Effect of Er, Si, Hf, Nb Additives on the Thermal Stability of Microstructure, Electrical Resistivity and Microhardness of Fine-Grained Aluminum Alloys Al-0.25%Zr

The conductor aluminum alloys Al-0.25wt.%Zr doped additionally with Х = Er, Si, Hf, and Nb were the objects of investigations. The fine-grained microstructure in the alloys was formed by Equal Channel Angular Pressing and Rotary Swaging. The thermal stability of the microstructure, specific electrical resistivity, and microhardness of the novel conductor aluminum alloys was investigated. The mechanisms of nucleation of the Al3(Zr,X) secondary particles during annealing the fine-grained aluminum alloys were determined using Jones-Mehl-Avrami-Kolmogorov equation. Using Zener equation, the dependencies of the mean secondary particle sizes on the annealing time were obtained on the base of analysis of the data on the grain growth in the aluminum alloys. The secondary particle nucleation during long-time low-temperature annealing (300 оC, 1000 hrs) was shown to go preferentially at the cores of the lattice dislocations. The Al-0.25%Zr-0.25%Er-0.20%Hf-0.15%Si alloy subjected to long-time annealing at 300 оC has the optimal combination of the microhardness and electrical conductivity (59.8%IACS, Hv = 480 ± 15 MPa).