Comparison of Analog Performance of AlN/β-Ga2O3 HEMT by Variation in Dielectric Materials

In the present paper, a high electron mobility transistor based on β-Gα 2 O 3 material (BGO-HEMT) with different dielectrics (Si 3 N 4 , Al 2 O 3 , and HfO 2 ) at the interface of aluminum nitride (AlN) and the gate is demonstrated. The device has a 10nm AlN layer with 50 nm barrier width, 50nm gate-length, and a value of 5 nm as gate-to-barrier thickness.A highly doped n+ material with a wider gap in between ohmic contact-barrier layers reveals the proposed device's novel traits. The performance is computd in terms of transfer characteristic, transconductance, gate capacitance, 2 nd , and 3 rd order transconductance values. The proposed structure reduced the dynamic & access resistance and provided a high gm value equal to 0.15S/µm,drain current density value of 650 A/mm (maximum) at V ds = 5 V. In the future, the proposed device can be utilized in high power radio frequency and microwave applications.