., and J. Spitz. "Chemical vapor deposition at low temperatures." J. electrochem. Soc 122.4 (1975): 585-588. Dang, Giang T., et al. "Mist-CVD Grown Sn-Doped $\alpha $-Ga 2 O 3 MESFETs." IEEE Transactions on Electron Devices 62.11 (2015): 3640-3644. Muazzam, Usman Ul, et al. "Optical properties of mist CVD grown α-Ga 2 O 3." IEEE Photonics Technology Letters 32.7 (2020): 422-425. Quan, Yu, et al. "Synthesis and characterization of gallium oxide nanowires via a hydrothermal method." Materials Chemistry and Physics 121.1-2 (2010): 142-146. Sharma, Aditya, et al. "Nano-structured phases of gallium oxide (GaOOH, α-Ga 2 O 3, β-Ga 2 O 3, γ-Ga 2 O 3, δ-Ga 2 O 3, and ε-Ga 2 O 3): Fabrication, structural, and electronic structure investigations." International Nano Letters 10 (2020): 71-79. Kumar, Ashish, et al. "Ga-In nanoparticle induced UV plasmonic impact on heterojunction based deep UV photodetector." IEEE Transactions on Nanotechnology 21 (2022): 196-203. Nakagomi, S., Sai, T., & Kokubun, Y. (2013). Hydrogen gas sensor with self temperature compensation based on β-Ga2O3 thin film. Sensors and Actuators B: Chemical , 187 , 413-419. Liu, Z., Yamazaki, T., Shen, Y., Kikuta, T., Nakatani, N., & Li, Y. (2008). O2 and CO sensing of Ga2O3 multiple nanowire gas sensors. Sensors and Actuators B: Chemical , 129 (2), 666-670. Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-2704726","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":185262051,"identity":"944d8be8-da19-4781-8b88-964091692836","order_by":0,"name":"Ashish Kumar","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABEElEQVRIiWNgGAWjYBACCQbGBmYom40hgeGAHIh14AEpWozBWhLwamFgQGgBKk5sADHxaZGcdrj5c+EeOwbd9uPPHjz4cyd9ftjhh0Bb7OR0G7BrkZZObJOe8SyZwexMjrlBYtuz3I230wyAWpKNzQ5g1yIH1MLMc4CZwexADptEYsPh3I2zE0BaDiRuw62l+TPPgXoGs/PPn0kk/Dmcbjg7/QNeLUCHNUjzHDjMYHYjwUwige1wgrx0Dn5bJGcD/cJz4DiP2Y03ZhKJbYcNN0jnFBxIMMDtF4nb6Y+BDquWMzuf/kzyx5/D8vKz0zd/+FBhJ4dLCwzwwFkGYJUG+JWjAvkGUlSPglEwCkbBSAAAJQxli9O14SEAAAAASUVORK5CYII=","orcid":"","institution":"Koneru Lakshmaiah Education Foundation","correspondingAuthor":true,"submittingAuthor":false,"prefix":"","firstName":"Ashish","middleName":"","lastName":"Kumar","suffix":""},{"id":185262052,"identity":"1d5b8fd1-f1b3-4e37-b026-ea7f88d6be6d","order_by":1,"name":"Marem Padma Praneeth","email":"","orcid":"","institution":"Koneru Lakshmaiah Education Foundation","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Marem","middleName":"Padma","lastName":"Praneeth","suffix":""},{"id":185262053,"identity":"93f0fe72-c782-49a5-8d2d-e91ce4ac7fec","order_by":2,"name":"AlaaDdin Al-Shidaifat","email":"","orcid":"","institution":"Inje University","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"AlaaDdin","middleName":"","lastName":"Al-Shidaifat","suffix":""},{"id":185262054,"identity":"5a2311a0-adf6-44fa-a181-0ece8b57f807","order_by":3,"name":"Hanjung Song","email":"","orcid":"","institution":"Inje University","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Hanjung","middleName":"","lastName":"Song","suffix":""},{"id":185262055,"identity":"535ea1d3-f2a3-4ecc-9b74-7b9fc21a24f4","order_by":4,"name":"Shubhro Shubhro Chakrabartty","email":"","orcid":"","institution":"Koneru Lakshmaiah Education Foundation","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Shubhro","middleName":"Shubhro","lastName":"Chakrabartty","suffix":""}],"badges":[],"createdAt":"2023-03-17 12:14:24","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-2704726/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-2704726/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":34727312,"identity":"dd4cfe88-2a0f-4229-a2c4-1d9b323f70bc","added_by":"auto","created_at":"2023-03-23 18:06:30","extension":"png","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":25836,"visible":true,"origin":"","legend":"\u003cp\u003eSimple schematic of cleaning of sample substrate in ethanol solution using sonicator machine.\u003c/p\u003e","description":"","filename":"1.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/87310e025c5ec80afaabb5d3.png"},{"id":34727893,"identity":"ec825e16-2ee0-4cfe-af3a-4f2fa6f68ab2","added_by":"auto","created_at":"2023-03-23 18:14:30","extension":"png","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":84606,"visible":true,"origin":"","legend":"\u003cp\u003eSimple schematic of MIST CVD for deposition of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3 \u003c/sub\u003eon the sapphire substrate.\u003c/p\u003e","description":"","filename":"2.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/9bb58f0e163c59a3c57588b0.png"},{"id":34727320,"identity":"f9cc1570-9b4a-4f97-9fdf-d6103369e53a","added_by":"auto","created_at":"2023-03-23 18:06:30","extension":"png","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":152021,"visible":true,"origin":"","legend":"\u003cp\u003e(a) Shows FESEM images of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S1 sapphire substrate at a 5 µm scale, at 550°C. (b) Shows FESEM images of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S2 sapphire substrate at a 5 µm scale, at 600°C. (c) Shows FESEM images of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S3 sapphire substrate at a 5 µm scale, at 650°C.\u003c/p\u003e","description":"","filename":"3.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/e722bf8742b7e8dc1f775863.png"},{"id":34727314,"identity":"6fd9cdfc-6e81-49c0-a990-24eb68ac2db9","added_by":"auto","created_at":"2023-03-23 18:06:30","extension":"png","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":122923,"visible":true,"origin":"","legend":"\u003cp\u003e(a) Shows SEM-cross-sectional image of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S1 sapphire substrate at a 1 µm scale, at 550°C. (b) Shows SEM-cross-sectional image of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S2 sapphire substrate at a 2 µm scale, at 600°C. (c) Shows SEM-cross-sectional image of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S3 sapphire substrate at a 500 nm scale, at 650°C.\u003c/p\u003e","description":"","filename":"4.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/add508386614c5d7f9e45651.png"},{"id":34727316,"identity":"f1c6f8c4-4633-436d-99ce-0e114c54d803","added_by":"auto","created_at":"2023-03-23 18:06:30","extension":"png","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":85167,"visible":true,"origin":"","legend":"\u003cp\u003e(a) XRD analysis of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on a sapphire substrate at 550°C (b) XRD analysis of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on a sapphire substrate at 600°C (c) XRD analysis of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on a sapphire substrate at 650°C.\u003c/p\u003e","description":"","filename":"5.