Design and Energy Analysis of a New Fault-Tolerant SRAM Cell in Quantum-dot Cellular Automata

Abstract Quantum-dot cellular automata (QCA) is an emerging technology pro posed in response to the limitations of CMOS technology. Moreover, static RAM (SRAM) is a crucial part of memory design, and efficient RAM design can play a significant role in this regard. This paper proposes a fault-tolerant QCA SRAM cell based on QCA three- and five-input majority gates. A novel structure of QCA-RAM based on a fault-tolerant five-input majority cell is proposed, which outperformed its counterparts in terms of complexity, area, and total energy dissipation. The proposed design is implemented on a single layer and does not require any rotated cell, which significantly improves the manufacturability and robustness of the design. Furthermore, our design can tolerate a single omission fault. Our majority gate improves complexity, area, and energy dissi pation, on average, by 54%, 68%, and 67% in 1 Ek, respectively, as compared to its previous counterparts. The proposed fault-tolerant SRAM cell improves the complexity, area, and total energy dissipation by almost 13%, 25%, and 35% in 1 Ek, respectively, as compared to its state-of-the-art QCA-based single-layer fault-tolerant counterpart.