Tunable Opto Thermal Sensor Based on HfO2 for Ultra-High Temperature Sensing | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Tunable Opto Thermal Sensor Based on HfO 2 for Ultra-High Temperature Sensing Barnali Pal, Bibhatsu Kuiri, Binoy Das, Ardhendu Sekhar Patra This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-8785245/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 11 You are reading this latest preprint version Abstract This paper is proposed a tunable opto-thermal sensor for ultra -high temperature-sensing by developing a one-dimensional (1-D) photonic crystal (PC) structure of alternating layers of Silicon-Dioxide (SiO₂), Titanium-Dioxide (TiO₂) and integrated with a single defect layer of Hafnium-Dioxide (HfO₂) based on the thermo-optic response. The sensor is analysed under high-temperature variations, where the RI changes induced by heating directly. The HfO₂ defect layer enables a sharp resonance peak within the photonic bandgap, significantly improving the detection capability. The optical behaviour of the proposed 1-D PC is modelled using the Transfer Matrix Method. Transmission and reflection spectra are computed numerically and the significance performance of the sensor are plotted such as defect layer thickness variation (−3% to +3%), Quality Factor (Q-factor), sensitivity and evaluated the numerical value. To enhance the sensing accuracy, the defect-layer thickness is optimized and the calculated Q-Factor is increased from 15.6 to 15.85. The PC demonstrates a high temperature sensitivity of approximately 0.145 nm/°C, indicating a substantial shift in resonance wavelength with the variation temperature. The results confirm that the SiO₂–TiO₂ periodic structure, combined with an optimized HfO₂ defect layer, provides a robust, thermally stable, and highly responsive platform for high-temperature PC sensing applications. Thermal Sensor Photonic Crystal Transfer Matrix Method Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Review Version 1 posted Editorial decision: Revision requested 21 Mar, 2026 Reviews received at journal 19 Mar, 2026 Reviews received at journal 19 Mar, 2026 Reviews received at journal 15 Mar, 2026 Reviewers agreed at journal 10 Mar, 2026 Reviewers agreed at journal 10 Mar, 2026 Reviewers agreed at journal 10 Mar, 2026 Reviewers invited by journal 10 Mar, 2026 Editor assigned by journal 14 Feb, 2026 Submission checks completed at journal 08 Feb, 2026 First submitted to journal 04 Feb, 2026 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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