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/633b5e4d7822ac4846a1a8bc.png"},{"id":34727895,"identity":"2b8b95cd-5e14-464b-9a03-ef04fccb177e","added_by":"auto","created_at":"2023-03-23 18:14:30","extension":"png","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":116432,"visible":true,"origin":"","legend":"\u003cp\u003e(a) Sample S1 substrate at 550°C shows a band of absorbance ranging from 300nm to 200nm. (b) Sample S2 substrate at 600°C shows a band of absorbance ranging from 310nm to 210nm. (c) Sample S3 substrate at 650°C shows a band of absorbance ranging from 320nm to 200nm.\u003c/p\u003e","description":"","filename":"6.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/43ed326813d8178e9e80d878.png"},{"id":34727894,"identity":"f2996a70-634c-4db4-bfbe-a008989eb358","added_by":"auto","created_at":"2023-03-23 18:14:30","extension":"png","order_by":7,"title":"Figure 7","display":"","copyAsset":false,"role":"figure","size":95351,"visible":true,"origin":"","legend":"\u003cp\u003e(a) Shows sample S1 substrate at 550°C has E\u003csub\u003eg\u003c/sub\u003e at 4.91 eV by extrapolating the slope toward the energy axis. (b) Shows sample S2 substrate at 600°C has E\u003csub\u003eg\u003c/sub\u003e at 4.85 eV by extrapolating the slope toward the energy axis. (c) Shows sample S3 substrate at 650°C has E\u003csub\u003eg\u003c/sub\u003e at 4.7 eV by extrapolating the slope toward the energy axis.\u003c/p\u003e","description":"","filename":"7.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/e3f35db143fd31312a7d420b.png"},{"id":34727319,"identity":"c2b0e81a-449a-41c3-929e-4fef48eef682","added_by":"auto","created_at":"2023-03-23 18:06:30","extension":"png","order_by":8,"title":"Figure 8","display":"","copyAsset":false,"role":"figure","size":84693,"visible":true,"origin":"","legend":"\u003cp\u003eSchematic of the device for gas sensing application. The actual device figure has been shown in the inset of Fig. 8.\u003c/p\u003e","description":"","filename":"8.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/fab91997592e6bbf36800d20.png"},{"id":34727897,"identity":"82938dde-b7f5-434c-bb57-740fc055ef6d","added_by":"auto","created_at":"2023-03-23 18:14:30","extension":"png","order_by":9,"title":"Figure 9","display":"","copyAsset":false,"role":"figure","size":97769,"visible":true,"origin":"","legend":"\u003cp\u003eElectrical response of the device with varying concentrations of Acetone gas.\u003c/p\u003e","description":"","filename":"9.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/650e69fc6745789768c8944a.png"},{"id":34727322,"identity":"919767c9-3094-4be4-817a-fe871a3ea125","added_by":"auto","created_at":"2023-03-23 18:06:30","extension":"png","order_by":10,"title":"Figure 10","display":"","copyAsset":false,"role":"figure","size":302719,"visible":true,"origin":"","legend":"\u003cp\u003eAccuracy analysis of Gas Sensor Based on S2 sample.\u003c/p\u003e","description":"","filename":"10.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/04b6cadf96fa592e6d9d417e.png"},{"id":34727317,"identity":"50978cac-a779-49fa-b096-23d291015ce2","added_by":"auto","created_at":"2023-03-23 18:06:30","extension":"png","order_by":11,"title":"Figure 11","display":"","copyAsset":false,"role":"figure","size":57934,"visible":true,"origin":"","legend":"\u003cp\u003eElectrical analysis of Ammonia gas sensor with S2 sample. (b) Accuracy of ammonia sensor for device formed on S2 sample.\u003c/p\u003e","description":"","filename":"11.png","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/3d9ecd7d9fe84ceb2bc9d151.png"},{"id":35829760,"identity":"d434327a-5f46-48b2-a8cf-7346c6c99895","added_by":"auto","created_at":"2023-04-16 14:14:39","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1317355,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-2704726/v1/833fc974-ef7e-44e3-9e2d-22a0c54fef0b.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications","fulltext":[{"header":"I. Introduction","content":"\u003cp\u003eAs technology advances, we are in need to reduce the size of transistors (smaller transistors switch faster because they draw less current and have less capacitance, which means less charge must be moved to switch the terminals on and off, which can save power) [\u003cspan citationid=\"CR1\" class=\"CitationRef\"\u003e1\u003c/span\u003e]. To reduce the size of the transistor, we must focus on the larger band gap. The band gap is the amount of energy required to jolt an electron into a conducting state. Systems made of high-bandgap materials can be thinner, lighter, and handle more power than systems made of lower-bandgap materials [\u003cspan citationid=\"CR2\" class=\"CitationRef\"\u003e2\u003c/span\u003e]. A high bandgap also allows these systems to operate at higher temperatures, reducing the need for bulky cooling systems. As a result, we must select an element that is both a semiconductor and has a larger band gap than silicon (Si) [\u003cspan citationid=\"CR3\" class=\"CitationRef\"\u003e3\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eBecause SiC and GaN have a wide band gap, they are suitable for our device fabrication. However, it made our device more expensive [\u003cspan citationid=\"CR4\" class=\"CitationRef\"\u003e4\u003c/span\u003e]. Our goal is to find the most cost-effective and efficient solution. The bandgap of gallium oxide (about 4.9 \u003cem\u003eeV\u003c/em\u003e) is greater than that of silicon carbide (about 3.4 eV), gallium nitride (about 3.3 \u003cem\u003eeV\u003c/em\u003e), and silicon (1.1 \u003cem\u003eeV\u003c/em\u003e) [\u003cspan citationid=\"CR5\" class=\"CitationRef\"\u003e5\u003c/span\u003e]. This semiconductor material is also a Transparent Conductive Oxide (TCO), which gives gallium oxide an advantage over other materials in solar cell applications, such as silicon [\u003cspan citationid=\"CR6\" class=\"CitationRef\"\u003e6\u003c/span\u003e]. Gallium is a naturally occurring unstable and rare element. Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e is soluble in most acids and alkalis, but it is insoluble and stable in water [\u003cspan citationid=\"CR7\" class=\"CitationRef\"\u003e7\u003c/span\u003e]. Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e has five different polymorphs (α, β, γ, δ, ε), and the most stable of these structures is \u003cem\u003eβ\u003c/em\u003e-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e [\u003cspan citationid=\"CR8\" class=\"CitationRef\"\u003e8\u003c/span\u003e]. Gallium oxide nanomaterials have exceptional optical properties, and their photoelectric conversion is widely used in fields such as UV detection and optoelectronic devices [\u003cspan citationid=\"CR9\" class=\"CitationRef\"\u003e9\u003c/span\u003e]. Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e is chemically and thermally stable in comparison with most semiconductors [\u003cspan citationid=\"CR5\" class=\"CitationRef\"\u003e5\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eThere are primarily two deposition techniques for thin film layer deposition, PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition) [\u003cspan citationid=\"CR10\" class=\"CitationRef\"\u003e10\u003c/span\u003e], [\u003cspan citationid=\"CR11\" class=\"CitationRef\"\u003e11\u003c/span\u003e]. It was classified into several types, including PLD, MBE, MIST-CVD, etc [\u003cspan citationid=\"CR12\" class=\"CitationRef\"\u003e12\u003c/span\u003e]. The material deposited is physically moved onto the substrate during physical deposition processes. The material on the substrate is formed by no chemical reaction. Thin film deposition with physical vapor deposition is rapidly expanding, it has many applications in optoelectronics among others. In the PVD process, materials grow from a condensed phase to a vapor phase and then back to a thin film condensed phase. It was classified into many types like Sputtering, evaporation, etc [\u003cspan citationid=\"CR13\" class=\"CitationRef\"\u003e13\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eThin films can be deposited on substrates using a sputtering deposition. It is the process of ejecting atoms by bombarding a solid or liquid target with energetic particles, most commonly ions [\u003cspan citationid=\"CR14\" class=\"CitationRef\"\u003e14\u003c/span\u003e]. It is less expensive than other PVDs. However, the issue is limited scalability [\u003cspan citationid=\"CR15\" class=\"CitationRef\"\u003e15\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eIon plating is a type of PVD that involves bombarding the substrate with atomic-sized energetic particles and depositing atoms of film material [\u003cspan citationid=\"CR16\" class=\"CitationRef\"\u003e16\u003c/span\u003e]. It has low deposition temperatures, a large deposition area, and rapid growth rates [\u003cspan citationid=\"CR17\" class=\"CitationRef\"\u003e17\u003c/span\u003e]. However, the issue here was low productivity and high cost [\u003cspan citationid=\"CR18\" class=\"CitationRef\"\u003e18\u003c/span\u003e]. However, this process is not suitable for us.\u003c/p\u003e \u003cp\u003eThe laser pulse vaporizes the desired material, and an evaporation source (which can be a thermally heated crucible, electron beam, laser beam, etc.) is used. This process is called Pulsed Laser Evaporation (PLE) [\u003cspan citationid=\"CR19\" class=\"CitationRef\"\u003e19\u003c/span\u003e, \u003cspan citationid=\"CR20\" class=\"CitationRef\"\u003e20\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eA focused pulsed laser beam is used in Pulsed Laser Deposition (PLD) to deposit thin films on a substrate [\u003cspan citationid=\"CR21\" class=\"CitationRef\"\u003e21\u003c/span\u003e]. Smith and Turner discovered it in 1965 for the preparation of semiconductors [\u003cspan citationid=\"CR22\" class=\"CitationRef\"\u003e22\u003c/span\u003e]. This deposition technique has been used for a variety of oxides, nitrides, carbides, and other materials [\u003cspan citationid=\"CR23\" class=\"CitationRef\"\u003e23\u003c/span\u003e]. A pulsed and focused laser beam strikes elementary or alloy targets at a 45\u0026deg; angle in an ultrahigh vacuum (UHV) chamber. The atoms and ions that have been ablated from the target(s) are deposited on substrates [\u003cspan citationid=\"CR24\" class=\"CitationRef\"\u003e24\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eMolecular Beam Epitaxy (MBE) is a thin-film deposition technology that uses atomic or molecular beams generated in Knudsen cells contained in an ultra-high vacuum chamber to deposit a thin single-crystal layer on a single-crystal substrate [\u003cspan citationid=\"CR25\" class=\"CitationRef\"\u003e25\u003c/span\u003e]. There are several ways to generate source beams, including i. melting and evaporation of solids or liquids contained in crucibles, ii. solid sublimation from a crucible, iii. ion beam bombardment, and iv. cracking various chemical species, etc. [\u003cspan citationid=\"CR26\" class=\"CitationRef\"\u003e26\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eChemical vapor deposition (CVD) is a popular method of material processing. Most of its applications involve the application of stable thin-film coatings to surfaces, but it is also used to supply high-purity bulk materials and powders, as well as the fabrication of composite materials via infiltration strategies. It has a high deposition growth, purity, and stability [\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e]. It has deposited at high temperatures [\u003cspan citationid=\"CR28\" class=\"CitationRef\"\u003e28\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eMIST Chemical Vapor Deposition (MIST-CVD) is a relatively new fabrication technology used to grow oxide semiconductors. MIST CVD is a deposition method that is typically used under a vacuum to produce high-quality, high-performance solid materials [\u003cspan citationid=\"CR29\" class=\"CitationRef\"\u003e29\u003c/span\u003e]. MIST CVD is the process of producing non-volatile solid thin films on substrates through chemical reactions between organometallic or halide compounds to be deposited and other gases [\u003cspan citationid=\"CR30\" class=\"CitationRef\"\u003e30\u003c/span\u003e]. It is a CVD technique with MIST added to the Chemical Vapor Deposition process apparatus. This process of deposition is smoother than CVD. Now we must choose the best and most cost-effective technique for the deposition of the thin firm. MIST CVD outperforms other techniques in terms of efficiency and cost-effectiveness. MIST CVD for Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer deposition is being used for this purpose.\u003c/p\u003e"},{"header":"Ii. Experimental Details","content":"\u003cp\u003eA. \u003cem\u003eSample Preparation\u003c/em\u003e\u003c/p\u003e \u003cp\u003eSample preparation starts with sonication of a\u0026thinsp;~\u0026thinsp;1.5 \u003cem\u003ecm\u003c/em\u003e\u003csup\u003e\u003cem\u003e2\u003c/em\u003e\u003c/sup\u003e sapphire substrate in 5 mL of ethanol for 15 \u003cem\u003emin\u003c/em\u003e and then is dried by nitrogen gas purging with an air jet. Now, this sample is placed inside the CVD tube for further experimental process.\u003c/p\u003e \u003cp\u003eB. \u003cem\u003eCVD System\u003c/em\u003e\u003c/p\u003e \u003cp\u003eThe Chemical Vapor Deposition machine was cleaned and pumped using a roughing pump to achieve a pressure of about 6 x 10\u003csup\u003e\u0026minus;\u0026thinsp;2\u003c/sup\u003e \u003cem\u003emillibars\u003c/em\u003e. To remove certain contamination like moisture, and air from inside the tube, argon gas was purged for 30 \u003cem\u003emin\u003c/em\u003e. The temperature was raised to 500\u0026deg;C with a ramp rate of 20\u0026deg;C per minute.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eC. \u003cem\u003eMIST Setup Preparation\u003c/em\u003e\u003c/p\u003e \u003cp\u003eTHE MIST CVD process consists of 2 stages.