On Approach to Optimize Manufacturing of a Four Stages Distributed Amplifier to Increase Density of Their Elements Under Influence of Miss-match Induced Stress and Porosity of Materials on Technological Process

We consider a way to obtain larger density of field-effect transistors, which includes into itself a four stages distributed amplifier. To describe the way we will consider fabrication the above amplifier in the framework of a heterostructure, which has a specifical structure. Some specific areas of the considered heterostructure must be doped by ion implantation or by diffusion. After the doping the considered dopant and radiation defects, which were generated during ion implantation, must be annealed by using considered in this paper optimized procedure. We also introduced a way for reducing of value of mismatch-induced stress in the framework of the considered heterostructure. It has been also introduced an analytical methodology for analysis of mass transport in the framework of the heterostructures during production of the considered type of integrated circuits. The methodology gives a possibility to take into account mismatch-induced stress.