Semimetal-enabled Rectenna for Sub-THz Wireless Energy Harvesting and Wave-mixing | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Semimetal-enabled Rectenna for Sub-THz Wireless Energy Harvesting and Wave-mixing Lin Wang, Zhaowen Bao, Xiaokai Pan, Yinghui Liu, Yiming Wang, and 10 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7812732/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Topological semimetals, due to their distinctive band structures and topological protection characteristics, show up high mobility and peculiar transport properties, enabling significant nonlinear effects for the efficient technical exploitation at milllimeter-wave/terahertz (THz) range. Here, a layered topological semimetal β-PdBi2 was synthesized via the melt-growth technique, and subsequently integrated with graphene to form an always-on Dirac source (DS) rectenna in terms of van-der Waals integration, leveraging over the unique electronic and mechanical properties of topological semimetals, as well as the efficient thermionic emission without Fermi-level pinning. The rectenna demonstrates exceptional performance metrics across a frequency range from 0.02 to 0.32 THz, in terms of responsivity as high as 805 V/W, fast response time of 163 ns and a noise equivalent power (NEP) as low as 1.03×10⁻11 W/Hz1/2 even at zero-bias, underscores its outstanding performance in low-noise environments. Moreover, the rectenna acts also as a sub-THz mixer, realizing frequency-conversion beyond 100 GHz accompanied with tunable intermediate frequency bandwidth exceeds 53 GHz, rival with state-of-art graphene microwave device. Our strategy provides a universal energy-harvesting building block that become increasingly ubiquitous applications extended through millimeter-wave and terahertz, represent an encouraging advance towards semimetal electronics. Physical sciences/Physics/Electronics, photonics and device physics Physical sciences/Physics/Electronics, photonics and device physics/Photonic devices Full Text Additional Declarations There is no conflict of interest Supplementary Files 3.SupplementaryInformation.docx Semimetal-enabled Rectenna for Sub-THz Wireless Energy Harvesting and Wave-mixing Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7812732","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":529265861,"identity":"ba352671-5f96-49f7-96f4-86af5f0fdb30","order_by":0,"name":"Lin Wang","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA/klEQVRIie3RMWvCQBTA8SeBuAiu52K/wiuB005+lctillgKXUVOCjr2k3RwCbgdHOiiZM3gkCzSweGmThn6TgRxuJCx0PvDkRzkx7skAD7fX61EGAJ0lgqAtSQCISIiLWlpBEAs6UqkxRjcH/W3eDslX2tNU+rxYgRBZWB+cpPD63Qs8DzLDrFUnRVjLzKMGOzOTsJVylGgnmXKEskYKuD0XtpN8suVJDyv7MEs6f40kyKNSiKCFzQFQkt6zVMmxYXTR9bPWUFT4hUbbD9670zs3GTwmUbG1PqJ50lVmnrRH3XXG2PmbkKF918haGFwu2koMA9bbH7a5/P5/mG/GZdbvF3CKpMAAAAASUVORK5CYII=","orcid":"https://orcid.org/0000-0001-6177-5289","institution":"Shanghai Institute of Technical Physics, Chinese Academy of Sciences","correspondingAuthor":true,"prefix":"","firstName":"Lin","middleName":"","lastName":"Wang","suffix":""},{"id":529265862,"identity":"3245a115-58ce-4db9-b7f1-85cbe85f9364","order_by":1,"name":"Zhaowen Bao","email":"","orcid":"","institution":"School of Physical Science and Technology, ShanghaiTech University","correspondingAuthor":false,"prefix":"","firstName":"Zhaowen","middleName":"","lastName":"Bao","suffix":""},{"id":529265863,"identity":"f08bd8d3-502b-425e-b589-16f05d1714f1","order_by":2,"name":"Xiaokai Pan","email":"","orcid":"","institution":"State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences","correspondingAuthor":false,"prefix":"","firstName":"Xiaokai","middleName":"","lastName":"Pan","suffix":""},{"id":529265864,"identity":"a8a31211-b1ba-430d-b4a0-60bb2f87cdd8","order_by":3,"name":"Yinghui Liu","email":"","orcid":"","institution":"State Key Laboratory of Crystal Materials, Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, Tianjin University of Technology Tianjin","correspondingAuthor":false,"prefix":"","firstName":"Yinghui","middleName":"","lastName":"Liu","suffix":""},{"id":529265865,"identity":"21759694-e15c-45fb-99b1-bd6b83440d32","order_by":4,"name":"Yiming Wang","email":"","orcid":"","institution":"Shanghai Institute of Technical