Crystallinity and Defect Reduction in Cs₂AgBiBr₆ : Key Factors for Enhanced Optoelectronic Devices

Crystallinity and Defect Reduction in Cs₂AgBiBr₆ : Key Factors for Enhanced Optoelectronic Devices | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Crystallinity and Defect Reduction in Cs₂AgBiBr₆ : Key Factors for Enhanced Optoelectronic Devices Fahad K. Alshammari, Achref Jebnouni, Mohamed Bouzidi, Sana Ben Khalifa, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-6576935/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Cs₂AgBiBr₆ double perovskites have emerged as promising materials for optoelectronic applications due to their unique structural and electronic properties. This study systematically compares two crystal growth techniques-Single Crystal Growth (SCG) and Seed-assisted Growth (SAG) to evaluate their impact on crystal quality, defect density, and optoelectronic performance. While both methods yield similarly sized crystals, the SAG method produces superior-quality crystals with reduced defects, improved crystallinity, and enhanced structural coherence. Comprehensive characterization using X-ray diffraction (XRD), photoluminescence (PL), time-resolved photoluminescence (TRPL), impedance spectroscopy, and current-voltage (I-V) measurements reveals that SAG-grown crystals exhibit lower lattice strain, fewer trap states, and higher charge carrier mobility. These improvements translate into a 2.5-fold increase in photocurrent response and a significantly lower dark current in photodetectors based on SAG-grown crystals. The results highlight the SAG method as a more effective and reproducible approach for fabricating high-quality Cs2AgBiBr6 single crystals, making them ideal for advanced optoelectronic devices such as photodetectors and light-emitting components. Double perovskites Seed-assisted growth Lattice strain Photodetectors Charge carrier dynamics Non-radiative recombination Full Text Additional Declarations No competing interests reported. Supplementary Files SupportingInformation.pdf Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-6576935","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":458119959,"identity":"4162872d-0d83-4a8d-82fd-766eba4bfe3a","order_by":0,"name":"Fahad K. 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This study systematically compares two crystal growth techniques-Single Crystal Growth (SCG) and Seed-assisted Growth (SAG) to evaluate their impact on crystal quality, defect density, and optoelectronic performance. While both methods yield similarly sized crystals, the SAG method produces superior-quality crystals with reduced defects, improved crystallinity, and enhanced structural coherence. Comprehensive characterization using X-ray diffraction (XRD), photoluminescence (PL), time-resolved photoluminescence (TRPL), impedance spectroscopy, and current-voltage (I-V) measurements reveals that SAG-grown crystals exhibit lower lattice strain, fewer trap states, and higher charge carrier mobility. These improvements translate into a 2.5-fold increase in photocurrent response and a significantly lower dark current in photodetectors based on SAG-grown crystals. 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