Dielectric Properties of Tin Selenide Nanoparticles

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N. Gosai, G. K. Solanki This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5841511/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract In this paper of chemical precipitation method to prepared SnSe nanoparticles through directly mixed Sodium selenosulfate solution (Na 2 SeSO 3 ) in selenium chloride solution (SnCl 2 ·2H 2 O) by drop wise. We investigated the dielectric properties of Tin Selenide (SnSe) nanoparticles obtained by chemical precipitation method in deionized water. Chemical composition of grown powder is studied with the help of EDAX. Dielectric properties of tin selenide nano particles showed strong indication of frequency and temperature dependence of capacitance (C), dielectric constant (K), dielectric loss (tanδ), real and imaginary part of dielectric constant (ε' and ε") over the frequency range 100 Hz to 1M Hz using LCR meter model 4284A and temperature ranges 303 to 523 K. In this investigation, dielectric constant is observed to be high at lower frequency and it systematically decreases with increasing frequency up to 600 kHz and then after it nearly becomes frequency independent while dielectric loss tanδ decreases with temperature and frequency. Physical sciences/Nanoscience and technology/Nanoscale materials Physical sciences/Nanoscience and technology/Other nanotechnology SnSe nanoparticles chemical precipitaton mehod and dielectric constant Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 I. INTRODUCTION In recent years, great resources have been devoted to the preparation of nanoparticles using a wide variety of methods including chemical reduction [1], solvothermal route [2, 3], thermal decomposition [4] and electrodeposition [5]. These efforts have been to the successful synthesis of many nanopaticles including metals [6], oxides [7], as well as sulfides [8], which have already been used as optoelectronic materials in sensors, laser materials, solar cells and other devices. The nanomaterials have been extensively studied due to their unique physical and chemical properties in diverse areas [9]. These properties applications have stimulated the search for new synthetic methods for these materials. Recently, the physical properties of such type of layered materials have been a field of intensive study. And due to their electrical and optical properties, the binary IV- VI layered semiconducting compounds produced a great deal of interest and applications in different area. SnSe, being a member of this family, is less investigated as far as its dielectric properties are concerned. In present work i.e. dielectric properties of solids often gives good insight into the electric field distribution within the solids. Studying the dielectric constant as a function of frequency and temperature, the various polarization mechanisms in solids can be understood. It attracts attention in infrared optoelectronic devices, radiation detectors, holographic recording system, electrical switching, polarity dependent memory switching and solar cell fabrication. The study of dielectric behavior of chalcogenide materials can be useful for the understanding of conduction mechanism. In addition, a study of temperature dependence of dielectric permittivity particularly in the range of frequencies where dielectric dispersion occurs can be of great importance for the understanding of the nature and origin of the losses occurring in these materials [10]. Now a days, the negative capacitance effect has been displayed in a variety of electronic devices, such as p- n junctions, metalsemiconductor Schottky diodes [11, 12], GaAs/ AlGaAs quantum well infrared photodetectors (QWIPs) and GaAs homojunction far infra red detectors. The microscopic physical mechanisms of the negative capacitance in different devices are obviously different and have been ascribed mainly to the contact injection, interface states, or minority- carrier injection. Negative capacitance has been observed by various workers in amorphous chalcogenide films, in structures of the type metal- insulator- metal and in semi- insulating polycrystalline silicon, etc. II. MATERIAL AND METHODS SnSe nanostructures were synthesized by chemical precipitation method of SnCl 2 ·2H 2 O solution and Sodium selenosulfate sources. In a typical synthesis, SnCl 2 ·2H 2 O and Na 2 SeSO 3 were dissolved in 30 ml of double distil