Physics","correspondingAuthor":false,"prefix":"","firstName":"Yiming","middleName":"","lastName":"Wang","suffix":""},{"id":529265866,"identity":"80461d6f-967a-484a-b7c6-a3a763f2866a","order_by":5,"name":"Yingdong Wei","email":"","orcid":"","institution":"Shanghai Institute of Technical Physics, Chinese Academy of Sciences","correspondingAuthor":false,"prefix":"","firstName":"Yingdong","middleName":"","lastName":"Wei","suffix":""},{"id":529265867,"identity":"582a4315-6abd-4fc0-b5ed-33cab38c0883","order_by":6,"name":"Zhen Hu","email":"","orcid":"","institution":"Shanghai Institute of Technical Physics of the Chinese Academy of Sciences","correspondingAuthor":false,"prefix":"","firstName":"Zhen","middleName":"","lastName":"Hu","suffix":""},{"id":529265868,"identity":"3eb6fddc-a8b6-4ac2-add1-4f50b5a96e53","order_by":7,"name":"Yichong Zhang","email":"","orcid":"","institution":"Department of Optoelectronic Science and Engineering, Donghua University","correspondingAuthor":false,"prefix":"","firstName":"Yichong","middleName":"","lastName":"Zhang","suffix":""},{"id":529265869,"identity":"415647c4-c56b-4f7c-82c5-76ad895fc5ed","order_by":8,"name":"Xiaoyun Wang","email":"","orcid":"","institution":"State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences","correspondingAuthor":false,"prefix":"","firstName":"Xiaoyun","middleName":"","lastName":"Wang","suffix":""},{"id":529265870,"identity":"ec1136ba-df20-4442-b0b5-fe240f3c6f74","order_by":9,"name":"Huichuan Fan","email":"","orcid":"","institution":"State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences","correspondingAuthor":false,"prefix":"","firstName":"Huichuan","middleName":"","lastName":"Fan","suffix":""},{"id":529265871,"identity":"bb3b0ccd-d063-4e1a-90de-d591eee10ef2","order_by":10,"name":"Hongfei Wu","email":"","orcid":"","institution":"School of Physical Science and Technology, ShanghaiTech University","correspondingAuthor":false,"prefix":"","firstName":"Hongfei","middleName":"","lastName":"Wu","suffix":""},{"id":529265872,"identity":"b87f1367-7d7d-4973-b896-1d29f8ebbcbe","order_by":11,"name":"Zhiyuan Zhou","email":"","orcid":"","institution":"School of physics, Donghua University","correspondingAuthor":false,"prefix":"","firstName":"Zhiyuan","middleName":"","lastName":"Zhou","suffix":""},{"id":529265873,"identity":"3f70d066-b857-419b-a85d-4759a81f2dfb","order_by":12,"name":"Lei Yang","email":"","orcid":"","institution":"School of Microelectronics, Shanghai University","correspondingAuthor":false,"prefix":"","firstName":"Lei","middleName":"","lastName":"Yang","suffix":""},{"id":529265874,"identity":"b5c7092a-90b2-4d72-91a2-4d4a3af55a42","order_by":13,"name":"Xiaoshuang Chen","email":"","orcid":"https://orcid.org/0000-0003-0131-9454","institution":"Shanghai Institute of Technical Physics, Chinese Academy of Sciences","correspondingAuthor":false,"prefix":"","firstName":"Xiaoshuang","middleName":"","lastName":"Chen","suffix":""},{"id":529265875,"identity":"e2beee1f-7f99-411b-a10e-8174024c5c1b","order_by":14,"name":"Hailong Qiu","email":"","orcid":"","institution":"State Key Laboratory of Crystal Materials, Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, Tianjin University of Technology Tianjin","correspondingAuthor":false,"prefix":"","firstName":"Hailong","middleName":"","lastName":"Qiu","suffix":""}],"badges":[],"createdAt":"2025-10-09 04:00:25","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-7812732/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7812732/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":94057744,"identity":"8b189734-583a-47e0-9e10-ca73f59e4042","added_by":"auto","created_at":"2025-10-22 05:09:46","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"acdc-reference","size":2037220,"visible":true,"origin":"","legend":"","description":"","filename":"2.SemimetalenabledRectennaforSubTHzWirelessEnergyHarvestingandWavemixing.