Electrical and Biosensing Performance Analysis of GaSbP/InP Heterojunction Gate-All-Around Nanowire TFET

Electrical and Biosensing Performance Analysis of GaSbP/InP Heterojunction Gate-All-Around Nanowire TFET | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Electrical and Biosensing Performance Analysis of GaSbP/InP Heterojunction Gate-All-Around Nanowire TFET Ashish Kumar Singh, Swapnil Srivastava, Marella Mangapathi Raju, and 2 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-6355715/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract In this study, a heterojunction gate-all-around nanowire tunnel field-effect transistor (HJ-GAA-NWTFET) with a channel length of 100 nm is designed, attaining a high I ON /I OFF ratio of approximately 10 13 and an exceptionally low off-state current ( I OFF ) of around 10 − 19 A. The RF performance metrics of the proposed HJ-GAA-NWTFET are compared with those of a conventional gate-all-around nanowire tunnel field-effect transistor (GAA-NWTFET), and proposed TFET is showing enhanced performance in terms of electrical and biosensing parameters. The gate-all-around architecture significantly improves I OFF suppression and enhances the I ON /I OFF ratio owing to its robust gate control. Furthermore, the integration of a heterojunction enhances the on-state current ( I ON ), making HJ-GAA-NWTFETs a viable option for sophisticated low-power and high-performance device applications. The proposed dielectric-modulated HJ-GAA-NWTFET based biosensor exhibits a reduced threshold voltage and subthreshold swing (SS), making it suitable for low-power biosensor applications. Heterojunction Gate all Around (GAA) TFETs Nanowire Band to Band Tunneling (BTBT) Dielectric Modulated Biosensor Label-Free Biosensor Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 1. Introduction Power dissipation is a critical problem that the industry is now dealing with. Reduced supply voltage is one approach to deal with this, but it has its own limitations [ 1 – 5 ]. To meet the needs of low power devices, it is high time to look at novel devices that give good subthreshold swing and low off current [ 6 – 8 ]. Due to physical and thermal constraints such as subthreshold swing (SS) less than 60 mV/decade in traditional Metal-Oxide-Semiconductor Field Effect Transistors, Tunnel Field Effect Transistors (TFETs) are a promising candidate for low-power applications at the nanoscale regime [ 9 – 10 ]. TFETs have been extensively used in memory, biosensors, digital circuits, and other low-power applications. Furthermore, FET-based biosensors have lately garnered significant interest from several researchers. Numerous studies on developing technologies, including nano-wire FETs, carbon nano-tube FETs, and ion-sensitive FETs, have been conducted for biomolecule detection. Nonetheless, the enhanced performance of TFET designs has increased the device's sensitivity to biomolecule detection. Charged and neutral biomolecules are detected by TFET-based biosensors with great sensitivity [ 11 ]. Gate All Around (GAA) structure is an effective solution for improving IOFF and ION/IOFF current ratios in TFETs because of its strong gate coupling [ 12 – 14 ]. In addition, heterojunction in TFETs has been adopted to improve On-current [ 15 ]. In this work, Heterojunction junction GAA nanowire TFET (HJ GAA-NWTFET) with a channel length of 100 nm having a high ION/IOFF ratio of order 10 13 and very low off current around 10 − 19 has been designed, and RF parameters are compared for GAA-NWTFET and HJ GAA-NWTFET. HJ GAA-NWTFET has shown better device performance parameters than the GAA-NWTFET. Finally, a biosensor has been designed with the proposed device to show its biosensing-related application. Based on heterojunction, the number of TFETs produced utilizing compound materials from the III-V families has expanded considerably over the last few years [ 16 – 19 ]. III-V materials unlike silicon, are direct-gap semiconductors with a tiny effective mass and a low bandgap [ 20 ]. All these properties improve the tunneling probability, from the TWKB equation, the introduction of additional bandgap engineering possibilities is the most important feature of BTBT boosting [ 21 ]. Silicon is used as the material in the source, drain, and gate regions [ 22 ]. It is unable to produce satisfactory results because of its limitations, because tunneling is necessary for TFETs, III-V components have a straight bandgap [ 23 ]. As a drain and channel material, InP is employed. Because of its tiny band gap, GaSbP is used as source material, it yielded positive results [ 24 ]. This paper looks at the device's performance of a Gate all around Nanowire TFET with both homo and hetero junction depending on DC and Analog/RF parameters. To get a good I ON /I OFF ratio, low off-state current ( I OFF ) and a decent static subthreshold swing, III-V compounds are utilized. The source and channel junctions, which are P-type and N-type doped respectively, form a tunneling area. Compared to silicon, which has an indirect band gap, III-V compounds have a direct band gap. It will be helpful during tunneling and will reduce Sub threshold Swing and suitable dimensions are taken for a specific device with fine meshing. Since the device is three-dimensional, the cylindrical coordinate system is used. Compared to other dimensions, a radius of 10nm was considered since it produces good results. The On current is substantially changed by adjusting merely the radius. Gate all around TFETs are a fantastic choice because they provide excellent electrostatic gate control. Off-current is likewise kept to a minimum. It has a lower SCE, a lower DIBL, and a higher SS. In addition, compared to planar devices, the device geometry gives a greater I ON per unit area. Also, GAA Nanowire TFETs are considered a good choice as an alternative to MOSFETs because of their increase device density and leakage current issues. Heterojunction gate-all-around nanowire tunnel FETs (TFETs) have emerged as promising candidates for low-power nanoelectronics applications. These devices exploit quantum-mechanical band-to-band tunneling to achieve steep subthreshold slopes and high on/off current ratios. InAs-Si nanowire TFETs have demonstrated impressive performance, with on-currents of 2.4 µA/µm, subthreshold slopes of 150 mV/dec, and on/off ratios exceeding 10 6 [ 25 ]. Similarly, GaSb/InAs (Sb) nanowire TFETs have shown even higher drive currents of up to 310 µA/µm at V DS = 0.5 V (Dey et al., 2013). Interestingly, full-quantum 3-D simulations have revealed that quantum confinement effects in small-diameter nanowires can limit the on-current of GaSb/InAs hetero-junction TFETs. However, this limitation can be mitigated by engineering the source region with an InAs/GaSb/InAs quantum well, potentially achieving on/off ratios greater than 10 7 at supply voltages as low as 300 mV [ 26 ]. Contradictorily, when scaling down to 5 nm gate lengths, direct channel tunneling becomes the dominant leakage mechanism for both conventional FETs and TFETs, with Si emerging as the optimal material for suppressing tunnel currents at this scale [ 27 ]. In conclusion, heterojunction gate-all-around nanowire TFETs offer significant advantages in terms of power reduction and performance compared to conventional CMOS technology. The combination of III-V materials like InAs and GaSb with Si enables high on-currents and steep subthreshold slopes, making these devices promising candidates for future low-power integrated circuits [ 28 ]. However, careful consideration of quantum confinement effects and material selection is crucial when scaling these devices to ultra-small dimensions. 2. Proposed Device Structure and Simulation Models The proposed device structure is three-dimensional cylindrical structure. For homo junction (GAA-NWTFET) silicon is used as material for all three regions drain, channel and source. For hetero junction (HJ-GAA-NWTFET) indium phosphide (InP) is used in drain and channel region, gallium antimony phosphide (GaSbP) is used in the source region. The low band gap of GaSbP at the source and channel junction facilitates increased tunneling. The work function of the gate electrode is 4.5 eV. Silvaco TCAD is used to model both homo and hetero junctions. The simulation parameters and dimensions of the Gate-All-Around Nanowire TFET are in Table 1.0 . Table 1.0 Device Dimensions and Parameters of Gate all around Nanowire TFET. Parameters GAA-NWTFET HJGAA-WTFET Source doping concentration (N A ) 1×10 20 cm − 3 1× 10 20 cm − 3 Drain doping concentration (N D ) 1× 10 20 cm − 3 1× 10 20 cm − 3 Nanowire Radius (R) 10 nm 10 nm Channel thickness (t Si ) 20 nm 20 nm Oxide thickness (t ox ) 2 nm 2 nm Gate work-function 4.5 eV 4.5 eV Dielectric constant of SiO 2 3.9 3.9 Gate length (L G ) 100 nm 100 nm Source length (L S ) 50 nm 50 nm Drain length (L D ) 50 nm 50 nm 3. Performance Analysis of the Presented TFETs 3.1 DC Analysis This section analyses characteristics of DC parameters such as ON-state current, OFF-state current, energy band diagram, subthreshold swing (SS), and so on of proposed gate all around nanowire TFET. The energy band diagram is given for both OFF-state and ON-state of proposed gate all around nanowire TFET for both homo and heterojunctions in Figs. 2.0 (a) and 2.0 (b) respectively. Figures 3.0 (a) and (b) compare the transfer characteristics of homojunction and heterojunction-based GAA Nanowire TFETs on a linear and log scale. V DS is set to 0.5 V, and V GS is changed from 0 to 2V to achieve the transfer characteristics. It is evident that the current HJ-GAA-NWTFET is larger than GAA-NWTFET because the band gap at the source and channel intersection is less, allowing for more tunneling in the heterojunction. As a result, the current rises as well. Figure 4.0 depicts the electric field along the device's length. It is evident that the electric field is higher in HJ GAA-NWTFET than GAA-NWTFET at source and channel interface. At the source and channel intersection, the electric field is sufficiently higher, because there are unoccupied states in the conduction band, electrons will be able to travel from the valance band to the conduction band [ 29 ], therefore tunneling current is also increases. Because of band gap engineering, the steepness of energy bands as well as the electric field increases, the peak of HJ GAA-NWTFET is higher than GAA-NWTFET. Heterojunction (InP/GaSbP) based GAA nanowire TFET shows better DC performance than homojunction(silicon) based GAA nanowire TFET in terms of higher I ON , lower I OFF , low static subthreshold slope ( SS ) and higher I ON/ I OFF ratio. Table 2.0 is the Summary of DC parameters of heterojunction and homojunction based proposed GAA Nanowire TFET. Table 2.0 Summary of DC parameters of heterojunction and homojunction based on GAA nanowire TFET. Parameters Homojunction GAA nanowire TFET Heterojunction GAA nanowire TFET I ON (A) 4 × 10 − 6 8× 10 − 6 I OFF (A) 1 × 10 − 16 1 × 10 − 19 I ON /I OFF 4 × 10 10 8 × 10 13 Static SS (mV/decade) 74 32 3.2 Analog/RF The relationship between the device's gate voltage and drain current is called transconductance ( g m ), it specifies how well the device can convert input gate voltage to output drain current [ 30 ]. It also shows the gain of the amplifier [ 30 ]. Higher g m value is required to obtain more output drain current for a little change in input gate voltage, i.e., gate voltage can be translated to output drain current more effectively. g m of heterojunction is higher than homojunction-based GAA Nanowire TFET. Tunneling rises because of improved electrostatic control of the gate. As there is a more overlap at source and channel intersection tunneling increases, current increases as a result transconductance also increases. One of the primary communication system disturbances is harmonic distortion. Below are the higher order harmonics [ 30 ]. $${g_{m2}}=\frac{{{\partial ^2}{I_D}}}{{\partial V_{{gs}}^{2}}}$$ 1.0 $${g_{m3}}=\frac{{{\partial ^3}{I_D}}}{{\partial V_{{gs}}^{3}}}$$ 2.0 At a constant gate bias, g m2 is the double derivative of drain current with respect to gate bias, and assuming a constant drain voltage, g m3 is the triple derivative of drain current with gate bias. Harmonic distortion is primarily caused by g m3 . Here heterojunction-based GAA Nanowire TFET has zero crossing earlier than homojunction, so it is better [ 31 ]. Figures 5 (a) and 5 (b) illustrate the plots of transconductance ( g m ) and the third order of transconductance ( g m3 ) in both plots. The HJ-GAA-NWTFET demonstrates greater value at higher V gs levels, suggesting that the proposed NWTFET is more reliable for low power applications and offers enhanced linearity when compared to the GAA-NWTFET. For RF applications, gate capacitances such as gate to drain capacitance ( C gd ) and gate to source capacitance ( C gs ) are critical as shown in Fig. 6 (a). Capacitance affects switching speed in integrated circuits. However, the parasitic capacitances created at the drain and source terminals w.r.t. gate can be used to calculate the gate capacitance. The parasitic gate capacitance is calculated as follows [ 30 ]: $${C_{gg}}={C_{gs}}+{C_{gd}}$$ 3.0 The unity current gain cut-off frequency ( f T ) is an important factor in GAA nanowire TFET devices' high frequency performance as shown in Fig. 6 (b). The intrinsic delay of the transistor is reduced as the cut-off frequency rises making it a first-order figure of merit for frequency response.it is denoted by expression given in 4.0. $${f_T}=\frac{{{g_m}}}{{2\pi ({C_{gs}}+{C_{gd}})}}=\frac{{{g_m}}}{{2\pi ({C_{gg}})}}$$ 4.0 According to Eq. ( 3.0 ), The device's total gate capacitance ( C gg ) and transconductance ( g m ) have the biggest influence on the unity gain cut-off frequency's performance. Hetero junction-based GAA Nanowire TFET has better performance than homo junction. Device efficiency, also known as the transconductance generation factor (TGF), is the ratio of transconductance to dc current. It refers to how well the drain current is used to obtain the desired transconductance as shown in Fig. 7 . It measures device performance in terms of speed and energy efficiency for digital circuit applications. It indicates the device's operating zone. Device efficiency (TGF) is given by formula in Eq. 5.0 . $$TGF=\frac{{{g_m}}}{{{I_D}}}$$ 5.0 It is evident that the TGF of heterojunction GAA NWTFET is higher than homojunction GAA NWTFET, because Eq. ( 5.0 ) shows its dependence on g m and as we have seen previously heterojunction GAA NWTFET has higher g m than homojunction GAA NWTFET. The transconductance frequency product (TFP), is defined as the product of device efficiency (TGF) and cut-off frequency, is a significant metric for high-frequency applications as shown in Fig. 8 . It is calculated using the Eq. ( 6.0 ) formula. $$TFP=\left( {\frac{{{g_m}}}{{{I_D}}}} \right) \times {f_T}$$ 6.0 The TFP represents a trade-off between bandwidth and power consumption for moderate to high-speed operation. From Eq. ( 6.0 ), it is evident that TFP is again depending on transconductance g m , obviously heterojunction has more g m than homojunction, So, heterojunction yields better results. Heterojunction GAA nanowire TFET has better efficiency than homo junction GAA nanowire TFET. This implies better performance of devices in terms of power saving and faster operation. A higher TFP value also indicates good linearity of the device. 3.3 Biosensing Analysis Biosensors using TFET technology have revolutionized the area [ 31 ] and the positioning of biomolecules in TFET-based biosensors is critical and by analyzing some electrical parameters, presence of biomolecules can be identified [ 32 ]. TFET-based biosensors are only sensitive when biomolecules accumulate at the tunnel junction, instead of planar TFETs, greatly scaled three-dimensional devices are used to produce TFET-based biosensors will be more viable than using FET-based biosensors [ 33 ]. GAA-NW devices feature a full-enclosed gate structure, as a result, the gate area of the GAA-NWTFET is more significant than that of other 2D device with the same footprint, providing for superior gate control [ 26 ]. The GAA-NW structure effectively reduces short channel effects and improves the sensitivity of the biosensor [ 34 ]. The proposed hetero junction gate all around nanowire TFET (HJ-GAA-NWTFET) biosensor is depicted in 3D schematic form in Fig. 9 . The suggested HJ-GAA-NWTFET biosensor's 2D cross-sectional view, shown in Fig. 9 , provides an insight into the proposed biosensor's spatial arrangement. The device’s diementinal parameters and their values are listed in table 3. Table 3.0 Design specification for the proposed device Parameters HJ-GAA-NWTFET Source doping concentration (N A ) 1 ×10 20 cm − 3 Drain doping concentration (N D ) 1 ×10 20 cm − 3 Channel doping concentration (N C ) 1×10 16 cm − 3 Nanowire Radius (R) 10 nm Channel thickness (t Si ) 20 nm Oxide thickness (t ox ) 4 nm Gate work-function 4.5 eV Dielectric constant of HfO 2 25 Dielectric constant of biomolecules k = 1 to k = 11 Gate length (L G ) 100 nm Source length (L S ) 50 nm Drain length (L D ) 50 nm A 4nm thick layer of HfO 2 is kept between gate electrode and nanowire. ZrO 2 is taken as extra dielectric and placed on either side of HfO 2 in such a way that it lies under gate electrode. This is used to vary the dielectric constant value. To study device performance under all conditions, the dielectric constant of Biomolecules is adjusted from k = 1 to k = 11. Adding air to the chamber with a dielectric constant of ( k = 1) provides a benchmark reference value for assessing sensitivity. Before analysing the HJ-GAA-NWTFET biosensor, few assumptions have been made, including that the gap under the gate on either side of HfO 2 is filled with biomolecules. The immobilized biomolecules under the gate have dielectric constants ranging from k = 1 to k = 11.The energy band bending occurs as the dielectric constant of the biomolecule varies. Figure 10 depicts the alteration of the HJ-GAA-NWTFET biosensor's energy band diagram in response to changes in the biomolecule's dielectric constant. At the source and channel intersection, there are obvious differences. Tunnelling happens here, and variations in bands occur due to changes in the dielectric constant of biomolecules. Figure 11 shows the typical drain current for changes in biomolecules' dielectric constant. For biomolecules with dielectric constant values ranging from 1 to 11, the transfer characteristics of the HJ-GAA-NWTFET biosensor are presented. We have used a substance with a dielectric constant of 1 to mimic the absence of the biomolecule (air) as a standard for detecting the presence of the biomolecule and assessing the sensitivity of the device. Band gap engineering is used by biomolecules with various dielectric constants at the source and channel intersection, resulting in variations in drain current. Figure 12 (a) depicts the potential variation of the HJ-GAA-NWTFET biosensor for various biomolecule dielectric constant values. The increase in the biomolecule's dielectric constant causes a potential change in the nanowire semiconductor, and as a result, the band begins to shift its position. The inter-trapped charge carriers around the junction are influenced by increasing the dielectric constant of biomolecules, resulting in a shift in potential. Different dielectric constant values for the selected biomolecules, the horizontal electric field along the device is illustrated in Fig. 12 (a). Changes in the dielectric constant of biomolecules leads to change in electric field also. The inclusion of biomolecules causes a change in steepness due to band gap engineering at junction of source and channel as a result, the electric field is shifting. One of the most significant aspects of a biosensor is its sensitivity. Biosensors made of nanoparticles have higher sensitivity than bulk devices [ 35 ]. Because the subthreshold area consumes less power and the transfer characteristics are more sensitive, the transconductance-to-current ratio ( g m /I ds ), which has traditionally been used as an analogue performance indicator can be used as a sensing metric because it is simple to assess a change in its value in the subthreshold area due to the presence of biomolecules in the cavity, and at a low power level [ 36 ]. Transfer characteristics is