water, respectively. The Na 2 SeSO 3 solution was added dropwise to the SnCl 2 solution and magnetically stirred to form slurry. Then, the slurry was placed in a 100-ml autoclave with a Teflon liner autoclave was maintained at different temperature for 12 h at room temperature. The resulting light orange precipitates were collected and washed with ethanol and distilled water several times, and then dried in vacuum at 100 C for 10 h. To prepare Tin selenide (SnSe) nanoparticles by chemical precipitation method using study of dielectric behavior. The as grown nano powder or pallets may be used directly for dielectric study. The geometrical dimension of used sample was measured by a travelling microscope and the thickness has been measured by micrometer screw. III. HIGH TEMPERATURE LCR MEASUREMENT SET UP Figure 1 shows high temperature LCR experiment set up used for current analysis. The dielectric measurements were carried out using two standard electrode methods. The specimen was mounted in between two flat Stainless Steel parallel electrodes of a specifically designed sample holder. Both the upper and lower base of the holder can be screwed in four proper contact of the sample with the electrode. The sample holder was enclosed in a specially built resistance heating furnace which is capable to provide temperature up to 625 K. We have measured dielectric parameters automation and controlling software ‘LABVIEW’ is used. The parameters like the thickness and area of the sample, starting and ending temperature and frequency have been set in software. These input data are essential in order to measure the dielectric properties at desired temperature and frequencies. The digital temperature controller DT84848 is used to monitor the preferred temperature of the specimen. When preferred temperature is achieved HP4284A LCR meter will scan all the frequencies and resultant data is stored in the storage device. IV. RESULTS AND DISCUSSION The The grown SnSe nanoparticles possess the capacitance, dielectric constant and dielectric loss are important parameters in the selection of materials for device application. The dielectric constant ε' is evaluated from the equation, Where C is the capacitance (F) of the crystalline sample, d is the thickness (m) of the sample, ε 0 is the permittivity of free space (ε 0 = 8.85 × 10 − 12 Fm − 1 ) and A is the area (m 2 ) of the cross section of sample. The imaginary part of the dielectric loss (ε") at the various frequencies was calculated using the measured conductance values (G) from the relation, Where G is the dc conductance of the sample, and ω (= 2πf) is the angular frequency. The dielectric loss tanδ was calculated from the relation, The alternating current (ac) conductivity σac is calculated using the relation, where f is the frequency (Hz) of the applied a.c. field. The dielectric behaviour is frequency dependant as well as temperature dependent. At lower temperature the mobility of ions is very low and so is the conductivity, resulting a lower value of capacitance. With temperature, the mobility of charge carriers increases, resulting the increase in space charge polarization and capacitance both. The capacitance is increases with temperature and it decreases with increasing frequency for SnSe nanoparticles as shown in Fig. 2 . Variation of dielectric loss with frequency at different temperature shows in Fig. 3 . Dielectric loss tanδ, decreases with increasing frequency and it decreases consistently with temperature for SnSe nanoparticles. For many materials it has been observed that the dielectric loss decreases as frequency increases [13, 14]. The response of the normal materials to applied fields depends on the frequency of the applied fields. In fact, polarization of material does not respond instantaneously to an applied field so the permittivity is often treated as a complex function of frequency. From Fig. 4 , dielectric constant is observed to be high at lower frequency and it systematically decreases with increasing frequency up to 300 kHz and then after it nearly becomes frequency independent for these synthesis nanoparticles. The dielectric constant of solids is known to consist of contribution from electronic, ionic, dipolar and space charge polarization exhibits itself prominently at lower frequency. This polarization is known to arise from defects or impurities present, grain boundaries and also due to creation and distribution of dipoles