Fabrication and Characterization of Two-Dimensional Field Effect Transistors based on Hafnium Disulfide

Fabrication and Characterization of Two-Dimensional Field Effect Transistors based on Hafnium Disulfide | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Fabrication and Characterization of Two-Dimensional Field Effect Transistors based on Hafnium Disulfide Marco Scalici, Patrizia Livreri This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7333763/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Two-dimensional field effect transistors based on transition metal dichalcogenides are emerging as promising candidates for post-silicon nanoelectronics. Hafnium disulfide (HfS$_2$) offers superior dielectric properties, enhanced environmental stability, and reduced electron-phonon coupling compared to the widely studied molybdenum disulfide (MoS 2 ). This work presents the fabrication and characterization of HfS$_2$-based FETs. The detailed substrate preparation, plasma oxidation, mechanical exfoliation, dry transfer, and nanoscale electrode patterning via electron beam lithography are discussed. Electrical characterization, including four-probe transport and temperature-dependent analyses, reveals key transport mechanisms and performance limitations.The device exhibits typical n-type behavior, with a well-defined threshold voltage of ~1.4 V, an on-state drain current exceeding 100 µA, and an off-state drain current in the femtoampere range, resulting in an I on /I off ratio above $10^6$. Output characteristics show clear drain current saturation at a drain voltage %V D higher than 1.8 V, confirming good electrostatic control and low contact resistance. The transfer characteristics are consistent across multiple sweeps and configurations, demonstrating the reproducibility and stability of the device, highlighting the potential of HfS$_{2}$ for high-performance 2D electronics. A comparative study with MoS 2 -based devices underscores the advantages and current challenges of HfS 2 , highlighting its potential for next generation low-power flexible electronics. In addition, we discuss emerging opportunities for hybrid architectures and advanced applications, paving the way for innovative uses beyond conventional transistor technologies. Physical sciences/Engineering Physical sciences/Materials science Physical sciences/Nanoscience and technology Physical sciences/Physics Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7333763","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":505010840,"identity":"90250b05-97ea-43e8-8476-b6b29b2e9914","order_by":0,"name":"Marco Scalici","email":"","orcid":"","institution":"University of Palermo","correspondingAuthor":false,"prefix":"","firstName":"Marco","middleName":"","lastName":"Scalici","suffix":""},{"id":505010841,"identity":"91c18ed7-d7a6-4651-a15d-5f4e7b16e365","order_by":1,"name":"Patrizia Livreri","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABDklEQVRIiWNgGAWjYLCCBAYJBgZ2xgYQm4cfSBwAMXCrZ4ZqYYZqkWyAasGthxmNNjgAZeDSYs5+/tiHB38s5BmYmdukKyruyRjfyD14uKCGQcYehxbLnmTmGQk8EoYNzIxtkmfOFPOY3chLODzjGG6HGRxIZmZIkJBgBGppNmxsSwBqyTE4zMOGR8v5x0AtBhL2EC3/EniMZ4C0/MOj5QbIlgSJRKCWxoeNDQk8BhJALbxtuLVYznhszJBwQCK5DaSl4RjQW2feGBye2SfBw3MAR4jxJz5m/PGnzrafvf3BwYaaBHv+9hzjzwXfbOzZG3A4DMZgQxYFxpEEDmchaUEBzFhFR8EoGAWjYKQCAOVnTUgVNtAgAAAAAElFTkSuQmCC","orcid":"","institution":"University of Palermo","correspondingAuthor":true,"prefix":"","firstName":"Patrizia","middleName":"","lastName":"Livreri","suffix":""}],"badges":[],"createdAt":"2025-08-09 12:08:14","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-7333763/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7333763/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":90335137,"identity":"d8402847-502c-4672-8160-35af0e809a9f","added_by":"auto","created_at":"2025-09-01 14:02:18","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":3740739,"visible":true,"origin":"","legend":"","description":"","filename":"2DFETScientificReportsRVPL.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7333763/v1_covered_d523c80a-37fd-4835-bf3f-10b4bc4a09b9.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Fabrication and Characterization of Two-Dimensional Field Effect Transistors based on Hafnium Disulfide","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-7333763/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7333763/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eTwo-dimensional field effect transistors based on transition metal dichalcogenides are emerging as promising candidates for post-silicon nanoelectronics. Hafnium disulfide (HfS$_2$) offers superior dielectric properties, enhanced environmental stability, and reduced electron-phonon coupling compared to the widely studied molybdenum disulfide (MoS\u003csub\u003e2\u003c/sub\u003e). This work presents the fabrication and characterization of HfS$_2$-based FETs. The detailed substrate preparation, plasma oxidation, mechanical exfoliation, dry transfer, and nanoscale electrode patterning via electron beam lithography are discussed. Electrical characterization, including four-probe transport and temperature-dependent analyses, reveals key transport mechanisms and performance limitations.The device exhibits typical n-type behavior, with a well-defined threshold voltage of ~1.4 V, an on-state drain current exceeding 100 µA, and an off-state drain current in the femtoampere range, resulting in an I\u003csub\u003eon\u003c/sub\u003e/I\u003csub\u003eoff\u003c/sub\u003e ratio above $10^6$. Output characteristics show clear drain current saturation at a drain voltage\u0026nbsp;%V\u003csub\u003eD\u003c/sub\u003e\u0026nbsp;higher than 1.8 V, confirming good electrostatic control and low contact resistance. The transfer characteristics are consistent across multiple sweeps and configurations, demonstrating the reproducibility and stability of the device, highlighting the potential of HfS$_{2}$ for high-performance 2D electronics.\u0026nbsp;\u003c/p\u003e\n\u003cp\u003eA comparative study with MoS\u003csub\u003e2\u003c/sub\u003e-based devices underscores the advantages and current challenges of HfS\u003csub\u003e2\u003c/sub\u003e, highlighting its potential for next generation low-power flexible electronics. In addition, we discuss emerging opportunities for hybrid architectures and advanced applications, paving the way for innovative uses beyond conventional transistor technologies.\u003c/p\u003e","manuscriptTitle":"Fabrication and Characterization of Two-Dimensional Field Effect Transistors based on Hafnium Disulfide","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-08-26 06:30:22","doi":"10.21203/rs.3.rs-7333763/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"119d4e61-8063-4356-beda-9cd51172b9da","owner":[],"postedDate":"August 26th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":53637315,"name":"Physical sciences/Engineering"},{"id":53637316,"name":"Physical sciences/Materials science"},{"id":53637317,"name":"Physical sciences/Nanoscience and technology"},{"id":53637318,"name":"Physical sciences/Physics"}],"tags":[],"updatedAt":"2025-09-01T13:54:02+00:00","versionOfRecord":[],"versionCreatedAt":"2025-08-26 06:30:22","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7333763","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7333763","identity":"rs-7333763","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}