highest below threshold compared to above threshold operation so it is necessary to find a sensing metric that can identify biomolecules at reduced power levels. we have used g m /I ds as a sensing parameter for dielectric modulated TFET-based biosensors in this work [ 27 ]. g m /I ds improves when k increases due to the accumulation of biomolecules in the cavity, resulting in greater values at lower Ids values. This indicates Current-voltage characteristics shifting to lower (absolute) gate voltages. The presence of biomolecules causes an increase in gm/Ids max, which indicates a change in S-swing (as g m /I ds = ln(10)/S-swing). Table 3 shows the sensitivity comparison of the proposed biosensor to other published works. The proposed biosensor, shows better sensitivity as compared to other three before published works, as shown in Table 3 . Table 4 Comparative table of sensitivity parameters of different biosensors. References Year Sensitivity Proposed work (HJ-GAA-NWTFET) 2025 10 8 Reddy et al. [ 37 ] 2021 10 6 Abdi et al. [ 38 ] 2015 10 6 Narang et al. [ 25 ] 2015 10 6 4. Conclusion For low power or low energy electronic circuits with a supply voltage V DD less than 0.5V, TFET may be a viable alternative to traditional MOSFETs. So TFETs have lower static energy dissipation than MOSFETs, even if their ONN-currents are the same. TFET can then give the same ONN-current as V DD at a lower supply voltage. As a result, TFET will lower dynamic energy dissipation (as dynamic energy is directly proportional to V DD and V DD 2 ). We have seen in our study that heterojunction gate all around nanowire TFET is better in DC, analog/RF, linearity and biosensing performance compared to homo junction gate all around nanowire TFET. This work discusses the application of HJ-GAA-NWTFET based biosensors for the detection of various biomolecules ( k = 1 to k = 11). Therefore, the proposed HJ-GAA-NWTFET is a more suitable device for low power VLSI circuit design for biosensing applications. Declarations Author’s Contributions: All the authors contributed separately to the design and investigation, conceptualization, and analysis of this work. Author Ashish Kumar Singh prepared the first draft of the manuscript after performing the simulation study and validation. Authors Swapnil Srivastava and Marella Mangapathi Raju have edited the manuscript after data analysis and validation. Author Manas Ranjan Tripathy provided some fruitful discussions and comments regarding the content of the work and author Satyabrata Jit commented on the manuscript and supervised the entire work. All the authors read and approved the final version of the manuscript Data availability: Not Applicable Code Availability: Not Applicable Declarations Consent to Participate All the authors contributed voluntarily to this work. Consent for Publication In accordance with the copyright transfer or open access rules. Ethics Approval: Not Applicable. Funding: Not Applicable References R. Hossain, M. Zheng and A. Albicki, & quot; Reducing power dissipation in CMOS circuits by signal probability-based transistor reordering, & quot; in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems , vol. 15, no. 3, pp. 361-368, 1996, doi: 10.1109/43.489107. A. K. Yadav, K. Upadhyay, P. 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Scr . 99 085978, DOI 10.1088/1402-4896/ad62a4. A. K. Singh, R. Kumar and S. Jit, “Dielectric modulated TFET on SELBOX substrate as a label-free biosensor applications: analytical modeling study and sensitivity analysis,” 2024 Phys. Scr . 99 105413, DOI 10.1088/1402-4896/ad7b8b. Singh, A. K., Kumar, R., Maity, H., Singh, P., & Singh, S. (2024). Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 37(4), e3274. https://doi.org/10.1002/jnm.3274. Silvaco, Inc, Atlas User’s Manual, Device simulation software, Santa Clara: Silvaco, Inc, October 2004. Turner, Anthony P F. “Biosensors: sense and sensibility.” Chemical Society reviews 42 8 (2013): 3184-96 . K.I. Chen, B.R. Li, Y.T. Chen, Silicon nanowire feld-efect transistor-based biosensors for biomedical diagnosis and cellular recording investigation. Im H, Huang XJ, Gu B, Choi YK. A dielectric-modulated field-effect transistor for biosensing. Nat Nanotechnol. 2007 Jul;2(7):430-4. doi: 10.1038/nnano.2007.180. Epub 2007 Jun 24. PMID: 18654328. K. Martens et al., "BioFET Technology: Aggressively Scaled pMOS FinFET as Biosensor," 2019 IEEE International Electron Devices Meeting (IEDM), 2019, pp. 18.6.1-18.6.4, doi: 10.1109/IEDM19573.2019.8993589. N. N. Reddy and D. K. Panda, ‘Nanowire gate all around-TFET-based biosensor by considering ambipolar transport’, Applied Physics A, vol. 127, no. 9, p. 682, Aug. 2021. D. B. Abdi and M. J. Kumar, ‘Dielectric modulated overlapping gate-on-drain tunnel-FET as a label-free biosensor’, Superlattices and Microstructures, vol. 86, pp. 198–202, 2015. R. Narang, M. Saxena, M. Gupta M, “Ambipolar Behaviour of Tunnel Field Effect Transistor (TFET) as an Advantage forBiosensing Applications, pp 171–172, 2014. https://link.springer.com/book/10.1007/978-3-319-03002-9 Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-6355715","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":457187449,"identity":"f7a808fb-482b-4f6e-8cb7-ed38ae27b2ca","order_by":0,"name":"Ashish Kumar Singh","email":"data:image/png;base64,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","orcid":"","institution":"Graphic era (Deemed to be University)","correspondingAuthor":true,"prefix":"","firstName":"Ashish","middleName":"Kumar","lastName":"Singh","suffix":""},{"id":457187451,"identity":"62e0dc37-9aec-4dc6-9356-bfed429f754a","order_by":1,"name":"Swapnil Srivastava","email":"","orcid":"","institution":"Department of Electronics \u0026 Communication Engineering, Meerut Institute of Engineering \u0026 Technology (MIET)","correspondingAuthor":false,"prefix":"","firstName":"Swapnil","middleName":"","lastName":"Srivastava","suffix":""},{"id":457187453,"identity":"c38ba880-6df3-47f8-a7d3-cc0427b97843","order_by":2,"name":"Marella Mangapathi Raju","email":"","orcid":"","institution":"IIT (BHU)","correspondingAuthor":false,"prefix":"","firstName":"Marella","middleName":"Mangapathi","lastName":"Raju","suffix":""},{"id":457187455,"identity":"321ffaf6-a94d-46ba-9dd2-c4732c7befd5","order_by":3,"name":"Satyabrata Jit","email":"","orcid":"","institution":"IIT (BHU)","correspondingAuthor":false,"prefix":"","firstName":"Satyabrata","middleName":"","lastName":"Jit","suffix":""},{"id":457187457,"identity":"72f584ca-3fb2-480f-9c7a-4f89f7da9d33","order_by":4,"name":"Manas Ranjan Tripathy","email":"","orcid":"","institution":"Kalinga Institute of Industrial Technology (KIIT) Deemed to be University","correspondingAuthor":false,"prefix":"","firstName":"Manas","middleName":"Ranjan","lastName":"Tripathy","suffix":""}],"badges":[],"createdAt":"2025-04-01 19:53:01","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-6355715/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-6355715/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":83064859,"identity":"c14bded4-3943-4bf0-80b5-f129517edd9c","added_by":"auto","created_at":"2025-05-19 15:24:59","extension":"png","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":101128,"visible":true,"origin":"","legend":"\u003cp\u003e3D view of homo/heterojunction-based GAA Nanowire TFET structure.\u003c/p\u003e","description":"","filename":"floatimage1.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/33cbf52cdb5ba43a979794fd.png"},{"id":83066896,"identity":"69a1e1fb-173a-498d-9eda-ae467f85b230","added_by":"auto","created_at":"2025-05-19 15:48:59","extension":"png","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":175921,"visible":true,"origin":"","legend":"\u003cp\u003eEnergy band diagram of (a) GAA-NWTFET, and (b) HJ GAA-NWTFET in both on state and Off states.\u0026nbsp;\u003c/p\u003e","description":"","filename":"floatimage2.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/cd9cf09e5f23b93120c84ed7.png"},{"id":83064860,"identity":"fd4602b5-bc68-422c-9327-9b8d40bb3a7f","added_by":"auto","created_at":"2025-05-19 15:24:59","extension":"png","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":161256,"visible":true,"origin":"","legend":"\u003cp\u003eDrain Current comparison of GAA-NWTFET and HJ GAA-NWTFET.\u003c/p\u003e","description":"","filename":"floatimage3.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/27964ee58ee4c46e670d7fd6.png"},{"id":83064864,"identity":"a21a9243-abdb-4d24-adbc-2c74ecc7c88d","added_by":"auto","created_at":"2025-05-19 15:24:59","extension":"png","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":90932,"visible":true,"origin":"","legend":"\u003cp\u003eDrain Current comparison of GAA-NWTFET and HJ GAA-NWTFET.\u003c/p\u003e","description":"","filename":"floatimage4.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/b5ac399d91bcae022439b646.png"},{"id":83064866,"identity":"60e305d1-1fa2-4f03-aa49-6dda87b7b99f","added_by":"auto","created_at":"2025-05-19 15:24:59","extension":"png","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":149659,"visible":true,"origin":"","legend":"\u003cp\u003ePlots of (a) transconductance and, (b) 3\u003csup\u003erd\u003c/sup\u003e order of transconductance of GAA-NWTFET and HJ GAA-NWTFET.\u003c/p\u003e","description":"","filename":"floatimage5.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/82404871013f735a8471b74f.png"},{"id":83065218,"identity":"c567c8e4-c874-4704-8d27-d4b612859da6","added_by":"auto","created_at":"2025-05-19 15:32:59","extension":"png","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":155418,"visible":true,"origin":"","legend":"\u003cp\u003ePlots of (a) total gate capacitance, and (b) Cut-off frequency of GAA-NWTFET and HJ GAA-NWTFET.\u003c/p\u003e","description":"","filename":"floatimage6.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/8548c1b6d7bcd935095f1b82.png"},{"id":83065215,"identity":"432473b8-25bc-4c0d-8238-874398b57a21","added_by":"auto","created_at":"2025-05-19 15:32:59","extension":"png","order_by":7,"title":"Figure 7","display":"","copyAsset":false,"role":"figure","size":129049,"visible":true,"origin":"","legend":"\u003cp\u003ePlots of\u003cstrong\u003e \u003c/strong\u003eTGF of (a) GAA-NWTFET, and (b) HJ GAA-NWTFET.