Electronic Transition Analysis in InAlN Semiconductors: A Derivative-Based Framework Beyond the Tauc Method

Electronic Transition Analysis in InAlN Semiconductors: A Derivative-Based Framework Beyond the Tauc Method | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Electronic Transition Analysis in InAlN Semiconductors: A Derivative-Based Framework Beyond the Tauc Method Juan David Cañón-Bermúdez, Luis Fernando Mulcué-Nieto, Elisabeth Restrepo Parra This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7974288/v1 This work is licensed under a CC BY 4.0 License Status: Under Revision Version 1 posted 10 You are reading this latest preprint version Abstract We propose a derivative-based methodology for precise optical bandgap determination in semiconductors, addressing the limitations of the traditional Tauc method, which neglects localized states in the Urbach tail and intermediate bands. This technique is based on the analysis of the derivatives of the optical absorbance with respect to energy, which allows the identification of specific electronic transitions. From the UV-Vis spectra, numerical derivatives were calculated, and peaks were fitted using Gaussian models to characterize key parameters such as intensity, full width at half maximum (FWHM), and area under the curve. By applying this method to InAlN samples deposited by magnetron sputtering, a more detailed characterization of the optical properties of the material was achieved, identifying both fundamental transitions and those associated with defects or intermediate bands. The results demonstrate that this technique provides more complete information than the traditional method, representing a significant advance in the optimization of semiconductors in applications such as solar cells. Physical sciences/Materials science Physical sciences/Optics and photonics Physical sciences/Physics absorbance derivatives electronic transitions InAlN (indium aluminum nitride) optical bandgap optical characterization Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Revision Version 1 posted Editorial decision: Revision requested 23 Dec, 2025 Reviews received at journal 22 Dec, 2025 Reviews received at journal 19 Dec, 2025 Reviewers agreed at journal 11 Dec, 2025 Reviewers agreed at journal 09 Dec, 2025 Reviewers invited by journal 13 Nov, 2025 Editor assigned by journal 13 Nov, 2025 Editor invited by journal 13 Nov, 2025 Submission checks completed at journal 10 Nov, 2025 First submitted to journal 10 Nov, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7974288","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":549318934,"identity":"8200fcd8-d6ef-475d-91a0-cfc0252bfe5e","order_by":0,"name":"Juan David Cañón-Bermúdez","email":"","orcid":"","institution":"Universidad Nacional de Colombia Sede Manizales","correspondingAuthor":false,"prefix":"","firstName":"Juan","middleName":"David","lastName":"Cañón-Bermúdez","suffix":""},{"id":549318935,"identity":"1d8bd708-94a1-4f83-b333-c79b4d9800c8","order_by":1,"name":"Luis Fernando 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Method","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"scientific-reports","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scirep","sideBox":"Learn more about [Scientific Reports](http://www.nature.com/srep/)","snPcode":"","submissionUrl":"","title":"Scientific Reports","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Scientific Reports","inReviewEnabled":true,"inReviewRevisionsEnabled":true},"keywords":"absorbance derivatives, electronic transitions, InAlN (indium aluminum nitride), optical bandgap, optical characterization","lastPublishedDoi":"10.21203/rs.3.rs-7974288/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7974288/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eWe propose a derivative-based methodology for precise optical bandgap determination in semiconductors, addressing the limitations of the traditional Tauc method, which neglects localized states in the Urbach tail and intermediate bands. This technique is based on the analysis of the derivatives of the optical absorbance with respect to energy, which allows the identification of specific electronic transitions. From the UV-Vis spectra, numerical derivatives were calculated, and peaks were fitted using Gaussian models to characterize key parameters such as intensity, full width at half maximum (FWHM), and area under the curve. By applying this method to InAlN samples deposited by magnetron sputtering, a more detailed characterization of the optical properties of the material was achieved, identifying both fundamental transitions and those associated with defects or intermediate bands. 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