High-temperature helical edge states in BiSbTeSe2/graphene van der Waals heterostructure

High-temperature helical edge states in BiSbTeSe2/graphene van der Waals heterostructure | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article High-temperature helical edge states in BiSbTeSe 2 /graphene van der Waals heterostructure Yoichi Tanabe, Ngoc Han Tu, Ming-Chun Jiang, Yiling Chiew, Mitsutaka Haruta, and 9 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7079935/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract Van der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential and the band inversion driven by enhanced spin-orbit interaction (SOI) through band hybridization enables us to realize a two-dimensional topological insulator (2D-TI). Here we report the realization of graphene 2D-TIs by epitaxial growth of three-dimensional topological insulator (3D-TI) BiSbTeSe 2 ultrathin films on graphene. Increasing the thickness of the BiSbTeSe 2 films from 2 nm to 9 nm enhances the SOI on graphene and alters the electronic state from a trivial Kekulé insulator to a 2D-TI. Nonlocal transport reveals the helical edge conduction that survives up to 200 K. Our graphene 2D-TI is stable and easy to make electrical contacts, and it is of high quality. It offers various applications including spin-current conversion and platforms for Majorana fermions in junctions with superconductors. Physical sciences/Materials science/Condensed-matter physics/Topological matter/Topological insulators Physical sciences/Materials science/Nanoscale materials/Graphene/Electronic properties and devices Full Text Additional Declarations There is NO Competing Interest. Supplementary Files SupplementaryinformationvdWTIsubver.docx Supplementary information of High-temperature helical edge states in BiSbTeSe2/graphene van der Waals heterostructur Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7079935","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":496012213,"identity":"72707807-945c-482f-8471-4973d5baf36b","order_by":0,"name":"Yoichi Tanabe","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAvUlEQVRIiWNgGAWjYJACZgYGGxibjbByHoiWNNK1HCbBUfbsZw9+Lqg4L2dw/gDjhx8MfHmEbeHJS5aecea2scGNBGbJHga2YiIclmMgzdt2O3HDDQYGaaBfEhsIauF/Y/yb99+5xA3nDzD/Jk6LRI6ZNG/DgcQNBxLYiLTlxhsz6xnHko0lbyS2WfYYEOEX9v4c49sFNXZyfOcPH77xo+IY4RBDAoxAJxkcSyBFCxjUkK5lFIyCUTAKhj0AAGY4Ns0tx3t5AAAAAElFTkSuQmCC","orcid":"","institution":"Okayama University of Science","correspondingAuthor":true,"prefix":"","firstName":"Yoichi","middleName":"","lastName":"Tanabe","suffix":""},{"id":496012214,"identity":"f3626327-44d5-4f2c-86be-2b939b895907","order_by":1,"name":"Ngoc Han Tu","email":"","orcid":"","institution":"RIKEN","correspondingAuthor":false,"prefix":"","firstName":"Ngoc","middleName":"Han","lastName":"Tu","suffix":""},{"id":496012215,"identity":"0cb787f1-49b2-4d35-9c0b-9bc168e8ff00","order_by":2,"name":"Ming-Chun Jiang","email":"","orcid":"https://orcid.org/0000-0003-1816-4938","institution":"RIKEN Center for Emergent Matter Science","correspondingAuthor":false,"prefix":"","firstName":"Ming-Chun","middleName":"","lastName":"Jiang","suffix":""},{"id":496012216,"identity":"58c42e70-33fb-451f-b8c9-3f33611f3243","order_by":3,"name":"Yiling Chiew","email":"","orcid":"","institution":"RIKEN Center for Emergent Matter Science","correspondingAuthor":false,"prefix":"","firstName":"Yiling","middleName":"","lastName":"Chiew","suffix":""},{"id":496012217,"identity":"70a0e221-b516-4485-8796-6e497a29414f","order_by":4,"name":"Mitsutaka Haruta","email":"","orcid":"","institution":"Kyoto University","correspondingAuthor":false,"prefix":"","firstName":"Mitsutaka","middleName":"","lastName":"Haruta","suffix":""},{"id":496012218,"identity":"92b2871d-f505-48c4-8d11-9a1468ea146a","order_by":5,"name":"Kiyohiro Adachi","email":"","orcid":"","institution":"RIKEN","correspondingAuthor":false,"prefix":"","firstName":"Kiyohiro","middleName":"","lastName":"Adachi","suffix":""},{"id":496012219,"identity":"f95e5c60-44a8-4489-a067-1696aeb6ac59","order_by":6,"name":"David Pomaranski","email":"","orcid":"","institution":"The University of Tokyo","correspondingAuthor":false,"prefix":"","firstName":"David","middleName":"","lastName":"Pomaranski","suffix":""},{"id":496012220,"identity":"5529e679-5ec6-4ea4-822b-1a1799a84b1f","order_by":7,"name":"Ryo Ito","email":"","orcid":"https://orcid.org/0000-0002-5349-3481","institution":"RIKEN","correspondingAuthor":false,"prefix":"","firstName":"Ryo","middleName":"","lastName":"Ito","suffix":""},{"id":496012221,"identity":"c4101f37-b60b-4559-b201-8c3c633a7878","order_by":8,"name":"Yuya Shimazaki","email":"","orcid":"https://orcid.org/0000-0002-5315-6813","institution":"RIKEN","correspondingAuthor":false,"prefix":"","firstName":"Yuya","middleName":"","lastName":"Shimazaki","suffix":""},{"id":496012222,"identity":"d68f9ed0-4891-440b-920e-1a3aa030dcb1","order_by":9,"name":"Daisuke Hashizume","email":"","orcid":"https://orcid.org/0000-0001-7152-4408","institution":"RIKEN","correspondingAuthor":false,"prefix":"","firstName":"Daisuke","middleName":"","lastName":"Hashizume","suffix":""},{"id":496012223,"identity":"431f0491-72e2-4fe3-a256-7f76a1c7f948","order_by":10,"name":"Xiuzhen Yu","email":"","orcid":"https://orcid.org/0000-0003-3136-7289","institution":"RIKEN","correspondingAuthor":false,"prefix":"","firstName":"Xiuzhen","middleName":"","lastName":"Yu","suffix":""},{"id":496012224,"identity":"c70104e1-8208-44e9-810a-eadbfdc430dc","order_by":11,"name":"Guang-Yu