\u003c/p\u003e \u003cp\u003e\u0026bull; Preparation of MIST\u003c/p\u003e \u003cp\u003e\u0026bull; Transporting MIST through the carrier gas\u003c/p\u003e \u003cp\u003e3/4th volume was filled with water in MIST Setup, and 100 mg of Gallium was placed inside this MIST setup. The MIST setup was sealed to prevent any leakage of mist outside of the mist setup. MIST started to form in the mist setup. The MIST setup was placed on top of a hot plate with a temperature fixed at 100\u0026deg;C. After 10 minutes, nitrogen gas (flowrate 60 sccm) coming out of the MIST setup carrying the mist, was mixed with oxygen gas (flowrate 20 sccm) before flowing inside the CVD tube.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eD. \u003cem\u003eCVD Chamber\u003c/em\u003e\u003c/p\u003e \u003cp\u003eIn the CVD system, the chamber is the part where the sample substrate was placed for layer deposition. Here MIST flow rate was kept at 60 sccm and the oxygen flow rate was kept at 20 sccm. Vapor pressure was adjusted in the chamber for MIST to settle down on the sample S1 substrate. The deposition time was 1 hour, and the gas pressure is set to 1 millibar. After deposition, sample S1 was cooled down under argon involvement. The exhaust pump sucks out unnecessary air out of the chamber. All these parameters were repeated for 3 samples except temperature. For sample S1 preparation temperature was fixed at 550\u0026deg;C. For Sample S2 preparation, the same parameters were repeated except the temperature has been raised from 550\u0026deg;C to 600\u0026deg;C. For Sample S3 preparation, the same parameters were repeated except the temperature has been raised from 600\u0026deg;C to 650\u0026deg;C. After deposition, all the samples have been characterized for morphological analysis, elemental analysis, and optical analysis.\u003c/p\u003e"},{"header":"Iii. Material Analysis","content":"\u003cp\u003eScanning Electron Microscope gave a morphological analysis on 3 sample substrates that had been used for Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e deposition. Figure \u003cspan class=\"InternalRef\"\u003e3\u003c/span\u003e demonstrates the morphology of the Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer after annealing at a 5 \u0026micro;m scale with 3 samples, obtained using FESEM. Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer deposition is done for 3 samples at 550\u0026deg;C, 600\u0026deg;C, and 650\u0026deg;C temperatures respectively. According to the results from FESEM, Fig. \u003cspan class=\"InternalRef\"\u003e3\u003c/span\u003e(b) has a smooth-morphology compared to other samples. The thickness of the 3 samples has been estimated using cross-sectional imaging using FESEM. Figure 4 demonstrates the cross-sectional view of the Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer after annealing with 3 samples at 550\u0026deg;C,600\u0026deg;C, and 650\u0026deg;C temperatures, obtained using SEM. A smooth and efficient cross-sectional image in 3 samples is discovered in sample S2.\u003c/p\u003e\n\u003cp\u003eFigure\u0026nbsp;(5) demonstrates XRD plots of sample S1, S2, and S3 substrates. These plots depict common diffraction peaks of 2\u003cem\u003e\u0026theta;\u003c/em\u003e at various angles for different phases of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e. Figure \u003cspan class=\"InternalRef\"\u003e5\u003c/span\u003e(a) shows common diffraction peaks of 2\u003cem\u003e\u0026theta;\u003c/em\u003e at 18.93\u0026deg;, 35.6\u0026deg;, 38.56\u0026deg; and 63.33\u0026deg; which correspond to (-201), (111), (-311), and (-710) of sample S1 substrate at temperature 550\u0026deg;C and other small peaks at 30.3\u0026deg;, 43.6\u0026deg;, 53.4\u0026deg;, 59.7\u0026deg; and 71.4\u0026deg; which correspond to (400), (113), (104), (313) and (444) [\u003cspan class=\"CitationRef\"\u003e31\u003c/span\u003e], [\u003cspan class=\"CitationRef\"\u003e32\u003c/span\u003e]. In sample S1, plane (113) at 43.6\u0026deg; 2\u003cem\u003e\u0026theta;\u003c/em\u003e angle belongs to the \u0026alpha; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e, plane (104) at 53.4\u0026deg; 2\u003cem\u003e\u0026theta;\u003c/em\u003e angle belongs to \u0026epsilon; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3,\u003c/sub\u003e plane (444) at 71.4\u0026deg; 2\u003cem\u003e\u0026theta;\u003c/em\u003e angle belongs to \u0026delta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e and planes (-201), (400), (111), (-311), (313), (-710) at 18.93\u0026deg;, 30.3\u0026deg;, 35.6\u0026deg;, 38.56\u0026deg;, 59.7\u0026deg;, and 63.33\u0026deg; 2\u003cem\u003e\u0026theta;\u003c/em\u003e angles belongs to \u0026beta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e [\u003cspan class=\"CitationRef\"\u003e31\u003c/span\u003e], [\u003cspan class=\"CitationRef\"\u003e32\u003c/span\u003e]. In sample S1, since most atomic planes shown in XRD belong to the \u0026beta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e, it can be said that the sample is \u0026beta;-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e.\u003c/p\u003e\n\u003cp\u003eFigure\u0026nbsp;4. (a) Shows SEM-cross-sectional image of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S1 sapphire substrate at a 1 \u0026micro;m scale, at 550\u0026deg;C. (b) Shows SEM-cross-sectional image of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S2 sapphire substrate at a 2 \u0026micro;m scale, at 600\u0026deg;C. (c) Shows SEM-cross-sectional image of deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e on sample S3 sapphire substrate at a 500 nm scale, at 650\u0026deg;C.\u003c/p\u003e\n\u003cp\u003eFigure \u003cspan class=\"InternalRef\"\u003e5\u003c/span\u003e(b) shows common diffraction peaks of 2\u003cem\u003e\u0026theta;\u003c/em\u003e at 19.01\u0026deg;, 30.4\u0026deg;, 35.6\u0026deg; and 63.4\u0026deg; which correspond to (-201), (400), (111), and (-710) of sample S2 substrate at temperature 600\u0026deg;C and other small peaks at 30.3\u0026deg;, 43.6\u0026deg;, 53.4\u0026deg;, 59.7\u0026deg; and 71.4\u0026deg; which correspond to (110), (113), (112), (313) and (-710) [\u003cspan class=\"CitationRef\"\u003e31\u003c/span\u003e]. In sample S2, planes (110), (113) at 30.3\u0026deg;, 43.6\u0026deg; 2\u003cem\u003e\u0026theta;\u003c/em\u003e angles belong to the \u0026alpha; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3,\u003c/sub\u003e and planes (-201), (400), (111), (112), (313), (-710) at 19.01\u0026deg;, 30.4\u0026deg;, 35.6\u0026deg;, 53.4\u0026deg;, 59.7\u0026deg;, and 71.4\u0026deg; 2\u003cem\u003e\u0026theta;\u003c/em\u003e angles belong to \u0026beta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e [\u003cspan class=\"CitationRef\"\u003e31\u003c/span\u003e]. In sample S2, since most atomic planes shown in XRD belong to the \u0026beta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e, it can be said that the sample is \u0026beta;-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e.