Current-Induced Magnetic Field Free Switching in Spin Filter Tunnel Junctions

Current-Induced Magnetic Field Free Switching in Spin Filter Tunnel Junctions | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Letter Current-Induced Magnetic Field Free Switching in Spin Filter Tunnel Junctions Bhagwati Prasad, Vinod Kumar, Suryakanta Mondal, Akshat Godha, and 6 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4987318/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract Adopting current-driven switching mechanisms in spintronic devices has effectively addressed the challenges of magnetic field-dependent switching and large device footprints ( 1 , 2 ), thereby providing a high-density, fast, energy-efficient, and non-volatile memory solution for massive data handling 3–7. The Spin-Filter Tunnel Junction (SFTJ) is emerging as an alternative spintronic device for memory applications ( 8 , 9 ). However, until now, SFTJ devices have been manipulated by external magnetic fields. This paper reports the current-induced switching in the SFTJ devices, where the magnetic state of the ferromagnetic insulating manganite, Sm 0.75 Sr 0.25 MnO 3 (SSMO), serving as the spin-filter barrier, is manipulated by the current. The realization of these devices involved the growth of lattice-matched oxide heterostructures and the fabrication of nanopillar tunnel devices, achieving an unconventional magnetoresistance (MR) of approximately 200% at 5K. This work highlights the strong influence of applied current on the magnetic switching field, suggesting a current-induced inverse metamagnetic transition in the ferromagnetic insulating barrier layer. Through comprehensive analysis under various experimental conditions and supported by theoretical calculations, this study presents the first demonstration of current-induced magnetic field-free switching in SFTJ devices. This marks a significant advancement in the field of spintronics, particularly at low temperatures, for energy-efficient cryogenic memory technology applicable to quantum electronics ( 10 , 11 ) and quantum computing ( 12 , 13 ). Physical sciences/Materials science/Condensed-matter physics/Spintronics Physical sciences/Physics/Electronics, photonics and device physics/Electronic and spintronic devices Full Text Additional Declarations There is NO Competing Interest. Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4987318","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Letter","associatedPublications":[],"authors":[{"id":358026411,"identity":"d1f20ff3-98e3-47a5-92b5-2d4aa5c011f6","order_by":0,"name":"Bhagwati 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01:30:49","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-4987318/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-4987318/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":66303242,"identity":"6e5f0f43-025a-4530-b451-a21c47fa21a7","added_by":"auto","created_at":"2024-10-10 06:43:57","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1967430,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-4987318/v1_covered_681c9052-e2f9-4709-9c5b-dbd1964507e4.pdf"}],"financialInterests":"There is \u003cb\u003eNO\u003c/b\u003e Competing Interest.","formattedTitle":"Current-Induced Magnetic Field Free Switching in Spin Filter Tunnel 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Portfolio","twitterHandle":"","acdcEnabled":false,"dfaEnabled":false,"editorialSystem":"ejp","reportingPortfolio":"","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-4987318/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-4987318/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003e \u003cb\u003eAdopting current-driven switching mechanisms in spintronic devices has effectively addressed the challenges of magnetic field-dependent switching and large device footprints\u003c/b\u003e(\u003cspan citationid=\"CR1\" class=\"CitationRef\"\u003e1\u003c/span\u003e, \u003cspan citationid=\"CR2\" class=\"CitationRef\"\u003e2\u003c/span\u003e), \u003cb\u003ethereby providing a high-density, fast, energy-efficient, and non-volatile memory solution for massive data handling\u003c/b\u003e3\u0026ndash;7. \u003cb\u003eThe Spin-Filter Tunnel Junction (SFTJ) is emerging as an alternative spintronic device for memory applications\u003c/b\u003e(\u003cspan citationid=\"CR8\" class=\"CitationRef\"\u003e8\u003c/span\u003e, \u003cspan citationid=\"CR9\" class=\"CitationRef\"\u003e9\u003c/span\u003e). \u003cb\u003eHowever, until now, SFTJ devices have been manipulated by external magnetic fields. This paper reports the current-induced switching in the SFTJ devices, where the magnetic state of the ferromagnetic insulating manganite, Sm\u003c/b\u003e\u003csub\u003e\u003cb\u003e0.75\u003c/b\u003e\u003c/sub\u003e\u003cb\u003eSr\u003c/b\u003e\u003csub\u003e\u003cb\u003e0.25\u003c/b\u003e\u003c/sub\u003e\u003cb\u003eMnO\u003c/b\u003e\u003csub\u003e\u003cb\u003e3\u003c/b\u003e\u003c/sub\u003e \u003cb\u003e(SSMO), serving as the spin-filter barrier, is manipulated by the current. The realization of these devices involved the growth of lattice-matched oxide heterostructures and the fabrication of nanopillar tunnel devices, achieving an unconventional magnetoresistance (MR) of approximately 200% at 5K. This work highlights the strong influence of applied current on the magnetic switching field, suggesting a current-induced inverse metamagnetic transition in the ferromagnetic insulating barrier layer. Through comprehensive analysis under various experimental conditions and supported by theoretical calculations, this study presents the first demonstration of current-induced magnetic field-free switching in SFTJ devices. This marks a significant advancement in the field of spintronics, particularly at low temperatures, for energy-efficient cryogenic memory technology applicable to quantum electronics\u003c/b\u003e(\u003cspan citationid=\"CR10\" class=\"CitationRef\"\u003e10\u003c/span\u003e, \u003cspan citationid=\"CR11\" class=\"CitationRef\"\u003e11\u003c/span\u003e) \u003cb\u003eand quantum computing\u003c/b\u003e(\u003cspan citationid=\"CR12\" class=\"CitationRef\"\u003e12\u003c/span\u003e, \u003cspan citationid=\"CR13\" class=\"CitationRef\"\u003e13\u003c/span\u003e).\u003c/p\u003e","manuscriptTitle":"Current-Induced Magnetic Field Free Switching in Spin Filter Tunnel Junctions","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2024-10-10 06:35:46","doi":"10.21203/rs.3.rs-4987318/v1","editorialEvents":[],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"nature-communications","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"NCOMMS","sideBox":"Learn more about [Nature Communications](http://www.nature.com/ncomms/)","snPcode":"","submissionUrl":"https://mts-ncomms.nature.com/","title":"Nature Communications","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature Communications","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"adab99ba-9a30-485a-862e-d4ab5db9195e","owner":[],"postedDate":"October 10th, 2024","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[{"id":38088916,"name":"Physical sciences/Materials science/Condensed-matter physics/Spintronics"},{"id":38088917,"name":"Physical sciences/Physics/Electronics, photonics and device physics/Electronic and spintronic devices"}],"tags":[],"updatedAt":"2026-01-14T21:10:08+00:00","versionOfRecord":[],"versionCreatedAt":"2024-10-10 06:35:46","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-4987318","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-4987318","identity":"rs-4987318","version":["v1"]},"buildId":"qtupq5eGEP_6zYnWcrvyt","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}