Effect of Pulsed Laser Performance of ZnO / Ge / Si Photodetector Prepared by Multi methods

Effect of Pulsed Laser Performance of ZnO / Ge / Si Photodetector Prepared by Multi methods | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Effect of Pulsed Laser Performance of ZnO / Ge / Si Photodetector Prepared by Multi methods Othman Abed Fahad, Bilal K. Al-Rawi, Asmiet Ramizy This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4650772/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 08 Aug, 2024 Read the published version in Optical and Quantum Electronics → Version 1 posted 9 You are reading this latest preprint version Abstract Triple-layer heterostructure of ZnO/Ge/Si was considered for establishing photodetector devices by utilizing thermal evaporation and pulse laser deposition. The structural and optical properties were obtained using XRD, SEM, Raman spectroscopic and UV–visible spectroscopy. the XRD showed patterns of the Ge layer a closed-oriented crystalline structure and results showed that zinc oxide is polycrystalline in nature, with a cubic crystalline phase. The Raman spectroscopic investigation of Ge film the figure shows three separate peaks, In particulars are corresponded to Ge phase, E(TO + LO), A1(TO), E(TO)respectively and the Raman spectra of ZnO films showed E (LO), A (TO), E (LO) + TO, and B1 vibration modes. The optical bandgaps of Ge and ZnO nanostructures were found to be 2.8 for Ge and 3.3, 3.2, and 3.1 eV for ZNO thin film as laser pulses of 400,500,600 pulses respectively. The current–voltage characteristics of the ZnO/Ge/Si heterojunction deposited over 400, 500, and 600 pulses were examined in dark and illumination conduction .The heterojunctions showed rectifying characteristics, with 600 pulses demonstrating the best rectification factor. Using more pulse lasers improved the photodetector performance and the figure of merit. When the deposition pulse was increased from 400 pulses to 600 pulses, the responsivity increased from 8.867 A/W to 13.229 A/W. When the photodetector was produced at the ideal pulse count of 600 pulses, the detectivity (D*) and external quantum efficiency (EQE) were 5.77E + 17 Jones and 40.505%, respectively, at 405 nm. Multy Method ZnO/Ge/Si Raman analysis Photodetectore Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 08 Aug, 2024 Read the published version in Optical and Quantum Electronics → Version 1 posted Editorial decision: Revision requested 06 Jul, 2024 Reviews received at journal 06 Jul, 2024 Reviewers agreed at journal 05 Jul, 2024 Reviews received at journal 01 Jul, 2024 Reviewers agreed at journal 01 Jul, 2024 Reviewers invited by journal 01 Jul, 2024 Editor assigned by journal 28 Jun, 2024 Submission checks completed at journal 28 Jun, 2024 First submitted to journal 27 Jun, 2024 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4650772","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":323512342,"identity":"2fe99adb-0756-458e-93d2-e9d7e29d5366","order_by":0,"name":"Othman Abed Fahad","email":"","orcid":"","institution":"Ministry of Education","correspondingAuthor":false,"prefix":"","firstName":"Othman","middleName":"Abed","lastName":"Fahad","suffix":""},{"id":323512343,"identity":"0acf2499-7edc-427d-a06f-a79dd6ee0514","order_by":1,"name":"Bilal K. 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The structural and optical properties were obtained using XRD, SEM, Raman spectroscopic and UV–visible spectroscopy. the XRD showed patterns of the Ge layer a closed-oriented crystalline structure and results showed that zinc oxide is polycrystalline in nature, with a cubic crystalline phase. The Raman spectroscopic investigation of Ge film the figure shows three separate peaks, In particulars are corresponded to Ge phase, E(TO + LO), A1(TO), E(TO)respectively and the Raman spectra of ZnO films showed E (LO), A (TO), E (LO) + TO, and B1 vibration modes. The optical bandgaps of Ge and ZnO nanostructures were found to be 2.8 for Ge and 3.3, 3.2, and 3.1 eV for ZNO thin film as laser pulses of 400,500,600 pulses respectively. 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