either within the bulk or at the surface of the nanoparticles[15, 16]. Hence, the higher values of the dielectric constant at lower frequency in the present investigation may be because of a large amount of space charge polarization [17, 18]. Less frequency dependence value of ε' is taken as static dielectric constant. This indicates the probable presence of ionic and electric polarization. Since, the concentration of nanoparticles defects controlling the space charge polarization is negligible. The dispersion of ε' with frequency can be attributed to the Maxwell- Wagner type interfacial polarization i.e. the fact that in homogeneities give rise to a frequency dependence of conductivity because charge carriers accumulate at the boundaries of less conducting regions, thereby creating interfacial polarization. The temperature is also found to exhibit an interesting influence on the dielectric properties. The value of ε' decreases with temperature for the grown nanoparticles. From the Fig. 4 shows that at low temperatures the variation in dielectric constant is much less frequency dependant, while at higher temperatures the increment in dielectric constant is stronger and much more frequency dependant. This is due to lattice expansion, polarizability of the constituent ions due to increase of atomic polarizability [19]. The changes in ε' with temperature are of similar nature at all the frequencies. Figure 5 shows variation of real part of dielectric constant with frequency. The change in imaginary part of dielectric constant with frequency is shown in Fig. 6 and indicates that as the frequency increases the value of imaginary part of the dielectric constant decreases. And also it decreases with temperature for SnSe nanoparticles. The observed decrease in ε" values with frequency and decrease in ε" with temperature, which are the common features of many other compositions and therefore explained on similar arguments as for dielectric constant ε'. V. CONCLUSION Synthesis of tin selenide and tin selenide composite from tin and selenium elements by chemical precipitation is a very simple room temperature process with relatively short reaction time. We have been grown successfully good crystalline dimension of SnSe nanoparticles using chemical precipitation method. These nanoparticles are used for device application purpose. The dielectric properties i.e. capacitance (C), dielectric constant (ε'), dielectric loss tanδ, real and imaginary dielectric constant (ε") are measured and represented as a function of frequency and temperature. Declarations Author Contribution Fruitful discussion in Bodyframing of the article Acknowledgements : Authors are thankful to UGC New Delhi, for sanctioning major research project to G. K. Solanki for providing facility for this presented work. References C.S. Yang, Q. Liu, S.M. Kauzlarich, Chem. Mater. 12 (2000) 983. P. Zhang, L. Gao, Langmuir 19 (2003) 208. S. Schlecht, L. Kienle, Inorg. Chem. 40 (2001) 5719. C. Nayral, T. Ould-Ely, A. Maisonnat, B. Chaudret, P. Fau, L. Lescouzeres, A. Peyre-Lavigne, Adv. Mater. 11 (1999) 61. H. Natter, M. Schmelzer, R. Hempelmann, J. Mater. Res. 13 (1998) 1186. K.W. Park, J.H. Choi, B.K. Kwon, S.A. Lee, Y.E. Sung, H.Y. Ha, S.A. Hong, H. Kim, A. Wieckowski, J. Phys. Chem. B 106 (2002) 1869. Y. Liu, C. Zheng, W. Wang, C. Yin, G. Wang, Adv. Mater. 13 (2001) 1883. L.S. Price, I.P. Parkin, M.N. Field, A.M.E. Hardy, R.J.H. Clark, T.G. Hibbert, K.C. Molloy, J. Mater. Chem. 10 (2000) 527. U. Simon, R. Flesch, H. Wiggers, G. Schon, G. Schmid, J. Mater. Chem. 8 (1998) 517. Sharma J., Kumar S., Journal of Ovonic Research, 6(1) (2010) 35- 44. Wu X., Yang E.S. and Evans H.L., J. Appl. Phys, 68 (1990) 2845. Champness C.H. and Clark W.R., Appl. Phys. Lett., 56 (1990) 1104. Parekh B.B. and Joshi M.J., Cryst. Res and Technol., 42 (2007) 127–129. Parekh B.B., Vyas P.M., Vasant Sonal R. and Joshi M.J., Bull. Mater Sci., 31 (2008) 143-147. Maxwell J.C., Electricity and Magnetism, New York: Oxford Uni. Press, 1 (1973) 828. Wagner K.W., Am. Phys., 40 (1973) 817. Rao K.V. and Smakula A., J. Appl. Phys., 37 (1966) 319 – 321. Sastry S.S., Satyanandam G., Subrahmanyan A. and Murthy V.R.K., Phys. Stat. Solidi, 105 , (1988) K71. Smyth C.P., Dielectric Behaviour and Structure, John-Willey & Sons, New York, 132 (1953). Additional Declarations No competing interests reported. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-5841511","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":408325574,"identity":"832ec82e-c4ae-4353-86ac-e46f32fe860e","order_by":0,"name":"N. N. 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Solanki","email":"","orcid":"","institution":"Sardar Patel University","correspondingAuthor":false,"prefix":"","firstName":"G.","middleName":"K.","lastName":"Solanki","suffix":""}],"badges":[],"createdAt":"2025-01-16 11:38:21","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-5841511/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-5841511/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":75514980,"identity":"ea6e7bf1-169c-4c23-8126-cd90d8343c5a","added_by":"auto","created_at":"2025-02-05 11:15:19","extension":"png","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":167772,"visible":true,"origin":"","legend":"\u003cp\u003eHigh temperature LCR experiment set up.\u003c/p\u003e","description":"","filename":"1.png","url":"https://assets-eu.researchsquare.com/files/rs-5841511/v1/f8973075456a04de4a366134.png"},{"id":75514975,"identity":"90fbf091-d1f4-4be1-a712-876eb34bd016","added_by":"auto","created_at":"2025-02-05 11:15:19","extension":"png","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":94098,"visible":true,"origin":"","legend":"\u003cp\u003eVariation of Capacitance (C) with frequency and temperature.\u003c/p\u003e","description":"","filename":"2.png","url":"https://assets-eu.researchsquare.com/files/rs-5841511/v1/efa068a36ac216a87e3af0c3.png"},{"id":75515582,"identity":"6a9098a8-0e5c-4f16-b0aa-ca32fdd506dc","added_by":"auto","created_at":"2025-02-05 11:23:19","extension":"png","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":88069,"visible":true,"origin":"","legend":"\u003cp\u003eVariation of dielectric loss (tanδ) with frequency and temperature.\u003c/p\u003e","description":"","filename":"3.png","url":"https://assets-eu.researchsquare.com/files/rs-5841511/v1/be62b4985b188977e704b774.png"},{"id":75514979,"identity":"b03bdf96-acee-459e-82d3-792ca9713b98","added_by":"auto","created_at":"2025-02-05 11:15:19","extension":"png","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":96638,"visible":true,"origin":"","legend":"\u003cp\u003eVariation of dielectric constant (K) with frequency and temperature.\u003c/p\u003e","description":"","filename":"4.png","url":"https://assets-eu.researchsquare.com/files/rs-5841511/v1/e7cf1e5a61c56cf68f7a71d2.png"},{"id":75514983,"identity":"b08b2ffc-15c3-4ff9-a5a2-d2dfcdd14127","added_by":"auto","created_at":"2025-02-05 11:15:19","extension":"png","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":116209,"visible":true,"origin":"","legend":"\u003cp\u003eVariation of Real part of dielectric (ε')constant with frequency and temperature.\u003c/p\u003e","description":"","filename":"5.png","url":"https://assets-eu.researchsquare.com/files/rs-5841511/v1/ac784dfd47d0aabd6ff0707e.png"},{"id":75514984,"identity":"61b31ed1-d96c-4053-ad6e-5266274494e6","added_by":"auto","created_at":"2025-02-05 11:15:19","extension":"png","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":104136,"visible":true,"origin":"","legend":"\u003cp\u003eVariation of imaginary part of dielectric constant (ε\") with frequency and temperature.\u003c/p\u003e","description":"","filename":"6.png","url":"https://assets-eu.researchsquare.com/files/rs-5841511/v1/e5a89dd9c331a5a94b413f87.png"},{"id":75516639,"identity":"dda7c203-0b7e-4cb9-88f9-4513d11094df","added_by":"auto","created_at":"2025-02-05 11:31:18","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":910327,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-5841511/v1/fed50e15-3ec1-4668-846e-81461e69a462.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Dielectric Properties of Tin Selenide Nanoparticles","fulltext":[{"header":"I.\tINTRODUCTION","content":"\u003cp\u003eIn recent years, great resources have been devoted to the preparation of nanoparticles using a wide variety of methods including chemical reduction [1], solvothermal route [2, 3], thermal decomposition [4] and electrodeposition [5]. These efforts have been to the successful synthesis of many nanopaticles including metals [6], oxides [7], as well as sulfides [8], which have already been used as optoelectronic materials in sensors, laser materials, solar cells and other devices. The nanomaterials have been extensively studied due to their unique physical and chemical properties in diverse areas [9]. These properties applications have stimulated the search for new synthetic methods for these materials.