Guo","email":"","orcid":"https://orcid.org/0000-0003-3097-0916","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Guang-Yu","middleName":"","lastName":"Guo","suffix":""},{"id":496012225,"identity":"3a6d5b34-bd33-4264-80f8-841c408a3861","order_by":12,"name":"Ryotaro Arita","email":"","orcid":"https://orcid.org/0000-0001-5725-072X","institution":"The University of Tokyo","correspondingAuthor":false,"prefix":"","firstName":"Ryotaro","middleName":"","lastName":"Arita","suffix":""},{"id":496012226,"identity":"d40960c2-35f0-4389-b964-3c10bdfa3406","order_by":13,"name":"Michihisa Yamamoto","email":"","orcid":"https://orcid.org/0000-0001-9113-6461","institution":"RIKEN","correspondingAuthor":false,"prefix":"","firstName":"Michihisa","middleName":"","lastName":"Yamamoto","suffix":""}],"badges":[],"createdAt":"2025-07-09 05:20:30","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-7079935/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7079935/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":90502550,"identity":"371d8fb3-77c2-4bbf-a4c9-f9b0f92b1130","added_by":"auto","created_at":"2025-09-03 11:59:39","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1433419,"visible":true,"origin":"","legend":"","description":"","filename":"20250709vdWTIsubver.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7079935/v1_covered_3fc16a39-81ff-4481-9953-a043e707e7d9.pdf"},{"id":90501706,"identity":"34008737-b966-48af-a2da-0a1d8e2ac0c6","added_by":"auto","created_at":"2025-09-03 11:51:37","extension":"docx","order_by":1,"title":"","display":"","copyAsset":false,"role":"supplement","size":1458743,"visible":true,"origin":"","legend":"Supplementary information of High-temperature helical edge states in BiSbTeSe2/graphene van der Waals heterostructur","description":"","filename":"SupplementaryinformationvdWTIsubver.docx","url":"https://assets-eu.researchsquare.com/files/rs-7079935/v1/a5697f5bbfc5582a813cac5e.docx"}],"financialInterests":"There is \u003cb\u003eNO\u003c/b\u003e Competing Interest.","formattedTitle":"\u003cp\u003e\u003cstrong\u003eHigh-temperature helical edge states in BiSbTeSe\u003c/strong\u003e\u003csub\u003e\u003cstrong\u003e2\u003c/strong\u003e\u003c/sub\u003e\u003cstrong\u003e/graphene van der Waals heterostructure\u003c/strong\u003e\u003c/p\u003e","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"nature-portfolio","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"","title":"Nature Portfolio","twitterHandle":"","acdcEnabled":false,"dfaEnabled":false,"editorialSystem":"ejp","reportingPortfolio":"","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-7079935/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7079935/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003e\u003cstrong\u003eVan der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential and the band inversion driven by enhanced spin-orbit interaction (SOI) through band hybridization enables us to realize a two-dimensional topological insulator (2D-TI). Here we report the realization of graphene 2D-TIs by epitaxial growth of three-dimensional topological insulator (3D-TI) BiSbTeSe\u003c/strong\u003e\u003csub\u003e\u003cstrong\u003e2\u003c/strong\u003e\u003c/sub\u003e\u003cstrong\u003e ultrathin films on graphene. Increasing the thickness of the BiSbTeSe\u003c/strong\u003e\u003csub\u003e\u003cstrong\u003e2\u003c/strong\u003e\u003c/sub\u003e\u003cstrong\u003e films from 2 nm to 9 nm enhances the SOI on graphene and alters the electronic state from a trivial Kekulé insulator to a 2D-TI. Nonlocal transport reveals the helical edge conduction that survives up to 200 K. Our graphene 2D-TI is stable and easy to make electrical contacts, and it is of high quality. It offers various applications including spin-current conversion and platforms for Majorana fermions in junctions with superconductors.\u003c/strong\u003e\u003c/p\u003e","manuscriptTitle":"High-temperature helical edge states in BiSbTeSe2/graphene van der Waals heterostructure","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-09-03 11:51:32","doi":"10.21203/rs.3.rs-7079935/v1","editorialEvents":[],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"nature-communications","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"NCOMMS","sideBox":"Learn more about [Nature Communications](http://www.nature.com/ncomms/)","snPcode":"","submissionUrl":"https://mts-ncomms.nature.com/","title":"Nature Communications","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature Communications","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"52c04aad-94ab-4d41-bfa8-c817c3330855","owner":[],"postedDate":"September 3rd, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[{"id":54132409,"name":"Physical sciences/Materials science/Condensed-matter physics/Topological matter/Topological insulators"},{"id":54132410,"name":"Physical sciences/Materials science/Nanoscale materials/Graphene/Electronic properties and devices"}],"tags":[],"updatedAt":"2025-09-03T11:51:32+00:00","versionOfRecord":[],"versionCreatedAt":"2025-09-03 11:51:32","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7079935","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7079935","identity":"rs-7079935","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}