Numerical and Analytical Exploration of Memory Effects in Magneto-Photo-Thermoelasticity of Isotropic Semiconductors using the 3PH Lag Model

Numerical and Analytical Exploration of Memory Effects in Magneto-Photo-Thermoelasticity of Isotropic Semiconductors using the 3PH Lag Model | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Numerical and Analytical Exploration of Memory Effects in Magneto-Photo-Thermoelasticity of Isotropic Semiconductors using the 3PH Lag Model Kirti K. Jojare, Kishor R. Gaikwad This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-3834805/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 27 Feb, 2024 Read the published version in Mechanics of Time-Dependent Materials → Version 1 posted 7 You are reading this latest preprint version Abstract The objective of this article is to delve into the isotropic three-phase (3PH) lag magneto photo-thermoelastic (PTE) theory in semiconductor medium, with a special emphasis on its memory-dependent-derivative (MDD) characteristics. The equations for displacement, temperature distribution, carrier density, and stress components resulting from this theory are formulated using these characteristics and then transformed into a Fourier-Laplace vector matrix differential equation. This equation is solved using an eigenvalue approach, and the numerical solution is obtained by inverting Fourier and Laplace transforms. Graphical solutions based on the properties of silicon material are visualized using Mathematica software. The results demonstrate the excellence of MDD in this 3PH model by showing the effect of coupling between thermal, plasma, and elastic waves with the presence of time delay parameters and linear kernel function. Additionally, the presence of several kernel functions reveals significant differences in these magneto PTE quantities. This theory will aid in better characterizing materials, optimizing device design, and exploring non-linear and transient phenomena in greater detail. Ultimately, these advancements will push the boundaries of photo-thermal science and its practical applications. Magneto-Photo-thermoelasticity Memory-dependent-derivative Semiconductor medium Three-Phase-Lag Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 27 Feb, 2024 Read the published version in Mechanics of Time-Dependent Materials → Version 1 posted Editorial decision: Revision requested 24 Jan, 2024 Reviews received at journal 11 Jan, 2024 Reviewers agreed at journal 10 Jan, 2024 Reviewers invited by journal 10 Jan, 2024 Editor assigned by journal 10 Jan, 2024 Submission checks completed at journal 10 Jan, 2024 First submitted to journal 04 Jan, 2024 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-3834805","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":266435947,"identity":"8964001a-0f2f-45b2-a718-1ffc89f872fe","order_by":0,"name":"Kirti K. 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The equations for displacement, temperature distribution, carrier density, and stress components resulting from this theory are formulated using these characteristics and then transformed into a Fourier-Laplace vector matrix differential equation. This equation is solved using an eigenvalue approach, and the numerical solution is obtained by inverting Fourier and Laplace transforms. Graphical solutions based on the properties of silicon material are visualized using Mathematica software. The results demonstrate the excellence of MDD in this 3PH model by showing the effect of coupling between thermal, plasma, and elastic waves with the presence of time delay parameters and linear kernel function. Additionally, the presence of several kernel functions reveals significant differences in these magneto PTE quantities. This theory will aid in better characterizing materials, optimizing device design, and exploring non-linear and transient phenomena in greater detail. 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