High-performance photodetector of Au-MgO/PS nanostructure manufactured via Pulsed laser ablation Technique

This work focuses on photodetector Au:MgO nano-particles (NPs) have been prepared by laser ablation at various laser energies then deposited on porous-Si (PS). PS are produced with the use of the photo-electrochemical etching (PECE) approach for n-type crystalline Si (c-Si) wafers of (100) orientation. XRD, scanning electron Microscope (SEM), UV-visible Spector-photometer and electrical characteristics that have been utilized for characterizations of products. The photo-detector measurements, the spectral responsivity curves inclusive three regions; the first peak was due to absorption of the ultraviolet light by Au:MgO NPs. The second peak corresponding to the absorption of the visible light with porous silicon layer and the third peak to absorption edge of the Si substrate. The higher responsivity of Au:MgO NPs/PS photo-detector were found to be 3.29 A/W for specimen prepared at laser energy 800 mJ/pulse.