Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor

Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor Tanjim Rahman, Trupti Ranjan Lenka, Mano Bala Sankar Muthu, Injamamul Hoque Emu, and 2 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-6532274/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 05 Jun, 2025 Read the published version in Microsystem Technologies → Version 1 posted 12 You are reading this latest preprint version Abstract In this article, a novel recessed bridge-gate engineered quaternary InAlGaN/GaN HEMT is proposed for emerging electronics applications. The In content is fixed to 5% and Al content to 27.5% to create two-dimensional electron gas (2DEG) at the heterointerface of In0.05Al0.275GaN/GaN. The 2DEG created at the heterointerface is of the order of 10 13 cm-2. The device has undergone analysis of DC characteristics and small-signal AC characteristics using Silvaco TCAD simulations. The DC characteristics result in threshold voltage of-1V, and saturated drain current of 0.37 A/mm. Lattice heat thermal modeling is carried out with the DC characteristics to understand the device behavior during self-heating effects. The RF characteristics obtained from AC simulations include cutoff frequency (ft) of 8 GHz and maximum frequency of oscillation (fmax) of 30 Hz. Maximum stable gain (Gms) up to 50 GHz is obtained where the HEMT is unconditionally stable. The proposed HEMT is suitable for power electronics and RF applications. Bridge-Gate GaN HEMT InAlGaN Nanoelectronics Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 05 Jun, 2025 Read the published version in Microsystem Technologies → Version 1 posted Editorial decision: Revision requested 06 May, 2025 Reviews received at journal 06 May, 2025 Reviews received at journal 05 May, 2025 Reviews received at journal 05 May, 2025 Reviewers agreed at journal 29 Apr, 2025 Reviewers agreed at journal 29 Apr, 2025 Reviewers agreed at journal 29 Apr, 2025 Reviewers agreed at journal 29 Apr, 2025 Reviewers invited by journal 28 Apr, 2025 Editor assigned by journal 28 Apr, 2025 Submission checks completed at journal 28 Apr, 2025 First submitted to journal 25 Apr, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-6532274","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":449826407,"identity":"575cece1-323d-423c-96d2-5ea33a7382c7","order_by":0,"name":"Tanjim Rahman","email":"","orcid":"","institution":"Texas Tech University","correspondingAuthor":false,"prefix":"","firstName":"Tanjim","middleName":"","lastName":"Rahman","suffix":""},{"id":449826408,"identity":"38a1fde4-0eb8-4234-9e19-7ffd3d285358","order_by":1,"name":"Trupti Ranjan Lenka","email":"","orcid":"","institution":"Texas Tech University","correspondingAuthor":false,"prefix":"","firstName":"Trupti","middleName":"Ranjan","lastName":"Lenka","suffix":""},{"id":449826409,"identity":"b5582739-3ee4-49d2-b9d5-c7bb2ebea955","order_by":2,"name":"Mano Bala Sankar Muthu","email":"","orcid":"","institution":"Texas Tech University","correspondingAuthor":false,"prefix":"","firstName":"Mano","middleName":"Bala Sankar","lastName":"Muthu","suffix":""},{"id":449826410,"identity":"4c78a153-de57-4c6c-be99-ecffcd3029d2","order_by":3,"name":"Injamamul Hoque Emu","email":"","orcid":"","institution":"Texas Tech University","correspondingAuthor":false,"prefix":"","firstName":"Injamamul","middleName":"Hoque","lastName":"Emu","suffix":""},{"id":449826411,"identity":"32b1919f-327d-4ca8-96f4-f58353eb2720","order_by":4,"name":"Uriel Ramirez","email":"","orcid":"","institution":"Texas Tech University","correspondingAuthor":false,"prefix":"","firstName":"Uriel","middleName":"","lastName":"Ramirez","suffix":""},{"id":449826412,"identity":"eb776e8a-1b20-4d51-9346-2e2efaf4bac3","order_by":5,"name":"Hieu Pham Trung Nguyen","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA8ElEQVRIiWNgGAWjYBACg8NAgvEPQ2IDmFsBEZUgrKWNoRCi5YyBBGEtByBaKsFaGNuI0XKc+ZgESMv8iBzDx4Xz/tQZHGA+eJsHjxb7w2xpEkC/5G68kWNsPHObgYTBAbZka3xaDA7zmEkwNgC1zMgxk+YFa+Exk8avhf8bSEs6UIv5b945IC383who4WEDaUmeL5FjxszbALaFjYAWNmOLxAaJ5A08z4qleY4ZS84EiljOwafl/OGHNz422CTOb0/e+JmnRo6f73jzwxtv8GgBgwRgRBgc4DCA8JgJKYcB+Qb2B8SqHQWjYBSMghEGAOWLSzrNUuCmAAAAAElFTkSuQmCC","orcid":"","institution":"Texas Tech University","correspondingAuthor":true,"prefix":"","firstName":"Hieu","middleName":"Pham Trung","lastName":"Nguyen","suffix":""}],"badges":[],"createdAt":"2025-04-26 03:08:07","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-6532274/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-6532274/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1007/s00542-025-05890-5","type":"published","date":"2025-06-05T15:57:25+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":84242709,"identity":"0c1df59f-80b2-4ccc-891a-bee3a0342596","added_by":"auto","created_at":"2025-06-09 16:11:45","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":904442,"visible":true,"origin":"","legend":"","description":"","filename":"Lenkaetal.pdf","url":"https://assets-eu.researchsquare.com/files/rs-6532274/v1_covered_a28b5b4a-eada-4f80-967e-1b00e761e086.