\u003c/p\u003e","description":"","filename":"floatimage7.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/c6953033da33305970e8bdce.png"},{"id":83066898,"identity":"ea7f6a25-b106-4187-b98f-aef42aba7381","added_by":"auto","created_at":"2025-05-19 15:48:59","extension":"png","order_by":8,"title":"Figure 8","display":"","copyAsset":false,"role":"figure","size":84505,"visible":true,"origin":"","legend":"\u003cp\u003eDevice efficiency of Heterojunction and Homojunction Based GAA Nanowire TFET.\u003c/p\u003e","description":"","filename":"floatimage8.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/550af86749bb9f26abe10156.png"},{"id":83067613,"identity":"dc8ceb40-b2ab-4f54-885e-bf27ae8b0661","added_by":"auto","created_at":"2025-05-19 15:56:59","extension":"png","order_by":9,"title":"Figure 9","display":"","copyAsset":false,"role":"figure","size":34368,"visible":true,"origin":"","legend":"\u003cp\u003eHeterojunction based GAA Nanowire TFET biosensor structure in 2D.\u003c/p\u003e","description":"","filename":"floatimage9.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/5c6e3daa64a5d151e0db443f.png"},{"id":83066077,"identity":"5c119780-24bb-4df4-bd92-7e02cf01d2b2","added_by":"auto","created_at":"2025-05-19 15:40:59","extension":"png","order_by":10,"title":"Figure 10","display":"","copyAsset":false,"role":"figure","size":142582,"visible":true,"origin":"","legend":"\u003cp\u003eHJ GAA-NWTFET-based biosensor energy band diagram with dielectric values \u003cem\u003ek\u003c/em\u003e=1 to 11 for V\u003csub\u003eDS\u003c/sub\u003e=0.5\u003c/p\u003e","description":"","filename":"floatimage10.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/fd90b8effa20c2c3dbc6ff34.png"},{"id":83065225,"identity":"cc8eaa4b-1742-4039-8d04-5d127946d1ca","added_by":"auto","created_at":"2025-05-19 15:32:59","extension":"png","order_by":11,"title":"Figure 11","display":"","copyAsset":false,"role":"figure","size":158048,"visible":true,"origin":"","legend":"\u003cp\u003eHJ GAA-TFET-based biosensor transfer characteristics (a) Linear, (b) logarithmic\u003c/p\u003e","description":"","filename":"floatimage11.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/e3d3a02691df8c2e24934b20.png"},{"id":83064892,"identity":"27edea19-1153-4b8f-a2d5-d33031969e44","added_by":"auto","created_at":"2025-05-19 15:25:00","extension":"png","order_by":12,"title":"Figure 12","display":"","copyAsset":false,"role":"figure","size":142347,"visible":true,"origin":"","legend":"\u003cp\u003e(a) Potential, and (b) electric field variation over the device length due to biomolecules with variable dielectric constants.\u003c/p\u003e","description":"","filename":"floatimage12.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/34d9e3fdf85565b8bae7009b.png"},{"id":83066080,"identity":"4c414aab-931b-4df0-b678-3bbad183b6fe","added_by":"auto","created_at":"2025-05-19 15:40:59","extension":"png","order_by":13,"title":"Figure 13","display":"","copyAsset":false,"role":"figure","size":83750,"visible":true,"origin":"","legend":"\u003cp\u003eTransconductance to current ratio (\u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e\u003cem\u003e/I\u003c/em\u003e\u003csub\u003e\u003cem\u003eds\u003c/em\u003e\u003c/sub\u003e) with applied front gate voltage for various values of dielectric constants.\u003cem\u003e\u0026nbsp;\u003c/em\u003e\u003c/p\u003e","description":"","filename":"floatimage13.png","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/5ed9687e607ba14d315d8c98.png"},{"id":94473679,"identity":"79d1e4a4-6917-4eac-9564-5c85c8004e4b","added_by":"auto","created_at":"2025-10-27 15:45:12","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":2312082,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-6355715/v1/59c3df72-e8ca-471e-93af-55128ffa0f84.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Electrical and Biosensing Performance Analysis of GaSbP/InP Heterojunction Gate-All-Around Nanowire TFET","fulltext":[{"header":"1. Introduction","content":"\u003cp\u003ePower dissipation is a critical problem that the industry is now dealing with. Reduced supply voltage is one approach to deal with this, but it has its own limitations [\u003cspan additionalcitationids=\"CR2 CR3 CR4\" citationid=\"CR1\" class=\"CitationRef\"\u003e1\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR5\" class=\"CitationRef\"\u003e5\u003c/span\u003e]. To meet the needs of low power devices, it is high time to look at novel devices that give good subthreshold swing and low off current [\u003cspan additionalcitationids=\"CR7\" citationid=\"CR6\" class=\"CitationRef\"\u003e6\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR8\" class=\"CitationRef\"\u003e8\u003c/span\u003e]. Due to physical and thermal constraints such as subthreshold swing (SS) less than 60 mV/decade in traditional Metal-Oxide-Semiconductor Field Effect Transistors, Tunnel Field Effect Transistors (TFETs) are a promising candidate for low-power applications at the nanoscale regime [\u003cspan citationid=\"CR9\" class=\"CitationRef\"\u003e9\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR10\" class=\"CitationRef\"\u003e10\u003c/span\u003e]. TFETs have been extensively used in memory, biosensors, digital circuits, and other low-power applications. Furthermore, FET-based biosensors have lately garnered significant interest from several researchers. Numerous studies on developing technologies, including nano-wire FETs, carbon nano-tube FETs, and ion-sensitive FETs, have been conducted for biomolecule detection. Nonetheless, the enhanced performance of TFET designs has increased the device's sensitivity to biomolecule detection. Charged and neutral biomolecules are detected by TFET-based biosensors with great sensitivity [\u003cspan citationid=\"CR11\" class=\"CitationRef\"\u003e11\u003c/span\u003e].\u003c/p\u003e \u003cp\u003eGate All Around (GAA) structure is an effective solution for improving \u003cem\u003eIOFF\u003c/em\u003e and \u003cem\u003eION/IOFF\u003c/em\u003e current ratios in TFETs because of its strong gate coupling [\u003cspan additionalcitationids=\"CR13\" citationid=\"CR12\" class=\"CitationRef\"\u003e12\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR14\" class=\"CitationRef\"\u003e14\u003c/span\u003e]. In addition, heterojunction in TFETs has been adopted to improve On-current [\u003cspan citationid=\"CR15\" class=\"CitationRef\"\u003e15\u003c/span\u003e]. In this work, Heterojunction junction GAA nanowire TFET (HJ GAA-NWTFET) with a channel length of 100 nm having a high \u003cem\u003eION/IOFF\u003c/em\u003e ratio of order 10\u003csup\u003e13\u003c/sup\u003e and very low off current around 10\u003csup\u003e\u0026minus;\u0026thinsp;19\u003c/sup\u003e has been designed, and RF parameters are compared for GAA-NWTFET and HJ GAA-NWTFET. HJ GAA-NWTFET has shown better device performance parameters than the GAA-NWTFET. Finally, a biosensor has been designed with the proposed device to show its biosensing-related application. Based on heterojunction, the number of TFETs produced utilizing compound materials from the III-V families has expanded considerably over the last few years [\u003cspan additionalcitationids=\"CR17 CR18\" citationid=\"CR16\" class=\"CitationRef\"\u003e16\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR19\" class=\"CitationRef\"\u003e19\u003c/span\u003e]. III-V materials unlike silicon, are direct-gap semiconductors with a tiny effective mass and a low bandgap [\u003cspan citationid=\"CR20\" class=\"CitationRef\"\u003e20\u003c/span\u003e]. All these properties improve the tunneling probability, from the TWKB equation, the introduction of additional bandgap engineering possibilities is the most important feature of BTBT boosting [\u003cspan citationid=\"CR21\" class=\"CitationRef\"\u003e21\u003c/span\u003e]. Silicon is used as the material in the source, drain, and gate regions [\u003cspan citationid=\"CR22\" class=\"CitationRef\"\u003e22\u003c/span\u003e]. It is unable to produce satisfactory results because of its limitations, because tunneling is necessary for TFETs, III-V components have a straight bandgap [\u003cspan citationid=\"CR23\" class=\"CitationRef\"\u003e23\u003c/span\u003e]. As a drain and channel material, InP is employed. Because of its tiny band gap, GaSbP is used as source material, it yielded positive results [\u003cspan citationid=\"CR24\" class=\"CitationRef\"\u003e24\u003c/span\u003e]. This paper looks at the device's performance of a Gate all around Nanowire TFET with both homo and hetero junction depending on DC and Analog/RF parameters. To get a good \u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eON\u003c/em\u003e\u003c/sub\u003e\u003cem\u003e/I\u003c/em\u003e\u003csub\u003e\u003cem\u003eOFF\u003c/em\u003e\u003c/sub\u003e ratio, low off-state current (\u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eOFF\u003c/em\u003e\u003c/sub\u003e) and a decent static subthreshold swing, III-V compounds are utilized. The source and channel junctions, which are P-type and N-type doped respectively, form a tunneling area. Compared to silicon, which has an indirect band gap, III-V compounds have a direct band gap. It will be helpful during tunneling and will reduce Sub threshold Swing and suitable dimensions are taken for a specific device with fine meshing. Since the device is three-dimensional, the cylindrical coordinate system is used. Compared to other dimensions, a radius of 10nm was considered since it produces good results. The On current is substantially changed by adjusting merely the radius. Gate all around TFETs are a fantastic choice because they provide excellent electrostatic gate control. Off-current is likewise kept to a minimum. It has a lower SCE, a lower DIBL, and a higher SS. In addition, compared to planar devices, the device geometry gives a greater I\u003csub\u003eON\u003c/sub\u003e per unit area. Also, GAA Nanowire TFETs are considered a good choice as an alternative to MOSFETs because of their increase device density and leakage current issues.