Abstract
With the continuous growth of the global economy, high-speed railways and urban rail transit systems have undergone rapid development. Consequently, the demand for locomotive electrical equipment and platform-door power supply systems has increased. As a core component, the SiC MOSFET plays a pivotal role in these systems. Silicon carbide (SiC) MOSFETs represent a significant advancement in power semiconductor technology, offering superior performance in high-temperature and high-frequency applications. However, their electrical characteristics exhibit a pronounced temperature dependence, comprehensive and precise, analysis to achieve reliable power converter designs. To gain a more comprehensive and precise understanding of device operational performance, this paper first introduces the working principle of SiC MOSFETs, then systematically analyzes the effect of elevated temperatures on their electrical dynamic parameters, and finally derives and evaluates the temperature-dependent trends of device losses, switching voltage, and current variation rates with temperature. Additionally, simulations and verifications are also conducted. This analysis lays the foundation for the safe application of SiC MOSFETs in the transportation field.
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Keywords
- high-temperature electronics
- semiconductor diodes
- power semiconductor devices
- power MOSFET
- power electronics
- power electronics
- Power Electronics, Energy Conversion and Sustainability
- power convertors
- PWM power convertors
- switched mode power supplies
- power MOSFET
- electrical safety
- temperature control
- dynamic programming
- power electronics
- Power Electronics, Energy Conversion and Sustainability
- power convertors
- PWM power convertors
- switched mode power supplies
- high-temperature electronics
- semiconductor diodes
- power semiconductor devices
- power MOSFET
- power electronics
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haobo guo, Chao Zhou, Fan Li, et al.
Analysis of the Influence of High Temperature on the Electrical Dynamic Parameters of SiC MOSFETs. Authorea. 12 May 2026.
DOI: https://doi.org/10.22541/authorea.15003034/v1
DOI: https://doi.org/10.22541/authorea.15003034/v1
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