A High-Performance All-Silicon Photodetector Enabling Telecom-Wavelength Detection at Room Temperature

Photonic integrated circuits (PICs) are crucial for advancing optical communications, promising substantial gains in data transmission speed, bandwidth, and energy efficiency compared to conventional electronics[1]. Telecom-wavelength photodetectors, operating near 1550 nm, are indispensable in PICs, where they enable the sensitive and low-noise conversion of optical signals to electrical signals for efficient data processing. While silicon is ideal for passive optical components, its limited absorption in the optical telecommunication range (1260-1625 nm) typically necessitates integrating an alternative material, such as germanium[2], for photodetection — a process that introduces significant fabrication challenges[3]. Here, we present a high-performance, all-silicon photodetector, grating- and waveguide-coupled, which operates at room temperature within the optical telecom C band. By introducing deep-level impurities into silicon at concentrations close to the solid-solubility limit, we enable efficient sub-bandgap absorption without compromising recombination carrier lifetimes and mobilities. This detector achieves a responsivity of 0.56 A/W, a quantum efficiency of 44.8%, a bandwidth of 5.9 GHz, and a noise-equivalent power of 4.2×10-10 W/Hz¹/² at 1550 nm, fulfilling requirements for telecom applications. Our approach provides a scalable and cost-effective solution for the monolithic integration of telecom-wavelength photodetectors into silicon-based PICs, advancing the development of compact photonic systems for modern communication infrastructures.