\u003c/p\u003e \u003cp\u003eHeterojunction gate-all-around nanowire tunnel FETs (TFETs) have emerged as promising candidates for low-power nanoelectronics applications. These devices exploit quantum-mechanical band-to-band tunneling to achieve steep subthreshold slopes and high on/off current ratios. InAs-Si nanowire TFETs have demonstrated impressive performance, with on-currents of 2.4 \u0026micro;A/\u0026micro;m, subthreshold slopes of 150 mV/dec, and on/off ratios exceeding 10\u003csup\u003e6\u003c/sup\u003e [\u003cspan citationid=\"CR25\" class=\"CitationRef\"\u003e25\u003c/span\u003e]. Similarly, GaSb/InAs (Sb) nanowire TFETs have shown even higher drive currents of up to 310 \u0026micro;A/\u0026micro;m at V\u003csub\u003eDS\u003c/sub\u003e = 0.5 V (Dey et al., 2013). Interestingly, full-quantum 3-D simulations have revealed that quantum confinement effects in small-diameter nanowires can limit the on-current of GaSb/InAs hetero-junction TFETs. However, this limitation can be mitigated by engineering the source region with an InAs/GaSb/InAs quantum well, potentially achieving on/off ratios greater than 10\u003csup\u003e7\u003c/sup\u003e at supply voltages as low as 300 mV [\u003cspan citationid=\"CR26\" class=\"CitationRef\"\u003e26\u003c/span\u003e]. Contradictorily, when scaling down to 5 nm gate lengths, direct channel tunneling becomes the dominant leakage mechanism for both conventional FETs and TFETs, with Si emerging as the optimal material for suppressing tunnel currents at this scale [\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e]. In conclusion, heterojunction gate-all-around nanowire TFETs offer significant advantages in terms of power reduction and performance compared to conventional CMOS technology. The combination of III-V materials like InAs and GaSb with Si enables high on-currents and steep subthreshold slopes, making these devices promising candidates for future low-power integrated circuits [\u003cspan citationid=\"CR28\" class=\"CitationRef\"\u003e28\u003c/span\u003e]. However, careful consideration of quantum confinement effects and material selection is crucial when scaling these devices to ultra-small dimensions.\u003c/p\u003e"},{"header":"2. Proposed Device Structure and Simulation Models","content":"\u003cp\u003eThe proposed device structure is three-dimensional cylindrical structure. For homo junction (GAA-NWTFET) silicon is used as material for all three regions drain, channel and source. For hetero junction (HJ-GAA-NWTFET) indium phosphide (InP) is used in drain and channel region, gallium antimony phosphide (GaSbP) is used in the source region. The low band gap of GaSbP at the source and channel junction facilitates increased tunneling. The work function of the gate electrode is 4.5 eV. Silvaco TCAD is used to model both homo and hetero junctions. The simulation parameters and dimensions of the Gate-All-Around Nanowire TFET are in Table \u003cspan refid=\"Tab1\" class=\"InternalRef\"\u003e1.0\u003c/span\u003e.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003e \u003cdiv class=\"gridtable\"\u003e\u003ctable float=\"Yes\" id=\"Tab1\" border=\"1\"\u003e \u003ccaption language=\"En\"\u003e \u003cdiv class=\"CaptionNumber\"\u003eTable 1.0\u003c/div\u003e \u003cdiv class=\"CaptionContent\"\u003e \u003cp\u003eDevice Dimensions and Parameters of Gate all around Nanowire TFET.\u003c/p\u003e \u003c/div\u003e \u003c/caption\u003e \u003ccolgroup cols=\"3\"\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c1\" colnum=\"1\"\u003e\u003c/div\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c2\" colnum=\"2\"\u003e\u003c/div\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c3\" colnum=\"3\"\u003e\u003c/div\u003e \u003cthead\u003e \u003ctr\u003e \u003cth align=\"left\" colname=\"c1\"\u003e \u003cp\u003eParameters\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c2\"\u003e \u003cp\u003eGAA-NWTFET\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c3\"\u003e \u003cp\u003eHJGAA-WTFET\u003c/p\u003e \u003c/th\u003e \u003c/tr\u003e \u003c/thead\u003e \u003ctbody\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eSource doping concentration (N\u003csub\u003eA\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e1\u0026times;10\u003csup\u003e20\u003c/sup\u003e cm\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e1\u0026times; 10\u003csup\u003e20\u003c/sup\u003e cm\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eDrain doping concentration (N\u003csub\u003eD\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e1\u0026times; 10\u003csup\u003e20\u003c/sup\u003e cm\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e1\u0026times; 10\u003csup\u003e20\u003c/sup\u003e cm\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eNanowire Radius (R)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e10 nm\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e10 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eChannel thickness (t\u003csub\u003eSi\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e20 nm\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e20 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eOxide thickness (t\u003csub\u003eox\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e2 nm\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e2 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eGate work-function\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e4.5 eV\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e4.5 eV\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eDielectric constant of SiO\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e3.9\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e3.9\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eGate length (L\u003csub\u003eG\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e100 nm\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e100 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eSource length (L\u003csub\u003eS\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e50 nm\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e50 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eDrain length (L\u003csub\u003eD\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e50 nm\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e50 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003c/tbody\u003e \u003c/colgroup\u003e \u003c/table\u003e\u003c/div\u003e \u003c/p\u003e"},{"header":"3. Performance Analysis of the Presented TFETs","content":"\u003cdiv id=\"Sec4\" class=\"Section2\"\u003e \u003ch2\u003e3.1 DC Analysis\u003c/h2\u003e \u003cp\u003eThis section analyses characteristics of DC parameters such as ON-state current, OFF-state current, energy band diagram, subthreshold swing (SS), and so on of proposed gate all around nanowire TFET. The energy band diagram is given for both OFF-state and ON-state of proposed gate all around nanowire TFET for both homo and heterojunctions in Figs.\u0026nbsp;2.0 (a) and 2.0 (b) respectively. Figures\u0026nbsp;3.0 (a) and (b) compare the transfer characteristics of homojunction and heterojunction-based GAA Nanowire TFETs on a linear and log scale. V\u003csub\u003eDS\u003c/sub\u003e is set to 0.5 V, and V\u003csub\u003eGS\u003c/sub\u003e is changed from 0 to 2V to achieve the transfer characteristics. It is evident that the current HJ-GAA-NWTFET is larger than GAA-NWTFET because the band gap at the source and channel intersection is less, allowing for more tunneling in the heterojunction. As a result, the current rises as well.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eFigure\u0026nbsp;4.0 depicts the electric field along the device's length. It is evident that the electric field is higher in HJ GAA-NWTFET than GAA-NWTFET at source and channel interface. At the source and channel intersection, the electric field is sufficiently higher, because there are unoccupied states in the conduction band, electrons will be able to travel from the valance band to the conduction band [\u003cspan citationid=\"CR29\" class=\"CitationRef\"\u003e29\u003c/span\u003e], therefore tunneling current is also increases. Because of band gap engineering, the steepness of energy bands as well as the electric field increases, the peak of HJ GAA-NWTFET is higher than GAA-NWTFET.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eHeterojunction (InP/GaSbP) based GAA nanowire TFET shows better DC performance than homojunction(silicon) based GAA nanowire TFET in terms of higher \u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eON\u003c/em\u003e\u003c/sub\u003e, lower \u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eOFF\u003c/em\u003e\u003c/sub\u003e, low static subthreshold slope (\u003cem\u003eSS\u003c/em\u003e) and higher \u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eON/\u003c/em\u003e\u003c/sub\u003e\u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eOFF\u003c/em\u003e\u003c/sub\u003e ratio. Table\u0026nbsp;\u003cspan refid=\"Tab2\" class=\"InternalRef\"\u003e2.0\u003c/span\u003e is the Summary of DC parameters of heterojunction and homojunction based proposed GAA Nanowire TFET.\u003c/p\u003e \u003cp\u003e \u003cdiv class=\"gridtable\"\u003e\u003ctable float=\"Yes\" id=\"Tab2\" border=\"1\"\u003e \u003ccaption language=\"En\"\u003e \u003cdiv class=\"CaptionNumber\"\u003eTable 2.0\u003c/div\u003e \u003cdiv class=\"CaptionContent\"\u003e \u003cp\u003eSummary of DC parameters of heterojunction and homojunction based on GAA nanowire TFET.