Sub-Volt High-Speed Silicon MOSCAP Microring Modulator Driven by High Mobility Conductive Oxide

Abstract Low driving voltage (Vpp), high-speed silicon microring modulator plays a critical role in energy-efficient optical interconnect and optical computing systems owing to its ultra-compact footprint and capability for on-chip wavelength-division multiplexing. However, existing silicon microring modulators usually require more than 2 V of Vpp, which is limited by the relatively weak plasma dispersion effect of silicon and the small capacitance density of the reversed PN-junction. Here we present a highly efficient metal-oxide semiconductor capacitor (MOSCAP) microring modulator through heterogeneous integration between silicon photonics and titanium-doped indium oxide, which is a high-mobility transparent conductive oxide (TCO) material with a strong plasma dispersion effect. The device is co-fabricated by Intel's photonics fab and TCO patterning processes at Oregon State University, which exhibits a high electro-optic modulation efficiency of 117 pm/V with a low Vπ•L of 0.12 V•cm, and consequently can be driven by an extremely low Vpp of 0.8 V. At a 11 GHz modulation bandwidth where the modulator is limited by the high parasitic capacitance, we obtained 25 Gb/s clear eye diagrams with energy efficiency of 53 fJ/bit and demonstrated 35 Gb/s open eyes with a higher driving voltage. Further optimization of the device is expected to increase the modulation bandwidth up to 52 GHz that can encode data at 100 Gb/s for next-generation, energy-efficient optical communication and computation with sub-volt driving voltage without using any high voltage swing amplifier.