High Photo Switching Response of n-ZnO/i-MoS2/p-Si Heterojunction Solar Cell

Abstract In this research work, We investigate the enhancement of photo conversion efficiency from ZnO nanostructure and MoS2 switching mechanism of heterostructure solar cell.The carrier transport of MoS2 generating more electron-hole pairs in the MoS2/Si interface.The photo switching resistance of MoS2 active layer that increasing in short circuit density to 40.9964[mA/cm2], and the effective light trapping of ZnO nanostructure with optimized thickness of ZnO,MoS2 better thermal stability.The SRH heating and Joule heating are minimized by photoswitching characterstics.The Joule and SRH heating rate evaluated from stationary mode of study and the values in the magnitude order of 1013 W/m3 and 1012 W/m3 The use of both ZnO and MoS2 nanostructure leads to total generation rate,charge carrier transport are improved.The photo conversion efficiency is achieved by 27.7364%