\u003c/p\u003e \u003c/div\u003e \u003c/caption\u003e \u003ccolgroup cols=\"3\"\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c1\" colnum=\"1\"\u003e\u003c/div\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c2\" colnum=\"2\"\u003e\u003c/div\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c3\" colnum=\"3\"\u003e\u003c/div\u003e \u003cthead\u003e \u003ctr\u003e \u003cth align=\"left\" colname=\"c1\"\u003e \u003cp\u003eParameters\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c2\"\u003e \u003cp\u003eHomojunction GAA nanowire TFET\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c3\"\u003e \u003cp\u003eHeterojunction GAA nanowire TFET\u003c/p\u003e \u003c/th\u003e \u003c/tr\u003e \u003c/thead\u003e \u003ctbody\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eI\u003csub\u003eON\u003c/sub\u003e (A)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e4 \u0026times; 10\u003csup\u003e\u0026minus;\u0026thinsp;6\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e8\u0026times; 10\u003csup\u003e\u0026minus;\u0026thinsp;6\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eI\u003csub\u003eOFF\u003c/sub\u003e(A)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e1 \u0026times; 10\u003csup\u003e\u0026minus;\u0026thinsp;16\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e1 \u0026times; 10\u003csup\u003e\u0026minus;\u0026thinsp;19\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eI\u003csub\u003eON\u003c/sub\u003e/I\u003csub\u003eOFF\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e4 \u0026times; 10\u003csup\u003e10\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e8 \u0026times; 10\u003csup\u003e13\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eStatic \u003cem\u003eSS\u003c/em\u003e (mV/decade)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e74\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c3\"\u003e \u003cp\u003e32\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003c/tbody\u003e \u003c/colgroup\u003e \u003c/table\u003e\u003c/div\u003e \u003c/p\u003e \u003c/div\u003e \u003cdiv id=\"Sec5\" class=\"Section2\"\u003e \u003ch2\u003e3.2 Analog/RF\u003c/h2\u003e \u003cp\u003eThe relationship between the device's gate voltage and drain current is called transconductance (\u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e), it specifies how well the device can convert input gate voltage to output drain current [\u003cspan citationid=\"CR30\" class=\"CitationRef\"\u003e30\u003c/span\u003e]. It also shows the gain of the amplifier [\u003cspan citationid=\"CR30\" class=\"CitationRef\"\u003e30\u003c/span\u003e]. Higher g\u003csub\u003em\u003c/sub\u003e value is required to obtain more output drain current for a little change in input gate voltage, i.e., gate voltage can be translated to output drain current more effectively. \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e of heterojunction is higher than homojunction-based GAA Nanowire TFET. Tunneling rises because of improved electrostatic control of the gate. As there is a more overlap at source and channel intersection tunneling increases, current increases as a result transconductance also increases. One of the primary communication system disturbances is harmonic distortion. Below are the higher order harmonics [\u003cspan citationid=\"CR30\" class=\"CitationRef\"\u003e30\u003c/span\u003e].\u003cdiv id=\"Equ1\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ1\" name=\"EquationSource\"\u003e\n$${g_{m2}}=\\frac{{{\\partial ^2}{I_D}}}{{\\partial V_{{gs}}^{2}}}$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e1.0\u003c/div\u003e\u003c/div\u003e\u003cdiv id=\"Equ2\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ2\" name=\"EquationSource\"\u003e\n$${g_{m3}}=\\frac{{{\\partial ^3}{I_D}}}{{\\partial V_{{gs}}^{3}}}$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e2.0\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003eAt a constant gate bias, \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em2\u003c/em\u003e\u003c/sub\u003e is the double derivative of drain current with respect to gate bias, and assuming a constant drain voltage, \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em3\u003c/em\u003e\u003c/sub\u003e is the triple derivative of drain current with gate bias. Harmonic distortion is primarily caused by \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em3\u003c/em\u003e\u003c/sub\u003e. Here heterojunction-based GAA Nanowire TFET has zero crossing earlier than homojunction, so it is better [\u003cspan citationid=\"CR31\" class=\"CitationRef\"\u003e31\u003c/span\u003e]. Figures\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003e (a) and 5 (b) illustrate the plots of transconductance (\u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e) and the third order of transconductance (\u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em3\u003c/em\u003e\u003c/sub\u003e) in both plots. The HJ-GAA-NWTFET demonstrates greater value at higher \u003cem\u003eV\u003c/em\u003e\u003csub\u003e\u003cem\u003egs\u003c/em\u003e\u003c/sub\u003e levels, suggesting that the proposed NWTFET is more reliable for low power applications and offers enhanced linearity when compared to the GAA-NWTFET.\u003c/p\u003e \u003cp\u003eFor RF applications, gate capacitances such as gate to drain capacitance (\u003cem\u003eC\u003c/em\u003e\u003csub\u003e\u003cem\u003egd\u003c/em\u003e\u003c/sub\u003e) and gate to source capacitance (\u003cem\u003eC\u003c/em\u003e\u003csub\u003e\u003cem\u003egs\u003c/em\u003e\u003c/sub\u003e) are critical as shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig6\" class=\"InternalRef\"\u003e6\u003c/span\u003e (a). Capacitance affects switching speed in integrated circuits. However, the parasitic capacitances created at the drain and source terminals w.r.t. gate can be used to calculate the gate capacitance. The parasitic gate capacitance is calculated as follows [\u003cspan citationid=\"CR30\" class=\"CitationRef\"\u003e30\u003c/span\u003e]:\u003cdiv id=\"Equ3\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ3\" name=\"EquationSource\"\u003e\n$${C_{gg}}={C_{gs}}+{C_{gd}}$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e3.0\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eThe unity current gain cut-off frequency (\u003cem\u003ef\u003c/em\u003e\u003csub\u003e\u003cem\u003eT\u003c/em\u003e\u003c/sub\u003e) is an important factor in GAA nanowire TFET devices' high frequency performance as shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig6\" class=\"InternalRef\"\u003e6\u003c/span\u003e (b). The intrinsic delay of the transistor is reduced as the cut-off frequency rises making it a first-order figure of merit for frequency response.it is denoted by expression given in 4.0.\u003cdiv id=\"Equ4\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ4\" name=\"EquationSource\"\u003e\n$${f_T}=\\frac{{{g_m}}}{{2\\pi ({C_{gs}}+{C_{gd}})}}=\\frac{{{g_m}}}{{2\\pi ({C_{gg}})}}$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e4.0\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eAccording to Eq.\u0026nbsp;(\u003cspan refid=\"Equ3\" class=\"InternalRef\"\u003e3.0\u003c/span\u003e), The device's total gate capacitance (\u003cem\u003eC\u003c/em\u003e\u003csub\u003e\u003cem\u003egg\u003c/em\u003e\u003c/sub\u003e) and transconductance (\u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e) have the biggest influence on the unity gain cut-off frequency's performance. Hetero junction-based GAA Nanowire TFET has better performance than homo junction. Device efficiency, also known as the transconductance generation factor (TGF), is the ratio of transconductance to dc current. It refers to how well the drain current is used to obtain the desired transconductance as shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig7\" class=\"InternalRef\"\u003e7\u003c/span\u003e. It measures device performance in terms of speed and energy efficiency for digital circuit applications. It indicates the device's operating zone. Device efficiency (TGF) is given by formula in Eq.\u0026nbsp;\u003cspan refid=\"Equ5\" class=\"InternalRef\"\u003e5.0\u003c/span\u003e.\u003cdiv id=\"Equ5\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ5\" name=\"EquationSource\"\u003e\n$$TGF=\\frac{{{g_m}}}{{{I_D}}}$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e5.0\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003eIt is evident that the TGF of heterojunction GAA NWTFET is higher than homojunction GAA NWTFET, because Eq.\u0026nbsp;(\u003cspan refid=\"Equ5\" class=\"InternalRef\"\u003e5.0\u003c/span\u003e) shows its dependence on \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e and as we have seen previously heterojunction GAA NWTFET has higher \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e than homojunction GAA NWTFET. The transconductance frequency product (TFP), is defined as the product of device efficiency (TGF) and cut-off frequency, is a significant metric for high-frequency applications as shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig8\" class=\"InternalRef\"\u003e8\u003c/span\u003e. It is calculated using the Eq.\u0026nbsp;(\u003cspan refid=\"Equ6\" class=\"InternalRef\"\u003e6.0\u003c/span\u003e) formula.\u003cdiv id=\"Equ6\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ6\" name=\"EquationSource\"\u003e\n$$TFP=\\left( {\\frac{{{g_m}}}{{{I_D}}}} \\right) \\times {f_T}$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e6.0\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003eThe TFP represents a trade-off between bandwidth and power consumption for moderate to high-speed operation. From Eq.\u0026nbsp;(\u003cspan refid=\"Equ6\" class=\"InternalRef\"\u003e6.0\u003c/span\u003e), it is evident that TFP is again depending on transconductance \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e, obviously heterojunction has more \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e than homojunction, So, heterojunction yields better results. Heterojunction GAA nanowire TFET has better efficiency than homo junction GAA nanowire TFET. This implies better performance of devices in terms of power saving and faster operation. A higher TFP value also indicates good linearity of the device.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003c/div\u003e \u003cdiv id=\"Sec6\" class=\"Section2\"\u003e \u003ch2\u003e3.3 Biosensing Analysis\u003c/h2\u003e \u003cp\u003eBiosensors using TFET technology have revolutionized the area [\u003cspan citationid=\"CR31\" class=\"CitationRef\"\u003e31\u003c/span\u003e] and the positioning of biomolecules in TFET-based biosensors is critical and by analyzing some electrical parameters, presence of biomolecules can be identified [\u003cspan citationid=\"CR32\" class=\"CitationRef\"\u003e32\u003c/span\u003e]. TFET-based biosensors are only sensitive when biomolecules accumulate at the tunnel junction, instead of planar TFETs, greatly scaled three-dimensional devices are used to produce TFET-based biosensors will be more viable than using FET-based biosensors [\u003cspan citationid=\"CR33\" class=\"CitationRef\"\u003e33\u003c/span\u003e]. GAA-NW devices feature a full-enclosed gate structure, as a result, the gate area of the GAA-NWTFET is more significant than that of other 2D device with the same footprint, providing for superior gate control [\u003cspan citationid=\"CR26\" class=\"CitationRef\"\u003e26\u003c/span\u003e]. The GAA-NW structure effectively reduces short channel effects and improves the sensitivity of the biosensor [\u003cspan citationid=\"CR34\" class=\"CitationRef\"\u003e34\u003c/span\u003e]. The proposed hetero junction gate all around nanowire TFET (HJ-GAA-NWTFET) biosensor is depicted in 3D schematic form in Fig.