Precision Operational Amplifier Using Complementary BJT and n-JFET Input Transistors

A novel precision operational amplifier scheme has been developed and investigated, implemented using complementary bipolar transistors and input field-effect transistors controlled by a p-n junction. Computer simulation of the developed circuit was performed in LTSpice environment, which demonstrates that the proposed schematic solution provides a high voltage gain (over 80 dB) with low static current consumption and relatively low load resistances (RL = 2 kΩ). The systematic component of the zero voltage offset does not exceed 100 µV.