\u003c/p\u003e\n\u003cp\u003eFigure \u003cspan class=\"InternalRef\"\u003e5\u003c/span\u003e(c) shows common diffraction peaks of 2\u003cem\u003e\u0026theta;\u003c/em\u003e at 18.8\u0026deg;, 30.3\u0026deg;, 35.6\u0026deg; and 38.5\u0026deg; which correspond to (-201), (400), (111), and (-311) of sample S3 substrate at temperature 600\u0026deg;C and other small peaks at 43.6\u0026deg;, 53.4\u0026deg;, 59.5\u0026deg; and 63.4\u0026deg; which correspond to (112), (104), (313) and (020) [\u003cspan class=\"CitationRef\"\u003e31\u003c/span\u003e], [\u003cspan class=\"CitationRef\"\u003e32\u003c/span\u003e]. In sample S3, plane (104) at 53.4\u0026deg; 2\u003cem\u003e\u0026theta;\u003c/em\u003e angle belongs to \u0026epsilon; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3,\u003c/sub\u003e and planes (-201), (400), (111), (-311), (112), (313), (020) at 18.8\u0026deg;, 30.3\u0026deg;, 35.6\u0026deg;, 38.5\u0026deg;, 43.6\u0026deg;, 59.5\u0026deg;, and 63.4\u0026deg; 2\u003cem\u003e\u0026theta;\u003c/em\u003e angles belong to \u0026beta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e [\u003cspan class=\"CitationRef\"\u003e31\u003c/span\u003e], [\u003cspan class=\"CitationRef\"\u003e32\u003c/span\u003e].\u003c/p\u003e\n\u003cp\u003eThe optical analysis has been done with UV-VIS (LAMBDA 750 UV/VIS/NIR, PerkinElmer, USA). The absorbance and tauc plot have been analyzed for 3 samples using UV-VIS spectroscopy and are shown in Fig.\u0026nbsp;(6) and Fig.\u0026nbsp;(7).\u003c/p\u003e\n\u003cp\u003eGa\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e shows high transparency in the spectral range except where the incident radiation is absorbed across the bandgap (E\u003csub\u003eg\u003c/sub\u003e). Three plots had been acquired with three sample substrates through the Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer deposition process. Figure \u003cspan class=\"InternalRef\"\u003e6\u003c/span\u003e(a) demonstrates the band of absorbance ranging from 300 nm to 210 nm. Figure \u003cspan class=\"InternalRef\"\u003e6\u003c/span\u003e(b) demonstrates the band of absorbance ranging from 310 nm to 210nm. Figure \u003cspan class=\"InternalRef\"\u003e6\u003c/span\u003e(c) demonstrates the band of absorbance ranging from 320 nm to 230nm. After analyzing three UV plots, the sample S1 substrate had a smooth curve at the band of absorbance range. Sample S2 substrate had a smoother curve at the band of absorbance range. Sample S3 substrate had a sharper curve at the band of absorbance range. Now the resulting UV plot agrees with the sample substrate S3 morphology. For the direct bandgap, the absorption follows a power law of the form [\u003cspan class=\"CitationRef\"\u003e33\u003c/span\u003e],\u003c/p\u003e\n\u003cdiv class=\"Equation\" id=\"Equa\"\u003e\n \u003cdiv class=\"mathdisplay\" id=\"FileID_Equa\" name=\"EquationSource\"\u003e$$\\left(\\alpha hv\\right)={B\\left(hv-Eg\\right)}^{\\frac{1}{2}}$$\u003c/div\u003e\n\u003c/div\u003e\n\u003cp\u003eHere, these terms are elaborated \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(hv\\)\u003c/span\u003e\u003c/span\u003e as the energy of the incident photon, \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\alpha\\)\u003c/span\u003e\u003c/span\u003e absorption coefficient, B is the absorption edge width parameter, and E\u003csub\u003eg\u003c/sub\u003e is the bandgap. The optical absorption coefficient \u0026lsquo;\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\alpha\\)\u003c/span\u003e\u003c/span\u003e\u0026rsquo; of the Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer on sample substrates of different temperatures is evaluated using the relation [\u003cspan class=\"CitationRef\"\u003e33\u003c/span\u003e],\u003c/p\u003e\n\u003cdiv class=\"Equation\" id=\"Equb\"\u003e\n \u003cdiv class=\"mathdisplay\" id=\"FileID_Equb\" name=\"EquationSource\"\u003e$$a= \\frac{1}{t}\\text{ln}\\left[\\frac{T}{{(1-R)}^{2}}\\right]$$\u003c/div\u003e\n\u003c/div\u003e\n\u003cp\u003e\u003cbr\u003e\u003c/p\u003e\n\u003cp\u003eHere, these terms can be elaborated as T is the transmittance, R is the reflectance, and t is the thickness of the Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer on the sample sapphire substrate. The thickness of the Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer on sample substrates varies from one another as they are tested with different temperatures. The layer deposition is very rocky at 550\u0026deg;C, and at 600\u0026deg;C, the layer deposition is smooth compared to sample S1, and at 650\u0026deg;C, the layer deposition is very smooth compared to other substrates.\u003c/p\u003e\n\u003cp\u003eThe UV-Vis Spectroscopy revealed that sample S1 substrate has a smooth slope cut at the absorbance band, sample S2 substrate has a smoother slope cut at the absorbance band, and sample S3 substrate has a sharper slope cut at the absorbance band. According to this analysis, the third sample plot now agrees more with the morphology of sample substrate S3.\u003c/p\u003e\n\u003cp\u003eThe optical analysis of the tauc plot determines the optical gap of the deposited Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e layer on the sample substrate. The plot of (\u0026alpha;\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(hv\\)\u003c/span\u003e\u003c/span\u003e)\u003csup\u003e2\u003c/sup\u003e vs (\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(hv\\)\u003c/span\u003e\u003c/span\u003e) now yields the energy gap value, which determines the material specifications. Extrapolating the plot line to the x-axis yields this energy gap. The band of absorbance of the plot in Fig.\u0026nbsp;\u003cspan class=\"InternalRef\"\u003e7\u003c/span\u003e(a) at temperature 550\u0026deg;C is 4.5 eV and 5.5 eV. At 4.91 eV, the extrapolated line intersected the x-axis. The band of absorbance of the plot in Fig.\u0026nbsp;\u003cspan class=\"InternalRef\"\u003e7\u003c/span\u003e(b) at a temperature of 600\u0026deg;C is 4.6 eV and 5.7 eV. At 4.85 eV, the extrapolated line intersected the x-axis. The band of absorbance of the plot in Fig.\u0026nbsp;\u003cspan class=\"InternalRef\"\u003e7\u003c/span\u003e(c) at temperature 650\u0026deg;C is 4.2 eV and 5.6 eV. At 4.7 eV, the extrapolated line intersected the x-axis.\u003c/p\u003e\n\u003cp\u003e\u003cbr\u003e\u003c/p\u003e\n\u003cp\u003eThe tauc plot values of the three sample substrates will agree with the UV-Spectroscopy values for the energy band gap and the band of absorbance ranges. The UV plot of sample substrate S1 shows that the absorbance band ranges from 300nm to 210nm, and the tauc plot shows that the energy band gap is 4.91 eV. The absorbance band for sample substrate S2 ranges from 310nm to 210nm, and the energy band gap for the tauc plot of sample substrate S2 is 4.85 eV. The absorbance band for sample substrate S3 ranges from 320nm to 230nm, and the energy band gap for the tauc plot of sample substrate S3 is 4.7 eV. The sample substrate S3 tauc plot agrees more with the sample substrate C UV plot than the other two sample substrates\u0026apos; UV plots and tauc plots. These UV plots and tauc plots agree with the morphology of sample substrate S3.