\u0026nbsp;\u003cspan refid=\"Fig9\" class=\"InternalRef\"\u003e9\u003c/span\u003e. The suggested HJ-GAA-NWTFET biosensor's 2D cross-sectional view, shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig9\" class=\"InternalRef\"\u003e9\u003c/span\u003e, provides an insight into the proposed biosensor's spatial arrangement. The device\u0026rsquo;s diementinal parameters and their values are listed in table 3.\u003c/p\u003e \u003cp\u003e \u003cdiv class=\"gridtable\"\u003e\u003ctable float=\"Yes\" id=\"Tab3\" border=\"1\"\u003e \u003ccaption language=\"En\"\u003e \u003cdiv class=\"CaptionNumber\"\u003eTable 3.0\u003c/div\u003e \u003cdiv class=\"CaptionContent\"\u003e \u003cp\u003eDesign specification for the proposed device\u003c/p\u003e \u003c/div\u003e \u003c/caption\u003e \u003ccolgroup cols=\"2\"\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c1\" colnum=\"1\"\u003e\u003c/div\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c2\" colnum=\"2\"\u003e\u003c/div\u003e \u003cthead\u003e \u003ctr\u003e \u003cth align=\"left\" colname=\"c1\"\u003e \u003cp\u003eParameters\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c2\"\u003e \u003cp\u003eHJ-GAA-NWTFET\u003c/p\u003e \u003c/th\u003e \u003c/tr\u003e \u003c/thead\u003e \u003ctbody\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eSource doping concentration (N\u003csub\u003eA\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e1 \u0026times;10\u003csup\u003e20\u003c/sup\u003e cm\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eDrain doping concentration (N\u003csub\u003eD\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e1 \u0026times;10\u003csup\u003e20\u003c/sup\u003e cm\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eChannel doping concentration (N\u003csub\u003eC\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e1\u0026times;10\u003csup\u003e16\u003c/sup\u003e cm\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eNanowire Radius (R)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e10 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eChannel thickness (t\u003csub\u003eSi\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e20 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eOxide thickness (t\u003csub\u003eox\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e4 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eGate work-function\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e4.5 eV\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eDielectric constant of HfO\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e25\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eDielectric constant of biomolecules\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e\u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;1 to \u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;11\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eGate length (L\u003csub\u003eG\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e100 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eSource length (L\u003csub\u003eS\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e50 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eDrain length (L\u003csub\u003eD\u003c/sub\u003e)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c2\"\u003e \u003cp\u003e50 nm\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003c/tbody\u003e \u003c/colgroup\u003e \u003c/table\u003e\u003c/div\u003e \u003c/p\u003e \u003cp\u003eA 4nm thick layer of \u003cem\u003eHfO\u003c/em\u003e\u003csub\u003e\u003cem\u003e2\u003c/em\u003e\u003c/sub\u003e is kept between gate electrode and nanowire. \u003cem\u003eZrO\u003c/em\u003e\u003csub\u003e\u003cem\u003e2\u003c/em\u003e\u003c/sub\u003e is taken as extra dielectric and placed on either side of \u003cem\u003eHfO\u003c/em\u003e\u003csub\u003e\u003cem\u003e2\u003c/em\u003e\u003c/sub\u003e in such a way that it lies under gate electrode. This is used to vary the dielectric constant value. To study device performance under all conditions, the dielectric constant of Biomolecules is adjusted from \u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;1 to \u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;11. Adding air to the chamber with a dielectric constant of (\u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;1) provides a benchmark reference value for assessing sensitivity. Before analysing the HJ-GAA-NWTFET biosensor, few assumptions have been made, including that the gap under the gate on either side of HfO\u003csub\u003e2\u003c/sub\u003e is filled with biomolecules. The immobilized biomolecules under the gate have dielectric constants ranging from \u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;1 to \u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;11.The energy band bending occurs as the dielectric constant of the biomolecule varies. Figure\u0026nbsp;\u003cspan refid=\"Fig10\" class=\"InternalRef\"\u003e10\u003c/span\u003e depicts the alteration of the HJ-GAA-NWTFET biosensor's energy band diagram in response to changes in the biomolecule's dielectric constant.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eAt the source and channel intersection, there are obvious differences. Tunnelling happens here, and variations in bands occur due to changes in the dielectric constant of biomolecules.\u003c/p\u003e \u003cp\u003eFigure\u0026nbsp;\u003cspan refid=\"Fig11\" class=\"InternalRef\"\u003e11\u003c/span\u003e shows the typical drain current for changes in biomolecules' dielectric constant. For biomolecules with dielectric constant values ranging from 1 to 11, the transfer characteristics of the HJ-GAA-NWTFET biosensor are presented. We have used a substance with a dielectric constant of 1 to mimic the absence of the biomolecule (air) as a standard for detecting the presence of the biomolecule and assessing the sensitivity of the device.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eBand gap engineering is used by biomolecules with various dielectric constants at the source and channel intersection, resulting in variations in drain current.\u003c/p\u003e \u003cp\u003eFigure\u0026nbsp;\u003cspan refid=\"Fig12\" class=\"InternalRef\"\u003e12\u003c/span\u003e (a) depicts the potential variation of the HJ-GAA-NWTFET biosensor for various biomolecule dielectric constant values. The increase in the biomolecule's dielectric constant causes a potential change in the nanowire semiconductor, and as a result, the band begins to shift its position. The inter-trapped charge carriers around the junction are influenced by increasing the dielectric constant of biomolecules, resulting in a shift in potential. Different dielectric constant values for the selected biomolecules, the horizontal electric field along the device is illustrated in Fig.\u0026nbsp;\u003cspan refid=\"Fig12\" class=\"InternalRef\"\u003e12\u003c/span\u003e (a). Changes in the dielectric constant of biomolecules leads to change in electric field also. The inclusion of biomolecules causes a change in steepness due to band gap engineering at junction of source and channel as a result, the electric field is shifting. One of the most significant aspects of a biosensor is its sensitivity. Biosensors made of nanoparticles have higher sensitivity than bulk devices [\u003cspan citationid=\"CR35\" class=\"CitationRef\"\u003e35\u003c/span\u003e]. Because the subthreshold area consumes less power and the transfer characteristics are more sensitive, the transconductance-to-current ratio (\u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e\u003cem\u003e/I\u003c/em\u003e\u003csub\u003e\u003cem\u003eds\u003c/em\u003e\u003c/sub\u003e), which has traditionally been used as an analogue performance indicator can be used as a sensing metric because it is simple to assess a change in its value in the subthreshold area due to the presence of biomolecules in the cavity, and at a low power level [\u003cspan citationid=\"CR36\" class=\"CitationRef\"\u003e36\u003c/span\u003e]. Transfer characteristics is highest below threshold compared to above threshold operation so it is necessary to find a sensing metric that can identify biomolecules at reduced power levels. we have used \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e\u003cem\u003e/I\u003c/em\u003e\u003csub\u003e\u003cem\u003eds\u003c/em\u003e\u003c/sub\u003e as a sensing parameter for dielectric modulated TFET-based biosensors in this work [\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e].\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003e \u003cem\u003eg\u003c/em\u003e \u003csub\u003e \u003cem\u003em\u003c/em\u003e \u003c/sub\u003e \u003cem\u003e/I\u003c/em\u003e \u003csub\u003e \u003cem\u003eds\u003c/em\u003e \u003c/sub\u003e improves when \u003cem\u003ek\u003c/em\u003e increases due to the accumulation of biomolecules in the cavity, resulting in greater values at lower Ids values. This indicates\u003c/p\u003e \u003cp\u003e \u003col\u003e \u003cspan\u003e \u003cli\u003e \u003cp\u003eCurrent-voltage characteristics shifting to lower (absolute) gate voltages.\u003c/p\u003e \u003c/li\u003e \u003c/span\u003e \u003cspan\u003e \u003cli\u003e \u003cp\u003eThe presence of biomolecules causes an increase in gm/Ids max, which indicates a change in S-swing (as \u003cem\u003eg\u003c/em\u003e\u003csub\u003e\u003cem\u003em\u003c/em\u003e\u003c/sub\u003e\u003cem\u003e/I\u003c/em\u003e\u003csub\u003e\u003cem\u003eds\u003c/em\u003e\u003c/sub\u003e = ln(10)/S-swing).