\u003c/p\u003e \u003cp\u003eRecently, the physical properties of such type of layered materials have been a field of intensive study. And due to their electrical and optical properties, the binary IV- VI layered semiconducting compounds produced a great deal of interest and applications in different area. SnSe, being a member of this family, is less investigated as far as its dielectric properties are concerned.\u003c/p\u003e \u003cp\u003eIn present work i.e. dielectric properties of solids often gives good insight into the electric field distribution within the solids. Studying the dielectric constant as a function of frequency and temperature, the various polarization mechanisms in solids can be understood. It attracts attention in infrared optoelectronic devices, radiation detectors, holographic recording system, electrical switching, polarity dependent memory switching and solar cell fabrication.\u003c/p\u003e \u003cp\u003eThe study of dielectric behavior of chalcogenide materials can be useful for the understanding of conduction mechanism. In addition, a study of temperature dependence of dielectric permittivity particularly in the range of frequencies where dielectric dispersion occurs can be of great importance for the understanding of the nature and origin of the losses occurring in these materials [10].\u003c/p\u003e \u003cp\u003eNow a days, the negative capacitance effect has been displayed in a variety of electronic devices, such as p- n junctions, metalsemiconductor Schottky diodes [11, 12], GaAs/ AlGaAs quantum well infrared photodetectors (QWIPs) and GaAs homojunction far infra red detectors. The microscopic physical mechanisms of the negative capacitance in different devices are obviously different and have been ascribed mainly to the contact injection, interface states, or minority- carrier injection. Negative capacitance has been observed by various workers in amorphous chalcogenide films, in structures of the type metal- insulator- metal and in semi- insulating polycrystalline silicon, etc.\u003c/p\u003e"},{"header":"II.\tMATERIAL AND METHODS","content":"\u003cp\u003eSnSe nanostructures were synthesized by chemical precipitation method of SnCl\u003csub\u003e2\u003c/sub\u003e\u0026middot;2H\u003csub\u003e2\u003c/sub\u003eO solution and Sodium selenosulfate sources. In a typical synthesis, SnCl\u003csub\u003e2\u003c/sub\u003e\u0026middot;2H\u003csub\u003e2\u003c/sub\u003eO and Na\u003csub\u003e2\u003c/sub\u003eSeSO\u003csub\u003e3\u003c/sub\u003e were dissolved in 30 ml of double distil water, respectively. The Na\u003csub\u003e2\u003c/sub\u003eSeSO\u003csub\u003e3\u003c/sub\u003e solution was added dropwise to the SnCl\u003csub\u003e2\u003c/sub\u003e solution and magnetically stirred to form slurry. Then, the slurry was placed in a 100-ml autoclave with a Teflon liner autoclave was maintained at different temperature for 12 h at room temperature. The resulting light orange precipitates were collected and washed with ethanol and distilled water several times, and then dried in vacuum at 100 C for 10 h.\u003c/p\u003e \u003cp\u003eTo prepare Tin selenide (SnSe) nanoparticles by chemical precipitation method using study of dielectric behavior. The as grown nano powder or pallets may be used directly for dielectric study. The geometrical dimension of used sample was measured by a travelling microscope and the thickness has been measured by micrometer screw.\u003c/p\u003e"},{"header":"III. HIGH TEMPERATURE LCR MEASUREMENT SET UP","content":"\u003cp\u003eFigure \u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003e shows high temperature LCR experiment set up used for current analysis. The dielectric measurements were carried out using two standard electrode methods. The specimen was mounted in between two flat Stainless Steel parallel electrodes of a specifically designed sample holder. Both the upper and lower base of the holder can be screwed in four proper contact of the sample with the electrode. The sample holder was enclosed in a specially built resistance heating furnace which is capable to provide temperature up to 625 K. We have measured dielectric parameters automation and controlling software \u0026lsquo;LABVIEW\u0026rsquo; is used. The parameters like the thickness and area of the sample, starting and ending temperature and frequency have been set in software. These input data are essential in order to measure the dielectric properties at desired temperature and frequencies. The digital temperature controller DT84848 is used to monitor the preferred temperature of the specimen. When preferred temperature is achieved HP4284A LCR meter will scan all the frequencies and resultant data is stored in the storage device.