Simulation and Performance Assessment of Dual-segment Recessed AlGaN/GaN HEMT Sensors for Pb2+ Ion Detection Using Functionalized SiO2-APTES

Simulation and Performance Assessment of Dual-segment Recessed AlGaN/GaN HEMT Sensors for Pb2+ Ion Detection Using Functionalized SiO2-APTES | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Simulation and Performance Assessment of Dual-segment Recessed AlGaN/GaN HEMT Sensors for Pb2+ Ion Detection Using Functionalized SiO2-APTES Anup Vasavan, Ramanand A.C, Periasamy C This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7717408/v1 This work is licensed under a CC BY 4.0 License Status: Under Revision Version 1 posted 9 You are reading this latest preprint version Abstract This study presents a comparative analysis of conventional single-segment (Sensor X) and recessed dual-segment (Sensor Y) AlGaN/GaN high electron mobility transistors (HEMTs) for detecting lead (Pb 2+ ) heavy metal ions in aqueous environments. The gate is modified with silicon dioxide (SiO 2 ) functionalized with 3-Aminopropyltriethoxysilane (APTES) which enables effective binding of (Pb 2+ ) ions. The charge deduction methodology was used to evaluate the changes in the surface charge under varying lead ion concentrations. The simulation results demonstrate that Sensors X and Y achieve maximum drain current sensitivities of 17.1% and 27%, respectively. Furthermore, the effect of recess depth on Sensor Y was examined, revealing that an increase in recess depth leads to enhanced sensitivity. The effect of pH on the hydrolysis of Pb 2+ was also analyzed. These results confirm that the recessed dual-gate AlGaN/GaN HEMT offers enhanced sensitivity for the label-free identification of lead ions in aqueous solutions. MOS-HEMT Lead ions recessed gate APTES sensitivity Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Revision Version 1 posted Editorial decision: Revision requested 14 May, 2026 Reviews received at journal 17 Jan, 2026 Reviews received at journal 17 Jan, 2026 Reviewers agreed at journal 09 Jan, 2026 Reviewers agreed at journal 08 Jan, 2026 Reviewers invited by journal 26 Dec, 2025 Editor assigned by journal 29 Sep, 2025 Submission checks completed at journal 29 Sep, 2025 First submitted to journal 25 Sep, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7717408","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":565695495,"identity":"ce567466-4cf2-42f3-acbd-b1fcb4d6a09b","order_by":0,"name":"Anup Vasavan","email":"","orcid":"","institution":"National Institute of Technology Calicut","correspondingAuthor":false,"prefix":"","firstName":"Anup","middleName":"","lastName":"Vasavan","suffix":""},{"id":565695502,"identity":"38af5b2c-2a4d-492d-8fe6-025f004dfcf1","order_by":1,"name":"Ramanand A.C","email":"","orcid":"","institution":"National Institute of Technology 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SiO2-APTES","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"silicon","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scon","sideBox":"Learn more about [Silicon](https://www.springer.com/journal/12633)","snPcode":"12633","submissionUrl":"https://submission.nature.com/new-submission/12633/3","title":"Silicon","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"MOS-HEMT, Lead ions, recessed gate, APTES, sensitivity","lastPublishedDoi":"10.21203/rs.3.rs-7717408/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7717408/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eThis study presents a comparative analysis of conventional single-segment (Sensor X) and recessed dual-segment (Sensor Y) AlGaN/GaN high electron mobility transistors (HEMTs) for detecting lead (Pb\u003csup\u003e\u003cstrong\u003e2+\u003c/strong\u003e\u003c/sup\u003e) heavy metal ions in aqueous environments. The gate is modified with silicon dioxide (SiO\u003csub\u003e2\u003c/sub\u003e) functionalized with 3-Aminopropyltriethoxysilane (APTES) which enables effective binding of (Pb\u003csup\u003e\u003cstrong\u003e2+\u003c/strong\u003e\u003c/sup\u003e) ions. The charge deduction methodology was used to evaluate the changes in the surface charge under varying lead ion concentrations. The simulation results demonstrate that Sensors X and Y achieve maximum drain current sensitivities of 17.1% and 27%, respectively. Furthermore, the effect of recess depth on Sensor Y was examined, revealing that an increase in recess depth leads to enhanced sensitivity. The effect of pH on the hydrolysis of Pb\u003csup\u003e\u003cstrong\u003e2+\u003c/strong\u003e\u003c/sup\u003e was also analyzed. These results confirm that the recessed dual-gate AlGaN/GaN HEMT offers enhanced sensitivity for the label-free identification of lead ions in aqueous solutions.\u003c/p\u003e","manuscriptTitle":"Simulation and Performance Assessment of Dual-segment Recessed AlGaN/GaN HEMT Sensors for Pb2+ Ion Detection Using Functionalized SiO2-APTES","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-12-29 06:23:11","doi":"10.21203/rs.3.rs-7717408/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"Revision requested","date":"2026-05-14T07:16:53+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2026-01-17T14:27:58+00:00","index":"hide","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2026-01-17T05:01:22+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"73943015058460660198926726869912175556","date":"2026-01-10T01:38:00+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"239469306237734961471621524055144178403","date":"2026-01-08T10:24:50+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2025-12-26T06:17:07+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2025-09-29T13:21:41+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2025-09-29T13:21:28+00:00","index":"","fulltext":""},{"type":"submitted","content":"Silicon","date":"2025-09-26T03:52:51+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"silicon","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scon","sideBox":"Learn more about [Silicon](https://www.springer.com/journal/12633)","snPcode":"12633","submissionUrl":"https://submission.nature.com/new-submission/12633/3","title":"Silicon","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"785eda69-7f6f-435e-9c22-d6f8976f5cdb","owner":[],"postedDate":"December 29th, 2025","published":true,"recentEditorialEvents":[{"type":"decision","content":"Revision requested","date":"2026-05-14T07:16:53+00:00","index":"","fulltext":""}],"rejectedJournal":[],"revision":"","amendment":"","status":"in-revision","subjectAreas":[],"tags":[],"updatedAt":"2026-05-14T07:26:09+00:00","versionOfRecord":[],"versionCreatedAt":"2025-12-29 06:23:11","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7717408","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7717408","identity":"rs-7717408","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}