\u003c/p\u003e \u003c/li\u003e \u003c/span\u003e \u003c/ol\u003e \u003c/p\u003e \u003cp\u003eTable\u0026nbsp;\u003cspan refid=\"Tab4\" class=\"InternalRef\"\u003e3\u003c/span\u003e shows the sensitivity comparison of the proposed biosensor to other published works. The proposed biosensor, shows better sensitivity as compared to other three before published works, as shown in Table \u003cspan refid=\"Tab4\" class=\"InternalRef\"\u003e3\u003c/span\u003e.\u003c/p\u003e \u003cp\u003e \u003cdiv class=\"gridtable\"\u003e\u003ctable float=\"Yes\" id=\"Tab4\" border=\"1\"\u003e \u003ccaption language=\"En\"\u003e \u003cdiv class=\"CaptionNumber\"\u003eTable 4\u003c/div\u003e \u003cdiv class=\"CaptionContent\"\u003e \u003cp\u003eComparative table of sensitivity parameters of different biosensors.\u003c/p\u003e \u003c/div\u003e \u003c/caption\u003e \u003ccolgroup cols=\"3\"\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c1\" colnum=\"1\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\".\" class=\"colspec\" colname=\"c2\" colnum=\"2\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\".\" class=\"colspec\" colname=\"c3\" colnum=\"3\"\u003e\u003c/div\u003e \u003cthead\u003e \u003ctr\u003e \u003cth align=\"left\" colname=\"c1\"\u003e \u003cp\u003eReferences\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c2\"\u003e \u003cp\u003eYear\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c3\"\u003e \u003cp\u003eSensitivity\u003c/p\u003e \u003c/th\u003e \u003c/tr\u003e \u003c/thead\u003e \u003ctbody\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eProposed work\u003c/p\u003e \u003cp\u003e(HJ-GAA-NWTFET)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e2025\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e10\u003csup\u003e8\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eReddy et al. [\u003cspan citationid=\"CR37\" class=\"CitationRef\"\u003e37\u003c/span\u003e]\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e2021\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e10\u003csup\u003e6\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eAbdi et al. [\u003cspan citationid=\"CR38\" class=\"CitationRef\"\u003e38\u003c/span\u003e]\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e2015\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e10\u003csup\u003e6\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003eNarang et al. [\u003cspan citationid=\"CR25\" class=\"CitationRef\"\u003e25\u003c/span\u003e]\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e2015\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e10\u003csup\u003e6\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003c/tbody\u003e \u003c/colgroup\u003e \u003c/table\u003e\u003c/div\u003e \u003c/p\u003e \u003c/div\u003e"},{"header":"4. Conclusion","content":"\u003cp\u003eFor low power or low energy electronic circuits with a supply voltage V\u003csub\u003eDD\u003c/sub\u003e less than 0.5V, TFET may be a viable alternative to traditional MOSFETs. So TFETs have lower static energy dissipation than MOSFETs, even if their ONN-currents are the same. TFET can then give the same ONN-current as V\u003csub\u003eDD\u003c/sub\u003e at a lower supply voltage. As a result, TFET will lower dynamic energy dissipation (as dynamic energy is directly proportional to V\u003csub\u003eDD\u003c/sub\u003e and V\u003csub\u003eDD\u003c/sub\u003e\u003csup\u003e2\u003c/sup\u003e). We have seen in our study that heterojunction gate all around nanowire TFET is better in DC, analog/RF, linearity and biosensing performance compared to homo junction gate all around nanowire TFET. This work discusses the application of HJ-GAA-NWTFET based biosensors for the detection of various biomolecules (\u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;1 to \u003cem\u003ek\u003c/em\u003e\u0026thinsp;=\u0026thinsp;11). Therefore, the proposed HJ-GAA-NWTFET is a more suitable device for low power VLSI circuit design for biosensing applications.\u003c/p\u003e"},{"header":"Declarations","content":"\u003cp\u003e\u003cstrong\u003e\u003cem\u003eAuthor\u0026rsquo;s Contributions:\u003c/em\u003e\u003c/strong\u003e\u003c/p\u003e\n\u003cp\u003eAll the authors contributed separately to the design and investigation, conceptualization, and analysis of this work. Author Ashish Kumar Singh prepared the first draft of the manuscript after performing the simulation study and validation. Authors Swapnil Srivastava and Marella Mangapathi Raju have edited the manuscript after data analysis and validation. Author Manas Ranjan Tripathy provided some fruitful discussions and comments regarding the content of the work and author Satyabrata Jit commented on the manuscript and supervised the entire work. All the authors read and approved the final version of the manuscript\u003c/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cem\u003eData availability:\u003c/em\u003e\u003c/strong\u003e\u003cem\u003e\u0026nbsp;\u003c/em\u003eNot Applicable\u003c/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cem\u003eCode Availability:\u003c/em\u003e\u003c/strong\u003e Not Applicable\u003c/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cem\u003eDeclarations Consent to Participate\u0026nbsp;\u003c/em\u003e\u003c/strong\u003e\u003c/p\u003e\n\u003cp\u003eAll the authors contributed voluntarily to this work. Consent for Publication In accordance with the copyright transfer or open access rules.\u0026nbsp;\u003c/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cem\u003eEthics Approval:\u003c/em\u003e\u003c/strong\u003e\u003cem\u003e\u0026nbsp;\u003c/em\u003eNot Applicable.\u003cem\u003e\u0026nbsp;\u003c/em\u003e\u003c/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003cem\u003eFunding:\u003c/em\u003e\u003c/strong\u003e Not Applicable\u003c/p\u003e"},{"header":"References","content":"\u003col\u003e\n\u003cli\u003eR. Hossain, M. Zheng and A. Albicki, \u0026amp; quot; Reducing power dissipation in CMOS circuits by signal probability-based transistor reordering, \u0026amp; quot; in \u003cem\u003eIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems\u003c/em\u003e, vol. 15, no. 3, pp. 361-368, 1996, doi: 10.1109/43.489107.\u003c/li\u003e\n\u003cli\u003eA. K. Yadav, K. Upadhyay, P. 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Jit, \u0026ldquo;Dielectric modulated TFET on SELBOX substrate as a label-free biosensor applications: analytical modeling study and sensitivity analysis,\u0026rdquo; 2024 \u003cem\u003ePhys. Scr\u003c/em\u003e. 99 105413, DOI 10.1088/1402-4896/ad7b8b.\u003c/li\u003e\n\u003cli\u003eSingh, A. K., Kumar, R., Maity, H., Singh, P., \u0026amp; Singh, S. (2024). Analog and linearity performance analysis of ferroelectric vertical tunnel field effect transistor with and without source pocket. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 37(4), e3274. https://doi.org/10.1002/jnm.3274.\u003c/li\u003e\n\u003cli\u003eSilvaco, Inc, Atlas User\u0026rsquo;s Manual, Device simulation software, Santa Clara: Silvaco, Inc, October 2004.\u003c/li\u003e\n\u003cli\u003eTurner, Anthony P F. \u0026ldquo;Biosensors: sense and sensibility.\u0026rdquo; Chemical Society reviews 42 8 (2013): 3184-96 .\u003c/li\u003e\n\u003cli\u003eK.I. Chen, B.R. Li, Y.T. 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Gupta M, \u0026ldquo;Ambipolar Behaviour of Tunnel Field Effect Transistor (TFET) as an Advantage forBiosensing Applications, pp 171\u0026ndash;172, 2014. https://link.springer.com/book/10.1007/978-3-319-03002-9\u003c/li\u003e\n\u003c/ol\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":true,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":false,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Heterojunction, Gate all Around (GAA) TFETs, Nanowire, Band to Band Tunneling (BTBT), Dielectric Modulated Biosensor, Label-Free Biosensor","lastPublishedDoi":"10.21203/rs.3.rs-6355715/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-6355715/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eIn this study, a heterojunction gate-all-around nanowire tunnel field-effect transistor (HJ-GAA-NWTFET) with a channel length of 100 nm is designed, attaining a high \u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eON\u003c/em\u003e\u003c/sub\u003e\u003cem\u003e/I\u003c/em\u003e\u003csub\u003e\u003cem\u003eOFF\u003c/em\u003e\u003c/sub\u003e ratio of approximately 10\u003csup\u003e13\u003c/sup\u003e and an exceptionally low off-state current (\u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eOFF\u003c/em\u003e\u003c/sub\u003e) of around 10\u003csup\u003e\u0026minus;\u0026thinsp;19\u003c/sup\u003e A. The RF performance metrics of the proposed HJ-GAA-NWTFET are compared with those of a conventional gate-all-around nanowire tunnel field-effect transistor (GAA-NWTFET), and proposed TFET is showing enhanced performance in terms of electrical and biosensing parameters. The gate-all-around architecture significantly improves \u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eOFF\u003c/em\u003e\u003c/sub\u003e suppression and enhances the \u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eON\u003c/em\u003e\u003c/sub\u003e\u003cem\u003e/I\u003c/em\u003e\u003csub\u003e\u003cem\u003eOFF\u003c/em\u003e\u003c/sub\u003e ratio owing to its robust gate control. Furthermore, the integration of a heterojunction enhances the on-state current (\u003cem\u003eI\u003c/em\u003e\u003csub\u003e\u003cem\u003eON\u003c/em\u003e\u003c/sub\u003e), making HJ-GAA-NWTFETs a viable option for sophisticated low-power and high-performance device applications. The proposed dielectric-modulated HJ-GAA-NWTFET based biosensor exhibits a reduced threshold voltage and subthreshold swing (SS), making it suitable for low-power biosensor applications.\u003c/p\u003e","manuscriptTitle":"Electrical and Biosensing Performance Analysis of GaSbP/InP Heterojunction Gate-All-Around Nanowire TFET","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-05-19 15:24:54","doi":"10.21203/rs.3.rs-6355715/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"aaed2768-6e33-47d0-bfc0-cb3312d63eca","owner":[],"postedDate":"May 19th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2025-10-27T14:29:55+00:00","versionOfRecord":[],"versionCreatedAt":"2025-05-19 15:24:54","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-6355715","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-6355715","identity":"rs-6355715","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}