Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging

Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging | Authorea try { document.documentElement.classList.add('js'); } catch (e) { } var _gaq = _gaq || []; _gaq.push(['_setAccount', 'G-8VDV14Y67G']); _gaq.push(['_trackPageview']); (function() { var ga = document.createElement('script'); ga.type = 'text/javascript'; ga.async = true; ga.src = ('https:' == document.location.protocol ? 'https://ssl' : 'http://www') + '.google-analytics.com/ga.js'; var s = document.getElementsByTagName('script')[0]; s.parentNode.insertBefore(ga, s); })(); Skip to main content Preprints Collections Wiley Open Research IET Open Research Ecological Society of Japan All Collections About About Authorea FAQs Contact Us Quick Search anywhere Search for preprint articles, keywords, etc. Search Search ADVANCED SEARCH SCROLL Electronics Letters This is a preprint and has not been peer reviewed. Data may be preliminary. 17 February 2025 V1 Latest version Share on Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging Authors : Junhyung Kim 0000-0002-1793-5086 [email protected] , Junhyung Jeong 0000-0003-2383-1635 , Gyejung Lee , KyuJun Cho , Jong Yul Park 0000-0003-1310-6819 , Byoung-Gue Min , Jong-Min Lee , Woojin Chang , Honggu Ji , and Dong Min Kang Authors Info & Affiliations https://doi.org/10.22541/au.173978148.80695118/v1 Published Electronics Letters Version of record Peer review timeline 352 views 180 downloads Contents Abstract Supplementary Material Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract This study examines the effect of gate recess depth on the electrical and RF performance of AlGaN/GaN high electron mobility transistors (HEMTs) before and after die-attach. Devices with greater recess depths exhibited more significant changes in transconductance, pinch-off voltage, and RF metrics, such as cut-off frequency (ft) and maximum frequency (fmax), compared to non-recessed devices. However, recessed devices also showed substantial increases in gate and drain leakage currents, indicating adverse effects of packaging-induced stresses. Supplementary Material File (el_recess_v2.docx) Download 5.78 MB File (el_recess_v2.pdf) Download 342.76 KB Information & Authors Information Version history V1 Version 1 17 February 2025 Peer review timeline Published Electronics Letters Version of Record 10 May 2025 Published Copyright This work is licensed under a Non Exclusive No Reuse License. Collection Electronics Letters Keywords gallium compounds iii-v semiconductors leakage currents packaging Authors Affiliations Junhyung Kim 0000-0002-1793-5086 [email protected] Electronics and Telecommunications Research Institute View all articles by this author Junhyung Jeong 0000-0003-2383-1635 Electronics and Telecommunications Research Institute View all articles by this author Gyejung Lee Electronics and Telecommunications Research Institute View all articles by this author KyuJun Cho Electronics and Telecommunications Research Institute View all articles by this author Jong Yul Park 0000-0003-1310-6819 Electronics and Telecommunications Research Institute View all articles by this author Byoung-Gue Min Electronics and Telecommunications Research Institute View all articles by this author Jong-Min Lee Electronics and Telecommunications Research Institute View all articles by this author Woojin Chang Electronics and Telecommunications Research Institute View all articles by this author Honggu Ji Electronics and Telecommunications Research Institute View all articles by this author Dong Min Kang Electronics and Telecommunications Research Institute View all articles by this author Metrics & Citations Metrics Article Usage 352 views 180 downloads .FvxKWukQNSOunydq8rnd { width: 100px; } Citations Download citation Junhyung Kim, Junhyung Jeong, Gyejung Lee, et al. Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging. Authorea . 17 February 2025. DOI: https://doi.org/10.22541/au.173978148.80695118/v1 If you have the appropriate software installed, you can download article citation data to the citation manager of your choice. Simply select your manager software from the list below and click Download. For more information or tips please see 'Downloading to a citation manager' in the Help menu . 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