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7812732/v1/364a5ddb5cd642bb36438c47.pdf"},{"id":94057742,"identity":"768e036e-157e-45e3-a3a6-7119969ef7d5","added_by":"auto","created_at":"2025-10-22 05:09:46","extension":"json","order_by":1,"title":"","display":"","copyAsset":false,"role":"acdc-reference","size":15358,"visible":true,"origin":"","legend":"","description":"","filename":"LSA20252467.json","url":"https://assets-eu.researchsquare.com/files/rs-7812732/v1/1aca7c7a054875885c15b506.json"},{"id":94057745,"identity":"8dbe1443-fd81-4894-9ebf-ed61691b64e2","added_by":"auto","created_at":"2025-10-22 05:09:46","extension":"docx","order_by":2,"title":"","display":"","copyAsset":false,"role":"acdc-reference","size":1721413,"visible":true,"origin":"","legend":"","description":"","filename":"3.SupplementaryInformation.docx","url":"https://assets-eu.researchsquare.com/files/rs-7812732/v1/865c71bad21d0e612ef1c199.docx"},{"id":97148699,"identity":"6d1eaf80-f26a-428b-9524-60eb449016d3","added_by":"auto","created_at":"2025-12-01 10:19:21","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1382909,"visible":true,"origin":"","legend":"Article File","description":"","filename":"2.SemimetalenabledRectennaforSubTHzWirelessEnergyHarvestingandWavemixing.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7812732/v1_covered_b2f4be22-c954-41d8-96fe-6aa0a73cdca1.pdf"},{"id":94057743,"identity":"96449113-4219-4f1f-aadc-efd8120b7222","added_by":"auto","created_at":"2025-10-22 05:09:46","extension":"docx","order_by":1,"title":"","display":"","copyAsset":false,"role":"supplement","size":1721413,"visible":true,"origin":"","legend":"Semimetal-enabled Rectenna for Sub-THz Wireless Energy Harvesting and Wave-mixing","description":"","filename":"3.SupplementaryInformation.docx","url":"https://assets-eu.researchsquare.com/files/rs-7812732/v1/88dcf64125aafacc319112d7.docx"}],"financialInterests":"There is no conflict of interest","formattedTitle":"Semimetal-enabled Rectenna for Sub-THz Wireless Energy Harvesting and Wave-mixing","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"
[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-7812732/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7812732/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"Topological semimetals, due to their distinctive band structures and topological protection characteristics, show up high mobility and peculiar transport properties, enabling significant nonlinear effects for the efficient technical exploitation at milllimeter-wave/terahertz (THz) range. Here, a layered topological semimetal β-PdBi2 was synthesized via the melt-growth technique, and subsequently integrated with graphene to form an always-on Dirac source (DS) rectenna in terms of van-der Waals integration, leveraging over the unique electronic and mechanical properties of topological semimetals, as well as the efficient thermionic emission without Fermi-level pinning. The rectenna demonstrates exceptional performance metrics across a frequency range from 0.02 to 0.32 THz, in terms of responsivity as high as 805 V/W, fast response time of 163 ns and a noise equivalent power (NEP) as low as 1.03×10⁻11 W/Hz1/2 even at zero-bias, underscores its outstanding performance in low-noise environments. Moreover, the rectenna acts also as a sub-THz mixer, realizing frequency-conversion beyond 100 GHz accompanied with tunable intermediate frequency bandwidth exceeds 53 GHz, rival with state-of-art graphene microwave device. Our strategy provides a universal energy-harvesting building block that become increasingly ubiquitous applications extended through millimeter-wave and terahertz, represent an encouraging advance towards semimetal electronics.","manuscriptTitle":"Semimetal-enabled Rectenna for Sub-THz Wireless Energy Harvesting and Wave-mixing","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-10-22 05:09:41","doi":"10.21203/rs.3.rs-7812732/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"
[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"c510d4a4-b143-4c53-bb61-67b6136c6cab","owner":[],"postedDate":"October 22nd, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":56253554,"name":"Physical sciences/Physics/Electronics, photonics and device physics"},{"id":56253555,"name":"Physical sciences/Physics/Electronics, photonics and device physics/Photonic devices"}],"tags":[],"updatedAt":"2025-12-01T10:18:04+00:00","versionOfRecord":[],"versionCreatedAt":"2025-10-22 05:09:41","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7812732","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7812732","identity":"rs-7812732","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}
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