Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors Yen-Fu Lin, Che-Yi Lin, Bo-Cia Chen, Yu-Chen Liu, Shang-Fu Kuo, and 12 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4326620/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 26 Jun, 2025 Read the published version in Nature Electronics → Version 1 posted You are reading this latest preprint version Abstract Transistor miniaturization enables integrating billions on a chip but also introduces heat and mobility issues. Two-dimensional (2D) semiconductors, with their ultrathin nature, offer a promising solution to achieving superior gate control. However, the lack of insulators suitable for integration into fully scalable 2D process flows limits their practical use. Here, we report the integration of freestanding Hf 0.5 Zr 0.5 O 2 (HZO) membranes as top-gate high-κ dielectrics in conjunction with 2D semiconductors. The HZO dielectrics exhibit classic ferroelectric feature, boasting high dielectric constant (~ 19.5), along with low leakage current (< 2.6×10 − 6 A cm − 2 at 1 MV cm − 1 ). Capitalizing on these advantages, we fabricate molybdenum disulfide (MoS 2 ) transistors with HZO dielectrics, achieving an on/off ratio of 10 9 and a subthreshold swing of 53 mV dec − 1 . Additionally, we demonstrate HZO-gated 2D transistors’s capability to implement inverter, NAND, NOR, AND, OR, XOR, XNOR logic functions and a 1-bit full adder. Finally, we create a MoS 2 transistor with a channel length of ~ 13 nm, exhibiting an on/off of over 10 8 and SS of 70 mV dec − 1 . The successful integration of ferroelectric, high-κ HZO as a top gate material effectively addresses current challenges and paves the way for the advancement of 3D integrated circuits utilizing 2D materials. Physical sciences/Engineering/Electrical and electronic engineering Physical sciences/Materials science/Condensed-matter physics/Semiconductors/Two-dimensional materials Physical sciences/Materials science/Materials for devices/Electronic devices Physical sciences/Materials science/Nanoscale materials/Two-dimensional materials Physical sciences/Nanoscience and technology/Nanoscale devices/Electronic devices Full Text Additional Declarations There is NO Competing Interest. Supplementary Files Supplementary20240426.docx Cite Share Download PDF Status: Published Journal Publication published 26 Jun, 2025 Read the published version in Nature Electronics → Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4326620","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":296649111,"identity":"0e25097f-0186-4b38-9e5b-b6ddbad7de4b","order_by":0,"name":"Yen-Fu 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Transistors","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"nature-portfolio","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"","title":"Nature Portfolio","twitterHandle":"","acdcEnabled":false,"dfaEnabled":false,"editorialSystem":"ejp","reportingPortfolio":"","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-4326620/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-4326620/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eTransistor miniaturization enables integrating billions on a chip but also introduces heat and mobility issues. Two-dimensional (2D) semiconductors, with their ultrathin nature, offer a promising solution to achieving superior gate control. However, the lack of insulators suitable for integration into fully scalable 2D process flows limits their practical use. Here, we report the integration of freestanding Hf\u003csub\u003e0.5\u003c/sub\u003eZr\u003csub\u003e0.5\u003c/sub\u003eO\u003csub\u003e2\u003c/sub\u003e (HZO) membranes as top-gate high-κ dielectrics in conjunction with 2D semiconductors. The HZO dielectrics exhibit classic ferroelectric feature, boasting high dielectric constant (~\u0026thinsp;19.5), along with low leakage current (\u0026lt;\u0026thinsp;2.6\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;6\u003c/sup\u003e A cm\u003csup\u003e\u0026minus;\u0026thinsp;2\u003c/sup\u003e at 1 MV cm\u003csup\u003e\u0026minus;\u0026thinsp;1\u003c/sup\u003e). Capitalizing on these advantages, we fabricate molybdenum disulfide (MoS\u003csub\u003e2\u003c/sub\u003e) transistors with HZO dielectrics, achieving an on/off ratio of 10\u003csup\u003e9\u003c/sup\u003e and a subthreshold swing of 53 mV dec\u003csup\u003e\u0026minus;\u0026thinsp;1\u003c/sup\u003e. Additionally, we demonstrate HZO-gated 2D transistors\u0026rsquo;s capability to implement inverter, NAND, NOR, AND, OR, XOR, XNOR logic functions and a 1-bit full adder. Finally, we create a MoS\u003csub\u003e2\u003c/sub\u003e transistor with a channel length of ~\u0026thinsp;13 nm, exhibiting an on/off of over 10\u003csup\u003e8\u003c/sup\u003e and SS of 70 mV dec\u003csup\u003e\u0026minus;\u0026thinsp;1\u003c/sup\u003e. The successful integration of ferroelectric, high-κ HZO as a top gate material effectively addresses current challenges and paves the way for the advancement of 3D integrated circuits utilizing 2D materials.\u003c/p\u003e","manuscriptTitle":"Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2024-05-03 09:56:49","doi":"10.21203/rs.3.rs-4326620/v1","editorialEvents":[],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"nature-electronics","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"natelectron","sideBox":"Learn more about [Nature Electronics](http://www.nature.com/natelectron/)","snPcode":"","submissionUrl":"","title":"Nature Electronics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature Research","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"4c44112c-a8d5-4549-8dc6-046a30d53324","owner":[],"postedDate":"May 3rd, 2024","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"published-in-journal","subjectAreas":[{"id":31285860,"name":"Physical sciences/Engineering/Electrical and electronic engineering"},{"id":31285861,"name":"Physical sciences/Materials science/Condensed-matter physics/Semiconductors/Two-dimensional materials"},{"id":31285862,"name":"Physical sciences/Materials science/Materials for devices/Electronic devices"},{"id":31285863,"name":"Physical sciences/Materials science/Nanoscale materials/Two-dimensional materials"},{"id":31285864,"name":"Physical sciences/Nanoscience and technology/Nanoscale devices/Electronic devices"}],"tags":[],"updatedAt":"2025-06-27T07:06:20+00:00","versionOfRecord":{"articleIdentity":"rs-4326620","link":"https://doi.org/10.1038/s41928-025-01398-y","journal":{"identity":"nature-electronics","isVorOnly":false,"title":"Nature Electronics"},"publishedOn":"2025-06-26 04:00:00","publishedOnDateReadable":"June 26th, 2025"},"versionCreatedAt":"2024-05-03 09:56:49","video":"","vorDoi":"10.1038/s41928-025-01398-y","vorDoiUrl":"https://doi.org/10.1038/s41928-025-01398-y","workflowStages":[]},"version":"v1","identity":"rs-4326620","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-4326620","identity":"rs-4326620","version":["v1"]},"buildId":"qtupq5eGEP_6zYnWcrvyt","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}