\u003c/p\u003e\n\u003cp\u003eThe morphological analysis from Fig.\u0026nbsp;\u003cspan class=\"InternalRef\"\u003e3\u003c/span\u003e of three samples that have been deposited at three different temperatures, (550\u0026deg;C, 600\u0026deg;C and 650\u0026deg;C for S1, S2, and S3 samples correspondingly) have been shown that the S2 sample has the best morphology compared to S1 and S3 samples. At lower temperatures, \u0026alpha;, \u0026delta;, and \u0026epsilon; phases have more chance to be in the material than the \u0026beta; phase. The XRD plot of sample S1 annealed at 550\u0026deg;C, demonstrated the \u0026alpha;, \u0026delta;, \u0026epsilon; phases in the plot because this annealing is done at a lower temperature. But most atomic planes belong to the \u0026beta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e. The XRD plot of sample S2 annealed at 600\u0026deg;C, demonstrated the \u0026alpha; phase at some planes because of annealing at low temperatures. But the majority of atomic planes belong to the \u0026beta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e. Sample S3 XRD analysis at 650\u0026deg;C, demonstrates the material belongs to the \u0026beta; phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e and also the material shows one plane belongs to the \u0026epsilon; phase. This XRD analysis shows that the most stable sample is S3, which annealed at 650\u0026deg;C and this elemental analysis agrees with morphological analysis. In optical analysis, UV-Vis Spectroscopy has been shown in Fig.\u0026nbsp;\u003cspan class=\"InternalRef\"\u003e6\u003c/span\u003e and when compared to samples S1 and S2, sample S3 has a sharper curve at the band of absorbance range. Tauc plots have been shown in Fig.\u0026nbsp;\u003cspan class=\"InternalRef\"\u003e7\u003c/span\u003e, plots of tauc analysis and UV Vis spectroscopy agree with each other in sample S3 case, because of its absorbance band range and energy band gap (Eg\u0026thinsp;\u0026asymp;\u0026thinsp;4.7\u0026ndash;4.9 \u003cem\u003eeV\u003c/em\u003e). From the comparative analysis of morphological, elemental, and optical analysis, sample S3 is the most stable \u003cem\u003e\u0026beta;\u003c/em\u003e phase of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e. \u003cem\u003e\u0026beta;\u003c/em\u003e-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e is more stable in thermal and chemical conditions. \u0026alpha; and \u0026delta; phases are not stable compared to the \u0026beta; phase. So, the \u0026alpha; and \u0026delta; phase Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e can be used in Gas sensor applications. Applications of \u0026beta;-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e are photodetectors.\u003c/p\u003e"},{"header":"Iv. Gas Sensing Application","content":"\u003cp\u003eThe material analysis shows the best optimized thin-film sample is S2 out of all three samples, which has been further tested for gas sensing applications. Au-electrodes have been formed over the S2 sample with Sputtering using a shadow mask. The schematic of the device has been shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig7\" class=\"InternalRef\"\u003e8\u003c/span\u003e. Sample size is 1 \u003cem\u003ecm\u003c/em\u003e\u0026times;1.5 \u003cem\u003ecm\u003c/em\u003e. The area of Au electrodes is ~\u0026thinsp;2456.8 \u003cem\u003e\u0026micro;m\u003c/em\u003e\u003csup\u003e\u003cem\u003e2\u003c/em\u003e\u003c/sup\u003e, the area of the device under consideration is ~\u0026thinsp;54678.3 \u003cem\u003e\u0026micro;m\u003c/em\u003e\u003csup\u003e\u003cem\u003e2\u003c/em\u003e,\u003c/sup\u003e and the separation between the electrodes is ~\u0026thinsp;18 \u003cem\u003e\u0026micro;m\u003c/em\u003e.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eThis device has been tested for Ammonia and Acetone. The electrical response has been taken by varying the gas flow, which has been shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig8\" class=\"InternalRef\"\u003e9\u003c/span\u003e. The shown response in Fig.\u0026nbsp;\u003cspan refid=\"Fig8\" class=\"InternalRef\"\u003e9\u003c/span\u003e (a) is for Acetone at 200 sccm, 150 sccm, 100 sccm, 50 sccm of gas flow, and response in open air condition. Figure\u0026nbsp;\u003cspan refid=\"Fig8\" class=\"InternalRef\"\u003e9\u003c/span\u003e (b) shows the ratio between electrical response at 200 sccm, 150 sccm, 100 sccm, and 50 sccm to response in open-air conditions. The contrast of open air to gas response (OAGR) is higher at 50 sccm to 100 sccm. After 100 sccm to further increments (150 sccm, 200 sccm), the contrast is very low and seems to decrease as it moves to a higher concentration of gas flow.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eGas detection of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin film sensors was evaluated by exposure to Acetone and Ammonia gases. These sensors show a clear response to target gases as it has shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig8\" class=\"InternalRef\"\u003e9\u003c/span\u003e and Fig.\u0026nbsp;\u003cspan refid=\"Fig10\" class=\"InternalRef\"\u003e11\u003c/span\u003e. The highest Dynamic response of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin film sensor to Acetone gas are 1.97\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;4\u003c/sup\u003e A, 0.051 A, 0.115 A, and 0.146 A at 50 sccm, 100 sccm, 150 sccm, and 200 sccm respectively (Fig.\u0026nbsp;\u003cspan refid=\"Fig8\" class=\"InternalRef\"\u003e9\u003c/span\u003e (a)). We define the sensor response as S\u0026thinsp;=\u0026thinsp;R/R\u003csub\u003eo\u003c/sub\u003e, where R is the resistance change caused by gas exposure. R\u003csub\u003eo\u003c/sub\u003e represents the base resistance of Acetone (response in absence of gas) and the equilibrium resistance of Acetone in the detection gas (response in presence of gas) [\u003cspan citationid=\"CR34\" class=\"CitationRef\"\u003e34\u003c/span\u003e, \u003cspan citationid=\"CR35\" class=\"CitationRef\"\u003e35\u003c/span\u003e]. The response as a function of gas concentration is shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig9\" class=\"InternalRef\"\u003e10\u003c/span\u003e and Fig.\u0026nbsp;\u003cspan refid=\"Fig10\" class=\"InternalRef\"\u003e11\u003c/span\u003e for both gases, the response increases with increasing gas concentration. The sensor response (S) has also been plotted and shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig8\" class=\"InternalRef\"\u003e9\u003c/span\u003e (b). The highest recorded response is 3.88\u0026times;10\u003csup\u003e6\u003c/sup\u003e at 200 sccm of Acetone gas flow.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eThe sensing accuracy of the Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin film-based gas detector has also been plotted for varying concentrations of Acetone gas sensor. The accuracy is found to be 93% with the linear fitting of the plotted graph.