In Situ Investigation of Failure Mechanisms in TGV Interconnect Structures Under Electrical Loading

In Situ Investigation of Failure Mechanisms in TGV Interconnect Structures Under Electrical Loading | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article In Situ Investigation of Failure Mechanisms in TGV Interconnect Structures Under Electrical Loading Haozhong Wang, Bingxu Ma, Peijiang Liu, Wanchun Tian, Hongtao Chen, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-9445006/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract With the trend towards high-frequency, high-power-density packaging, through-glass vias (TGV) are considered a promising alternative to TSVs. However, their reliability under high current density, a critical concern for practical application, remains insufficiently studied. This work systematically investigates the failure mechanisms of TGV interconnect structures under electrical loads. In-situ electromigration experiments were conducted on daisy-chain TGV samples at current densities of 2.3×10 5 , 2.8×10 5 , and 3.0×10 5 A/cm 2 , with real-time resistance monitoring and cross-sectional SEM analysis. Distinct failure modes were identified: at the lowest density, failure was dominated by RDL/glass interfacial delamination with negligible resistance change; at the medium density, electromigration became apparent, accelerating void nucleation/growth and causing a linear resistance increase; at the highest density, severe thermo-mechanical coupling led to glass cracking at the TGV-RDL corner and RDL plastic deformation, resulting in an accelerated resistance rise. Complementary electro-thermo-mechanical finite element simulations revealed significant current crowding at the TGV-RDL corners, with local current density exceeding that at the narrowest via cross-section. The combined temperature field and geometric features jointly determined the stress concentration locations. This study clarifies the failure mechanisms of TGV and provides insights for the reliable design of high-current-density glass interposer packages. Through glass via (TGV) 2.5D/3D integration Interposer Reliability Electromigration (EM) Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-9445006","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":627695063,"identity":"255c28f2-6627-4f9e-9a20-0d9d189d2876","order_by":0,"name":"Haozhong Wang","email":"","orcid":"","institution":"Harbin Institute of Technology (Shenzhen)","correspondingAuthor":false,"prefix":"","firstName":"Haozhong","middleName":"","lastName":"Wang","suffix":""},{"id":627695064,"identity":"c1cc6255-f230-4ad0-8633-0625ea6b7a51","order_by":1,"name":"Bingxu Ma","email":"","orcid":"","institution":"China Electronic Product Reliability and Environmental 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(EM)","lastPublishedDoi":"10.21203/rs.3.rs-9445006/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-9445006/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eWith the trend towards high-frequency, high-power-density packaging, through-glass vias (TGV) are considered a promising alternative to TSVs. However, their reliability under high current density, a critical concern for practical application, remains insufficiently studied. This work systematically investigates the failure mechanisms of TGV interconnect structures under electrical loads. In-situ electromigration experiments were conducted on daisy-chain TGV samples at current densities of 2.3\u0026times;10\u003csup\u003e5\u003c/sup\u003e, 2.8\u0026times;10\u003csup\u003e5\u003c/sup\u003e, and 3.0\u0026times;10\u003csup\u003e5\u003c/sup\u003e A/cm\u003csup\u003e2\u003c/sup\u003e, with real-time resistance monitoring and cross-sectional SEM analysis. Distinct failure modes were identified: at the lowest density, failure was dominated by RDL/glass interfacial delamination with negligible resistance change; at the medium density, electromigration became apparent, accelerating void nucleation/growth and causing a linear resistance increase; at the highest density, severe thermo-mechanical coupling led to glass cracking at the TGV-RDL corner and RDL plastic deformation, resulting in an accelerated resistance rise. Complementary electro-thermo-mechanical finite element simulations revealed significant current crowding at the TGV-RDL corners, with local current density exceeding that at the narrowest via cross-section. The combined temperature field and geometric features jointly determined the stress concentration locations. This study clarifies the failure mechanisms of TGV and provides insights for the reliable design of high-current-density glass interposer packages.\u003c/p\u003e","manuscriptTitle":"In Situ Investigation of Failure Mechanisms in TGV Interconnect Structures Under Electrical Loading","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2026-05-07 18:31:36","doi":"10.21203/rs.3.rs-9445006/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"98c1c018-743d-4bd0-8117-27382fd58a8e","owner":[],"postedDate":"May 7th, 2026","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2026-05-07T18:31:36+00:00","versionOfRecord":[],"versionCreatedAt":"2026-05-07 18:31:36","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-9445006","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-9445006","identity":"rs-9445006","version":["v1"]},"buildId":"XKTyCvWXoU3ODBz1xrDgd","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}