The anomalous Hall effects and Rashba-Edelstein magnetoresistance in the ferrimagnetic Mn1.84Co0.46V0.86Al film

Abstract Ferrimagnets have attracted increasing attention in spintronics due to the possibility of easy manipulation by magnetic or electric fields. In this study, we report the anomalous Hall effect (AHE) and Rashba-Edelstein magnetoresistance (REMR) in the new ferrimagnetic Mn1.84Co0.46V0.86Al (MCVA) films. The anomalous Hall resistivity (ρxy) changes gradually from negative to positive values with increasing film thickness. By separating the contributions of AHE, it is demonstrated that the thickness dependence origins from the competition between the skew scattering contribution and the sum of the side jumping and intrinsic terms. Besides the intrinsic bulk effect of MCVA, the interface Rashba-Edelstein effect also obviously influences the transport property of MCVA-based devices due to interfacial spin-orbit coupling (SOC). As the magnetic field increasing, the magnetic moments of MCVA switch from collinear to non-collinear, resulting in an inversion of the REMR signal of MCVA/Al2O3 devices. The magnetic coupling state evolution in MCVA gives a pathway for signal inversion in REMR at interfaces without heavy metal layer, which provides valuable ideas for spintronic device design.