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eThe highest Dynamic response of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin film gas sensor to Ammonia gas is 1.53\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e A, 1.72\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e A, 2.79\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e A, and 3.11\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e A at 100 sccm, 200 sccm, 300 sccm, and 400 sccm respectively (Fig.\u0026nbsp;\u003cspan refid=\"Fig10\" class=\"InternalRef\"\u003e11\u003c/span\u003e (a), at -5 V). The sensor response (S) has also been plotted and shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig10\" class=\"InternalRef\"\u003e11\u003c/span\u003e (b). The highest recorded response is 8.28\u0026times;10\u003csup\u003e4\u003c/sup\u003e at 400 sccm of Ammonia gas flow (-5 V). The sensing accuracy of the Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin film-based gas detector has also been plotted for varying concentrations of Ammonia gas. The accuracy is found to be 97% with the linear fitting of the plotted graph.\u003c/p\u003e"},{"header":"V. Conclusion","content":"\u003cp\u003eThe Mist Chemical Vapor Deposition technique is one good technique for the deposition of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin film with different phases. The deposited thin film samples (S1, S2, S3) have been characterized with XRD, FESEM, and UV-Spectroscopy and the second sample (S2) has shown a smooth surface with good crystalline quality and UV absorbance band between 300 nm to 200 nm. The optimized sample S2 has also been tested for gas-sensing applications (Acetone, and Ammonia). The sample very good response for Acetone and Ammonia sensing.\u003c/p\u003e"},{"header":"Declarations","content":"\u003cp\u003eAcknowledgment\u003c/p\u003e\n\u003cp\u003e\u0026nbsp;The authors would like to thank the Center for Flexible electronics, Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Vaddeswaram, India, and the Nanoscience and Engineering Department of INJE University, South Korea.\u003c/p\u003e\n\u003cp\u003e\u0026nbsp;This work has been partly supported by Koneru Lakshmaiah Education Foundation, India. (Sanction Order No. KLEF/IFP/2022-23/ECE/0008).\u003c/p\u003e\n\u003cp\u003e\u003cem\u003eEthical Approval\u0026nbsp;\u003c/em\u003e\u003c/p\u003e\n\u003cp\u003eThis declaration is not applicable.\u003c/p\u003e\n\u003cp\u003e\u003cem\u003eCompeting interests\u0026nbsp;\u003c/em\u003e\u003c/p\u003e\n\u003cp\u003eWe all the authors declare no conflict of interest related to the author\u0026apos;s position and corresponding author.\u0026nbsp;\u003c/p\u003e\n\u003cp\u003e\u003cem\u003eAuthors\u0026apos; contributions\u0026nbsp;\u003c/em\u003e\u003c/p\u003e\n\u003cp\u003eAshish Kumar and\u0026nbsp;Marem Padma Praneeth\u0026nbsp;drafted the manuscript. All work has been done by Ashish Kumar. The manuscript is reviewed by\u0026nbsp;AlaaDdin Al-Shidaifat, Hanjung Song, and Shubhro Chakrabartty.\u003c/p\u003e\n\u003cp\u003e\u003cem\u003eFunding\u0026nbsp;\u003c/em\u003e\u003c/p\u003e\n\u003cp\u003eThis work has been partly supported by Koneru Lakshmaiah Education Foundation, India. (Sanction Order No. KLEF/IFP/2022-23/ECE/0008).\u003c/p\u003e\n\u003cp\u003e\u003cem\u003eAvailability of data and materials\u0026nbsp;\u003c/em\u003e\u003c/p\u003e\n\u003cp\u003eThere is no associated data or material related to the manuscript.\u003c/p\u003e"},{"header":"References","content":"\u003col\u003e\n \u003cli\u003eChen, Shuai, et al. \u0026quot;Recent technological advances in fabrication and application of organic electrochemical transistors.\u0026quot; Advanced Materials Technologies 5.12 (2020): 2000523.\u003c/li\u003e\n \u003cli\u003eSoukoulis, Costas M., ed. Photonic band gap materials. Vol. 315. Springer Science \u0026amp; Business Media, 2012.\u003c/li\u003e\n \u003cli\u003eMorkoc, B. H., et al. \u0026quot;Large‐bandgap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies.\u0026quot; Journal of Applied Physics 76.3 (1994): 1363-1398.\u003c/li\u003e\n \u003cli\u003eKim, Munho, et al. \u0026quot;Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, \u0026beta;-Ga 2 O 3, and diamond.\u0026quot; Journal of Materials Chemistry C 5.33 (2017): 8338-8354.\u003c/li\u003e\n \u003cli\u003eJain, Heena, Sapna Rajawat, and Puja Agrawal. \u0026quot;Comparision of wide band gap semiconductors for power electronics applications.\u0026quot; 2008 International conference on recent advances in microwave theory and applications. IEEE, 2008.\u003c/li\u003e\n \u003cli\u003eHuang, Yixian, Zhenguo Ji, and Chen Chen. \u0026quot;Preparation and characterization of p-type transparent conducting tin-gallium oxide films.\u0026quot; Applied surface science 253.11 (2007): 4819-4822.\u003c/li\u003e\n \u003cli\u003eShi, Feng, and Hengyang Qiao. \u0026quot;Preparations, properties, and applications of gallium oxide nanomaterials\u0026ndash;A review.\u0026quot; Nano Select 3.2 (2022): 348-373.\u003c/li\u003e\n \u003cli\u003eStepanov, S., et al. \u0026quot;Gallium OXIDE: Properties and applica 498 a review.\u0026quot; Rev. Adv. Mater. Sci 44 (2016): 63-86.\u003c/li\u003e\n \u003cli\u003eRebien, M., et al. \u0026quot;Optical properties of gallium oxide thin films.\u0026quot; Applied physics letters 81.2 (2002): 250-252.\u003c/li\u003e\n \u003cli\u003eMattox, Donald M. \u0026quot;Physical vapor deposition (PVD) processes.\u0026quot; Metal Finishing 100 (2002): 394-408.\u003c/li\u003e\n \u003cli\u003eCreighton, J. R., and P. Ho. \u0026quot;Introduction to chemical vapor deposition (CVD).\u0026quot; Chemical vapor deposition 2 (2001): 1-22.\u003c/li\u003e\n \u003cli\u003eMoshfegh, A. Z. \u0026quot;PVD growth method: physics and technology.\u0026quot; Physics And Technology Of Thin Films: IWTF 2003 (2004): 28-53.\u003c/li\u003e\n \u003cli\u003eBaptista, Andresa, et al. \u0026quot;On the physical vapor deposition (PVD): evolution of magnetron sputtering processes for industrial applications.\u0026quot; Procedia Manufacturing 17 (2018): 746-757.\u003c/li\u003e\n \u003cli\u003eWasa, Kiyotaka, and Shigeru Hayakawa. \u0026quot;Handbook of sputter deposition technology.\u0026quot; (1992).\u003c/li\u003e\n \u003cli\u003eAnders, Andr\u0026eacute;. \u0026quot;High power impulse magnetron sputtering and related discharges: Scalable plasma sources for plasma-based ion implantation and deposition.\u0026quot; Surface and Coatings Technology 204.18-19 (2010): 2864-2868.\u003c/li\u003e\n \u003cli\u003eMattox, Donald M. \u0026quot;Fundamentals of ion plating.\u0026quot; Journal of Vacuum Science and Technology 10.1 (1973): 47-52.\u003c/li\u003e\n \u003cli\u003eShen, Mingli, et al. \u0026quot;High vacuum arc ion plating NiCrAlY coatings: microstructure and oxidation behavior.