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e"},{"header":"IV. RESULTS AND DISCUSSION","content":"\u003cp\u003eThe The grown SnSe nanoparticles possess the capacitance, dielectric constant and dielectric loss are important parameters in the selection of materials for device application. The dielectric constant \u0026epsilon;\u0026apos; is evaluated from the equation,\u003c/p\u003e\n\u003cdiv id=\"Equ1\" class=\"Equation\"\u003e\n \u003cdiv class=\"EquationNumber\"\u003e\u003cimg src=\"data:image/png;base64,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\"\u003e\u003c/div\u003e\n\u003c/div\u003e\n\u003cp\u003eWhere C is the capacitance (F) of the crystalline sample, d is the thickness (m) of the sample, \u0026epsilon;\u003csub\u003e0\u003c/sub\u003e is the permittivity of free space (\u0026epsilon;\u003csub\u003e0\u003c/sub\u003e\u0026thinsp;=\u0026thinsp;8.85 \u0026times; 10\u0026thinsp;\u0026minus;\u0026thinsp;12 Fm\u003csup\u003e\u0026minus;\u0026thinsp;1\u003c/sup\u003e) and A is the area (m\u003csup\u003e2\u003c/sup\u003e) of the cross section of sample.\u003c/p\u003e\n\u003cp\u003eThe imaginary part of the dielectric loss (\u0026epsilon;\u0026quot;) at the various frequencies was calculated using the measured conductance values (G) from the relation,\u003c/p\u003e\n\u003cdiv id=\"Equ2\" class=\"Equation\"\u003e\n \u003cdiv class=\"EquationNumber\"\u003e\u003cimg src=\"data:image/png;base64,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\"\u003e\u003c/div\u003e\n\u003c/div\u003e\n\u003cp\u003eWhere G is the dc conductance of the sample, and \u0026omega; (=\u0026thinsp;2\u0026pi;f) is the angular frequency. The dielectric loss tan\u0026delta; was calculated from the relation,\u003c/p\u003e\n\u003cdiv id=\"Equ3\" class=\"Equation\"\u003e\n \u003cdiv class=\"EquationNumber\"\u003e\u003cimg src=\"data:image/png;base64,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\"\u003e\u003c/div\u003e\n\u003c/div\u003e\n\u003cp\u003eThe alternating current (ac) conductivity \u0026sigma;ac is calculated using the relation,\u003c/p\u003e\n\u003cdiv id=\"Equ4\" class=\"Equation\"\u003e\n \u003cdiv class=\"EquationNumber\"\u003e\u003cimg src=\"data:image/png;base64,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\"\u003e\u003c/div\u003e\n\u003c/div\u003e\n\u003cp\u003ewhere f is the frequency (Hz) of the applied a.c. field.\u003c/p\u003e\n\u003cp\u003eThe dielectric behaviour is frequency dependant as well as temperature dependent. At lower temperature the mobility of ions is very low and so is the conductivity, resulting a lower value of capacitance. With temperature, the mobility of charge carriers increases, resulting the increase in space charge polarization and capacitance both. The capacitance is increases with temperature and it decreases with increasing frequency for SnSe nanoparticles as shown in Fig. \u003cspan class=\"InternalRef\"\u003e2\u003c/span\u003e. Variation of dielectric loss with frequency at different temperature shows in Fig. \u003cspan class=\"InternalRef\"\u003e3\u003c/span\u003e. Dielectric loss tan\u0026delta;, decreases with increasing frequency and it decreases consistently with temperature for SnSe nanoparticles. For many materials it has been observed that the dielectric loss decreases as frequency increases [13, 14]. The response of the normal materials to applied fields depends on the frequency of the applied fields. In fact, polarization of material does not respond instantaneously to an applied field so the permittivity is often treated as a complex function of frequency.\u003c/p\u003e\n\u003cp\u003eFrom Fig. \u003cspan class=\"InternalRef\"\u003e4\u003c/span\u003e, dielectric constant is observed to be high at lower frequency and it systematically decreases with increasing frequency up to 300 kHz and then after it nearly becomes frequency independent for these synthesis nanoparticles. The dielectric constant of solids is known to consist of contribution from electronic, ionic, dipolar and space charge polarization exhibits itself prominently at lower frequency. This polarization is known to arise from defects or impurities present, grain boundaries and also due to creation and distribution of dipoles either within the bulk or at the surface of the nanoparticles[15, 16]. Hence, the higher values of the dielectric constant at lower frequency in the present investigation may be because of a large amount of space charge polarization [17, 18].