In-depth investigation of emission homogeneity of InGaAs multiple quantum wells using spatially resolved spectroscopy

Abstract In this study the emission homogeneity of InGaAs multiple quantum wells (MQW) was investigated. Two sets of samples grown by molecular beam epitaxy, with varying In content and QW thickness as well as barrier thickness, were mapped using room temperature photoluminescence and micro-photoluminescence. The result showed that increasing In content leads to a denser net of lattice mismatch dislocations in the QW layer. Samples with optimized barrier design exhibit uniform emission intensity.