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"microsystem-technologies","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"mite","sideBox":"Learn more about [Microsystem Technologies](http://link.springer.com/journal/542)","snPcode":"542","submissionUrl":"https://submission.nature.com/new-submission/542/3","title":"Microsystem Technologies","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"Bridge-Gate, GaN, HEMT, InAlGaN, Nanoelectronics","lastPublishedDoi":"10.21203/rs.3.rs-6532274/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-6532274/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"In this article, a novel recessed bridge-gate engineered quaternary InAlGaN/GaN HEMT is proposed for emerging electronics applications. The In content is fixed to 5% and Al content to 27.5% to create two-dimensional electron gas (2DEG) at the heterointerface of In0.05Al0.275GaN/GaN. The 2DEG created at the heterointerface is of the order of 10 13 cm-2. The device has undergone analysis of DC characteristics and small-signal AC characteristics using Silvaco TCAD simulations. The DC characteristics result in threshold voltage of-1V, and saturated drain current of 0.37 A/mm. Lattice heat thermal modeling is carried out with the DC characteristics to understand the device behavior during self-heating effects. The RF characteristics obtained from AC simulations include cutoff frequency (ft) of 8 GHz and maximum frequency of oscillation (fmax) of 30 Hz. Maximum stable gain (Gms) up to 50 GHz is obtained where the HEMT is unconditionally stable. The proposed HEMT is suitable for power electronics and RF applications.","manuscriptTitle":"Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-04-30 23:13:27","doi":"10.21203/rs.3.rs-6532274/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"Revision requested","date":"2025-05-06T17:00:27+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2025-05-06T12:16:13+00:00","index":"hide","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2025-05-05T11:33:50+00:00","index":"hide","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2025-05-05T07:32:20+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"185447523321852749033082718491827931390","date":"2025-04-29T17:03:08+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"165929812818686571487384502511083503729","date":"2025-04-29T05:27:52+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"160218498233322991020498503347969653359","date":"2025-04-29T05:01:18+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"313490369360150475460637794776822969189","date":"2025-04-29T04:19:52+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2025-04-28T18:26:42+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2025-04-28T18:19:05+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2025-04-28T12:46:23+00:00","index":"","fulltext":""},{"type":"submitted","content":"Microsystem Technologies","date":"2025-04-26T02:56:08+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"microsystem-technologies","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"mite","sideBox":"Learn more about [Microsystem Technologies](http://link.springer.com/journal/542)","snPcode":"542","submissionUrl":"https://submission.nature.com/new-submission/542/3","title":"Microsystem Technologies","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"fe7b3a53-c90f-4762-a1c6-ada5bb6df64e","owner":[],"postedDate":"April 30th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"published-in-journal","subjectAreas":[],"tags":[],"updatedAt":"2025-06-09T16:06:14+00:00","versionOfRecord":{"articleIdentity":"rs-6532274","link":"https://doi.org/10.1007/s00542-025-05890-5","journal":{"identity":"microsystem-technologies","isVorOnly":false,"title":"Microsystem Technologies"},"publishedOn":"2025-06-05 15:57:25","publishedOnDateReadable":"June 5th, 2025"},"versionCreatedAt":"2025-04-30 23:13:27","video":"","vorDoi":"10.1007/s00542-025-05890-5","vorDoiUrl":"https://doi.org/10.1007/s00542-025-05890-5","workflowStages":[]},"version":"v1","identity":"rs-6532274","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-6532274","identity":"rs-6532274","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}