\u003c/p\u003e\n\u003cp\u003eLess frequency dependence value of \u0026epsilon;\u0026apos; is taken as static dielectric constant. This indicates the probable presence of ionic and electric polarization. Since, the concentration of nanoparticles defects controlling the space charge polarization is negligible. The dispersion of \u0026epsilon;\u0026apos; with frequency can be attributed to the Maxwell- Wagner type interfacial polarization i.e. the fact that in homogeneities give rise to a frequency dependence of conductivity because charge carriers accumulate at the boundaries of less conducting regions, thereby creating interfacial polarization.\u003c/p\u003e\n\u003cp\u003eThe temperature is also found to exhibit an interesting influence on the dielectric properties. The value of \u0026epsilon;\u0026apos; decreases with temperature for the grown nanoparticles. From the Fig.\u0026nbsp;\u003cspan class=\"InternalRef\"\u003e4\u003c/span\u003e shows that at low temperatures the variation in dielectric constant is much less frequency dependant, while at higher temperatures the increment in dielectric constant is stronger and much more frequency dependant. This is due to lattice expansion, polarizability of the constituent ions due to increase of atomic polarizability [19]. The changes in \u0026epsilon;\u0026apos; with temperature are of similar nature at all the frequencies.\u003c/p\u003e\n\u003cp\u003eFigure \u003cspan class=\"InternalRef\"\u003e5\u003c/span\u003e shows variation of real part of dielectric constant with frequency. The change in imaginary part of dielectric constant with frequency is shown in Fig.\u0026nbsp;\u003cspan class=\"InternalRef\"\u003e6\u003c/span\u003e and indicates that as the frequency increases the value of imaginary part of the dielectric constant decreases. And also it decreases with temperature for SnSe nanoparticles. The observed decrease in \u0026epsilon;\u0026quot; values with frequency and decrease in \u0026epsilon;\u0026quot; with temperature, which are the common features of many other compositions and therefore explained on similar arguments as for dielectric constant \u0026epsilon;\u0026apos;.\u003c/p\u003e"},{"header":"V.\tCONCLUSION","content":"\u003cp\u003eSynthesis of tin selenide and tin selenide composite from tin and selenium elements by chemical precipitation is a very simple room temperature process with relatively short reaction time. We have been grown successfully good crystalline dimension of SnSe nanoparticles using chemical precipitation method. These nanoparticles are used for device application purpose. The dielectric properties i.e. capacitance (C), dielectric constant (ε'), dielectric loss tanδ, real and imaginary dielectric constant (ε\") are measured and represented as a function of frequency and temperature.\u003c/p\u003e"},{"header":"Declarations","content":"\u003ch2\u003eAuthor Contribution\u003c/h2\u003e\u003cp\u003eFruitful discussion in Bodyframing of the article\u003c/p\u003e\u003ch2\u003e \u003cspan type=\"SmallCaps\" class=\"SmallCaps\" name=\"Emphasis\"\u003eAcknowledgements\u003c/span\u003e:\u003c/h2\u003e \u003cp\u003eAuthors are thankful to UGC New Delhi, for sanctioning major research project to G. K. Solanki for providing facility for this presented work.\u003c/p\u003e"},{"header":"References","content":"\u003col\u003e\n \u003cli\u003eC.S. Yang, Q. Liu, S.M. Kauzlarich, Chem. Mater. \u003cstrong\u003e12\u003c/strong\u003e (2000) 983.\u003c/li\u003e\n \u003cli\u003eP. Zhang, L. Gao, Langmuir \u003cstrong\u003e19\u003c/strong\u003e (2003) 208.\u003c/li\u003e\n \u003cli\u003eS. Schlecht, L. Kienle, Inorg. Chem. \u003cstrong\u003e40\u003c/strong\u003e (2001) 5719.\u003c/li\u003e\n \u003cli\u003eC. Nayral, T. Ould-Ely, A. Maisonnat, B. Chaudret, P. Fau, L. Lescouzeres, A. Peyre-Lavigne, Adv. Mater. \u003cstrong\u003e11\u003c/strong\u003e (1999) 61.\u003c/li\u003e\n \u003cli\u003eH. Natter, M. Schmelzer, R. Hempelmann, J. Mater. Res. \u003cstrong\u003e13\u003c/strong\u003e (1998) 1186.\u003c/li\u003e\n \u003cli\u003eK.W. Park, J.H. Choi, B.K. Kwon, S.A. Lee, Y.E. Sung, H.Y. Ha, S.A. Hong, H. Kim, A. Wieckowski, J. Phys. Chem. B\u003cstrong\u003e\u0026nbsp;106\u003c/strong\u003e (2002) 1869.