Epitaxially-grown mode-tunable InP micro-ring lasers

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The paper studies epitaxially-grown mode-tunable indium phosphide (InP) micro-ring lasers, aiming to overcome limitations of top-down fabrication such as etching-induced sidewall roughness and poor scalability. Using an optimized micro-ring cavity design and optical pumping, the authors report room-temperature lasing with a lasing threshold of about 50 μJ cm⁻2 per pulse, and they combine experiments with comprehensive modeling to demonstrate mode engineering by tuning the vertical ring height. The work is presented as a Research Square preprint and explicitly notes it has not been peer reviewed by a journal, which limits formal validation of the findings. This paper does not explicitly discuss endometriosis or adenomyosis; it was included in the corpus via a keyword match in the upstream search index.

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Abstract

Abstract In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applications. Although top-down fabricated III-V semiconductor micro-disk and micro-ring lasers have been shown to be efficient light sources, challenges such as etching-induced sidewall roughness and poor fabrication scalability have been limiting the potential for high-density on-chip integration. Here, we demonstrate InP micro-ring lasers fabricated with a highly-scalable epitaxial growth technique. With an optimized cavity design, the optically-pumped micro-ring lasers show efficient room-temperature lasing with lasing threshold of around 50 μJ cm-2 per pulse. Remarkably, through comprehensive modelling of the micro-ring laser, we demonstrate experimentally lasing mode engineering by tuning the vertical ring height. Our work is a major step toward realizing high-density monolithic integration of III-V miniature lasers on submicron-scale optoelectronic devices.
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Epitaxially-grown mode-tunable InP micro-ring lasers | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Epitaxially-grown mode-tunable InP micro-ring lasers Wei Wen Wong, Zhicheng Su, Naiyin Wang, Chennupati Jagadish, Hark Tan This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-198944/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applications. Although top-down fabricated III-V semiconductor micro-disk and micro-ring lasers have been shown to be efficient light sources, challenges such as etching-induced sidewall roughness and poor fabrication scalability have been limiting the potential for high-density on-chip integration. Here, we demonstrate InP micro-ring lasers fabricated with a highly-scalable epitaxial growth technique. With an optimized cavity design, the optically-pumped micro-ring lasers show efficient room-temperature lasing with lasing threshold of around 50 μJ cm-2 per pulse. Remarkably, through comprehensive modelling of the micro-ring laser, we demonstrate experimentally lasing mode engineering by tuning the vertical ring height. Our work is a major step toward realizing high-density monolithic integration of III-V miniature lasers on submicron-scale optoelectronic devices. Physical sciences/Optics and photonics/Lasers, LEDs and light sources/Semiconductor lasers Physical sciences/Materials science/Materials for optics/Lasers, LEDs and light sources/Semiconductor lasers Full Text Additional Declarations There is NO Competing Interest. Supplementary Files supplementaryinformation.pdf Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. 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