Polarization Effects and Design Optimization of InGaN/GaN Coupled Dual Quantum Well Laser for Near-Ultraviolet Emission

Polarization Effects and Design Optimization of InGaN/GaN Coupled Dual Quantum Well Laser for Near-Ultraviolet Emission | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Polarization Effects and Design Optimization of InGaN/GaN Coupled Dual Quantum Well Laser for Near-Ultraviolet Emission Redouane Sersar, Haddou El Ghazi, Redouane En-nadir, Ilyas Ez-zejari, and 3 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-8639726/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract III-nitride-based lasers are promising light sources for visible and near-ultraviolet applications, yet their performance is heavily governed by the interplay between material composition and heterostructure design. This paper presents a polarization-enhanced physical modeling framework for InGaN/GaN coupled dual quantum well (DQW) lasers emitting in the 382–394 nm spectral range. The model explicitly accounts for spontaneous and piezoelectric polarization fields, strain effects, and composition-dependent material properties. Optical gain is evaluated via interband transitions between quantized electron and hole states to assess the impact of indium content, quantum well thickness, and barrier design on carrier confinement and inter-well coupling. Simulation results indicate that optimized structures (L w = 2.0 nm, x In =12%) can achieve peak optical gain exceeding 360 cm⁻¹ and output powers reaching 8.75 mW at threshold currents of 25.34 mA, while remaining compatible with practical epitaxial growth constraints. These findings provide clear design guidelines for high-performance III-nitride multi-quantum-well laser devices. III-nitride lasers MQW Strain Quantum confinement spontaneous and piezoelectric polarization optical gain output power Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-8639726","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":577916913,"identity":"ef3ea6c3-5230-4723-80ab-e0bea520a394","order_by":0,"name":"Redouane Sersar","email":"","orcid":"","institution":"University Hassan II","correspondingAuthor":false,"prefix":"","firstName":"Redouane","middleName":"","lastName":"Sersar","suffix":""},{"id":577916914,"identity":"ff146363-437f-4846-b847-84bbea8f3f42","order_by":1,"name":"Haddou El Ghazi","email":"","orcid":"","institution":"University Hassan 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gain, output power","lastPublishedDoi":"10.21203/rs.3.rs-8639726/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-8639726/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eIII-nitride-based lasers are promising light sources for visible and near-ultraviolet applications, yet their performance is heavily governed by the interplay between material composition and heterostructure design. This paper presents a polarization-enhanced physical modeling framework for InGaN/GaN coupled dual quantum well (DQW) lasers emitting in the 382\u0026ndash;394 nm spectral range. The model explicitly accounts for spontaneous and piezoelectric polarization fields, strain effects, and composition-dependent material properties. Optical gain is evaluated via interband transitions between quantized electron and hole states to assess the impact of indium content, quantum well thickness, and barrier design on carrier confinement and inter-well coupling. Simulation results indicate that optimized structures (L\u003cem\u003ew\u003c/em\u003e\u0026thinsp;=\u0026thinsp;2.0 nm, \u003cem\u003ex\u003c/em\u003e\u003csub\u003eIn\u003c/sub\u003e=12%) can achieve peak optical gain exceeding 360 cm⁻\u0026sup1; and output powers reaching 8.75 mW at threshold currents of 25.34 mA, while remaining compatible with practical epitaxial growth constraints. 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