Rapid Thermal Processing of Kesterite thin films

In this contribution we present work on rapid thermal annealing of as-electrodeposited thin films of Cu2ZnSnS4. The treatment was carried out in cold wall tubular reactor in dynamic conditions with variations of temperature, speed and time of the specific elements of the process. The effect of annealing was investigated by X-ray diffractometry, Raman scattering and Scanning Electron Microscopy (SEM). The phase composition of the films in dependence on conditions of treatment was analysed and have been shown that in slow and prolonged high-temperature process the low temperature binaries react completely and only Kesterite and ZnS is left. In addition, structural investigations by XRD have shown gradual decrease of crystallite sizes when the temperature level and duration of the high-temperature segment increases and respectively increase in the strain, due to formation of the phases in non-equilibrium conditions. In opposite, when the speed of dynamic segments in the process decreases the both crystallite size and strain of the Kesterite decreases non-monotonically. The grain sizes of Kesterite, presented by SEM investigations, have shown increase when the temperature and the duration increase, respectively the speed decreases with exemption at higher temperature near 750 C. The set of experiments gave idea by scrupulous analysis of Raman data to elucidate the track for fine manipulating of the defects in the structure of CZTS thin films having in mind the dependences of the ratios of Q = I287/I303 and Q’= I338/(I366+I374) on the process variables.