\u003c/li\u003e\n \u003cli\u003eY. Liu, C. Zheng, W. Wang, C. Yin, G. Wang, Adv. Mater. \u003cstrong\u003e13\u003c/strong\u003e (2001) 1883.\u003c/li\u003e\n \u003cli\u003eL.S. Price, I.P. Parkin, M.N. Field, A.M.E. Hardy, R.J.H. Clark, T.G. Hibbert, K.C. Molloy, J. Mater. Chem. \u003cstrong\u003e10\u003c/strong\u003e (2000) 527.\u003c/li\u003e\n \u003cli\u003eU. Simon, R. Flesch, H. Wiggers, G. Schon, G. Schmid, J. Mater. Chem. \u003cstrong\u003e8\u003c/strong\u003e (1998) 517.\u003c/li\u003e\n \u003cli\u003eSharma J., Kumar S., Journal of Ovonic Research, \u003cstrong\u003e6(1)\u003c/strong\u003e (2010) 35- 44.\u003c/li\u003e\n \u003cli\u003eWu X., Yang E.S. and Evans H.L., J. Appl. Phys, \u003cstrong\u003e68\u003c/strong\u003e (1990) 2845.\u003c/li\u003e\n \u003cli\u003eChampness C.H. and Clark W.R., Appl. Phys. Lett., \u003cstrong\u003e56\u0026nbsp;\u003c/strong\u003e(1990) 1104.\u003c/li\u003e\n \u003cli\u003eParekh B.B. and Joshi M.J., Cryst. Res and Technol., \u003cstrong\u003e42\u003c/strong\u003e (2007) 127\u0026ndash;129.\u003c/li\u003e\n \u003cli\u003eParekh B.B., Vyas P.M., Vasant Sonal R. and Joshi M.J., Bull. Mater Sci., \u003cstrong\u003e31\u003c/strong\u003e (2008) 143-147.\u003c/li\u003e\n \u003cli\u003eMaxwell J.C., Electricity and Magnetism, New York: Oxford Uni. Press, \u003cstrong\u003e1\u003c/strong\u003e (1973) 828.\u003c/li\u003e\n \u003cli\u003eWagner K.W., Am. Phys., \u003cstrong\u003e40\u003c/strong\u003e (1973) 817.\u003c/li\u003e\n \u003cli\u003eRao K.V. and Smakula A., J. Appl. Phys., \u003cstrong\u003e37\u003c/strong\u003e (1966) 319 \u0026ndash; 321.\u003c/li\u003e\n \u003cli\u003eSastry S.S., Satyanandam G., Subrahmanyan A. and Murthy V.R.K., Phys. Stat. Solidi, \u003cstrong\u003e105\u003c/strong\u003e, (1988) K71.\u003c/li\u003e\n \u003cli\u003eSmyth C.P., Dielectric Behaviour and Structure, John-Willey \u0026amp; Sons, New York, \u003cstrong\u003e132\u003c/strong\u003e (1953).\u003c/li\u003e\n\u003c/ol\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":true,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":false,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"SnSe nanoparticles, chemical precipitaton mehod and dielectric constant","lastPublishedDoi":"10.21203/rs.3.rs-5841511/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-5841511/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eIn this paper of chemical precipitation method to prepared SnSe nanoparticles through directly mixed Sodium selenosulfate solution (Na\u003csub\u003e2\u003c/sub\u003eSeSO\u003csub\u003e3\u003c/sub\u003e) in selenium chloride solution (SnCl\u003csub\u003e2\u003c/sub\u003e·2H\u003csub\u003e2\u003c/sub\u003eO) by drop wise. We investigated the dielectric properties of Tin Selenide (SnSe) nanoparticles obtained by chemical precipitation method in deionized water. Chemical composition of grown powder is studied with the help of EDAX. Dielectric properties of tin selenide nano particles showed strong indication of frequency and temperature dependence of capacitance (C), dielectric constant (K), dielectric loss (tanδ), real and imaginary part of dielectric constant (ε' and ε\") over the frequency range 100 Hz to 1M Hz using LCR meter model 4284A and temperature ranges 303 to 523 K. In this investigation, dielectric constant is observed to be high at lower frequency and it systematically decreases with increasing frequency up to 600 kHz and then after it nearly becomes frequency independent while dielectric loss tanδ decreases with temperature and frequency.\u003c/p\u003e","manuscriptTitle":"Dielectric Properties of Tin Selenide Nanoparticles","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-02-05 11:15:13","doi":"10.21203/rs.3.rs-5841511/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"e0e9c652-2fe9-41b0-8f7c-ea86e99a8fce","owner":[],"postedDate":"February 5th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":43537810,"name":"Physical sciences/Nanoscience and technology/Nanoscale materials"},{"id":43537811,"name":"Physical sciences/Nanoscience and technology/Other nanotechnology"}],"tags":[],"updatedAt":"2025-02-05T11:15:13+00:00","versionOfRecord":[],"versionCreatedAt":"2025-02-05 11:15:13","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-5841511","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-5841511","identity":"rs-5841511","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}