\u0026quot; Corrosion Science 94 (2015): 294-304.\u003c/li\u003e\n \u003cli\u003eAhmed, Nadir AG. \u0026quot;Ion plating: optimum surface performance and material conservation.\u0026quot; Thin solid films 241.1-2 (1994): 179-187.\u003c/li\u003e\n \u003cli\u003eSingh, Rajiv K., and J. Narayan. \u0026quot;Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical model.\u0026quot; Physical Review B 41.13 (1990): 8843.\u003c/li\u003e\n \u003cli\u003eSingh, Rajiv K., O. W. Holland, and J. Narayan. \u0026quot;Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique.\u0026quot; Journal of applied physics 68.1 (1990): 233-247.\u003c/li\u003e\n \u003cli\u003eChrisey, Douglas B., and Graham K. Hubler, eds. \u0026quot;Pulsed laser deposition of thin films.\u0026quot; (1994): 3.\u003c/li\u003e\n \u003cli\u003eKrebs, Hans-Ulrich, et al. \u0026quot;Pulsed laser deposition (PLD)--a versatile thin film technique.\u0026quot; Advances in solid state physics (2003): 505-518.\u003c/li\u003e\n \u003cli\u003eFujioka, Hiroshi. \u0026quot;Pulsed laser deposition (PLD).\u0026quot; Handbook of Crystal Growth. North-Holland, 2015. 365-397.\u003c/li\u003e\n \u003cli\u003eGreer, James A., and M. D. Tabat. \u0026quot;Large‐area pulsed laser deposition: Techniques and applications.\u0026quot; Journal of Vacuum Science \u0026amp; Technology A: Vacuum, Surfaces, and Films 13.3 (1995): 1175-1181.\u003c/li\u003e\n \u003cli\u003eHerman, Marian A., and Helmut Sitter. Molecular beam epitaxy: fundamentals and current status. Vol. 7. Springer Science \u0026amp; Business Media, 2012.\u003c/li\u003e\n \u003cli\u003eCho, Alfred Y. \u0026quot;Film deposition by molecular-beam techniques.\u0026quot; Journal of Vacuum Science and Technology 8.5 (1971): S31-S38.\u003c/li\u003e\n \u003cli\u003eShu, Haibo, et al. \u0026quot;Edge structural stability and kinetics of graphene chemical vapor deposition growth.\u0026quot; Acs Nano 6.4 (2012): 3243-3250.\u003c/li\u003e\n \u003cli\u003eViguie, J. C., and J. Spitz. \u0026quot;Chemical vapor deposition at low temperatures.\u0026quot; J. electrochem. Soc 122.4 (1975): 585-588.\u003c/li\u003e\n \u003cli\u003eDang, Giang T., et al. \u0026quot;Mist-CVD Grown Sn-Doped $\\alpha $-Ga 2 O 3 MESFETs.\u0026quot; IEEE Transactions on Electron Devices 62.11 (2015): 3640-3644.\u003c/li\u003e\n \u003cli\u003eMuazzam, Usman Ul, et al. \u0026quot;Optical properties of mist CVD grown \u0026alpha;-Ga 2 O 3.\u0026quot; IEEE Photonics Technology Letters 32.7 (2020): 422-425.\u003c/li\u003e\n \u003cli\u003eQuan, Yu, et al. \u0026quot;Synthesis and characterization of gallium oxide nanowires via a hydrothermal method.\u0026quot; Materials Chemistry and Physics 121.1-2 (2010): 142-146.\u003c/li\u003e\n \u003cli\u003eSharma, Aditya, et al. \u0026quot;Nano-structured phases of gallium oxide (GaOOH, \u0026alpha;-Ga 2 O 3, \u0026beta;-Ga 2 O 3, \u0026gamma;-Ga 2 O 3, \u0026delta;-Ga 2 O 3, and \u0026epsilon;-Ga 2 O 3): Fabrication, structural, and electronic structure investigations.\u0026quot; International Nano Letters 10 (2020): 71-79.\u003c/li\u003e\n \u003cli\u003eKumar, Ashish, et al. \u0026quot;Ga-In nanoparticle induced UV plasmonic impact on heterojunction based deep UV photodetector.\u0026quot; IEEE Transactions on Nanotechnology 21 (2022): 196-203.\u003c/li\u003e\n \u003cli\u003eNakagomi, S., Sai, T., \u0026amp; Kokubun, Y. (2013). Hydrogen gas sensor with self temperature compensation based on \u0026beta;-Ga2O3 thin film. \u003cem\u003eSensors and Actuators B: Chemical\u003c/em\u003e, \u003cem\u003e187\u003c/em\u003e, 413-419.\u003c/li\u003e\n \u003cli\u003eLiu, Z., Yamazaki, T., Shen, Y., Kikuta, T., Nakatani, N., \u0026amp; Li, Y. (2008). O2 and CO sensing of Ga2O3 multiple nanowire gas sensors. \u003cem\u003eSensors and Actuators B: Chemical\u003c/em\u003e, \u003cem\u003e129\u003c/em\u003e(2), 666-670.\u003c/li\u003e\n\u003c/ol\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":true,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":false,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Ultraviolet-Photodetectors, β-Ga2O3, Transparent Conductive Oxide (TCO), MIST-CVD (Chemical Vapor Deposition), Ultra-wideband gap, UV-C","lastPublishedDoi":"10.21203/rs.3.rs-2704726/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-2704726/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eWith the utilization of UV-C radiation sterilizers on the ascension in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill effects on humans. This requires detection systems with felicitous spectral replication to the \u0026ldquo;invisible to the unclad eye\u0026rdquo; radiation leaks with utmost sensitivity and swiftness. Gallium Oxide (Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e), a semiconductor, has gained a lot of attention among researchers due to its ultra-wideband gap (4.9eV) and high critical field with a value of 8 MV/cm. It is Transparent Conductive Oxide (TCO). Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e has five different atomic structures of Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e, namely, the monoclinic (\u003cem\u003eβ\u003c/em\u003e-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e), rhombohedral (α), defective spinel (γ), cubic (δ), and orthorhombic (ε) structures. Of these, the \u003cem\u003eβ\u003c/em\u003e-polymorph is selected because of band gap energy (Eg\u0026thinsp;\u0026asymp;\u0026thinsp;4.7\u0026ndash;4.9 eV), it is highly stable in thermal and chemical properties. In this context, the present article demonstrates the best and most suitable technique for the deposition of \u003cem\u003eβ\u003c/em\u003e-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e (Gallium Oxide). This work demonstrates the layer deposition of \u003cem\u003eβ\u003c/em\u003e-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e (Gallium Oxide) thin-film with MIST-CVD (Chemical Vapor Deposition) and optimization of the deposited layer to the extent of using different techniques and analyzing different plots. This deposited layer on a substrate is used for applications of gas sensors or Ultraviolet-Photodetectors (UV-PDs. This article has also demonstrated the successful application of optimized thin film for gas sensing.\u003c/p\u003e","manuscriptTitle":"Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2023-03-23 18:06:25","doi":"10.21203/rs.3.rs-2704726/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"4ea98ee6-987e-4d16-a4d0-9369223e2b1f","owner":[],"postedDate":"March 23rd, 2023","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2023-04-16T14:14:26+00:00","versionOfRecord":[],"versionCreatedAt":"2023-03-23 18:06:25","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-2704726","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-2704726","identity":"rs-2704726","version":["v1"]},"buildId":"WrCJVZZCHTDjtuVLN7oU0","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}