{"paper_id":"33bf1a09-c4da-4cc0-be1f-eedce588f131","body_text":"Gradually Thermal Diffusing of Silver on Amorphous GeSe Thin Film; Structural and Optical Properties | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Gradually Thermal Diffusing of Silver on Amorphous GeSe Thin Film; Structural and Optical Properties M. Rashad, Ahmed F. M. EL-Mahdy, Samar Moustafa, Hesham Fares This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5005888/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 23 Oct, 2024 Read the published version in Journal of Inorganic and Organometallic Polymers and Materials → Version 1 posted 11 You are reading this latest preprint version Abstract Binary glasses of GeSe are prepared by melt quench technique. Two layers of thin film preparation have been done by the conventional thermal evaporation technique on glass substrate. GeSe with 340 ± 5 nm thickness is prepared as first layer, then thin silver layer are evaporated on top of the GeSe film. The GeSe with Ag on top of the film were annealed at different time of 30, 60, 90, and 180 and 210 min at 573 K of temperature. Subsequently, we have analyzed the films using scanning electron microscopy (SEM) and X-ray diffraction (XRD) to confirm the successful diffusion of Ag on GeSe films. XRD measurements show that as prepared Ag/GeSe have amorphous natures. Optical transmission and reflection spectra of the studied thin films are measured in the wavelength range of 200 − 2500 nm at room temperature. The optical properties of the new films were studied before and after annealing at different annealing times due to gradually thermal diffusing of Silver on GaAs. The absorption coefficient (α) as an optical constant is determined as a function of annealing times. Moreover, the values of the third-order nonlinear optical susceptibility increased with an increase of annealing temperatures due to gradually thermal diffusing of Silver. The results indicate that Ag/GeSe has great potential for various applications including optical sensors and optoelectronics. Ag GeSe Thin films structural investigations Thermal effect Optical constants Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 1. Introduction Chalcogenide GaAs is a type of amorphous semiconductor that contains germanium, arsenic, and one or more of the chalcogen elements (sulfur, selenium, or tellurium). Chalcogenide GaAs has unique optical, electrical, and thermal properties that make it suitable for various applications, such as phase-change memory, nanomedicine, and optoelectronics [ 1 ]. GaAs films can be deposited on crystalline GaAs substrates to form heterojunctions, which are junctions between two different types of semiconductors. These heterojunctions can exhibit negative differential resistance, low forward resistance, and strong current saturation, depending on the bias voltage and the state of the chalcogenide glass [ 2 ]. These films can provide a low-loss, thermally stable, and mechanically robust bonding layer for GaAs OPO elements [ 3 ]. Silver (Ag) is a metal that can diffuse into gallium arsenide (GaAs), a compound semiconductor, and form ohmic contacts or Schottky barriers, depending on the doping type and concentration of GaAs. Ag diffusion into GaAs can be achieved by various methods, such as thermal annealing, ion implantation, or laser irradiation [ 4 ]. The diffusion mechanism and depth of Ag in GaAs depend on the temperature, time, and energy of the diffusion process, as well as the initial thickness and morphology of the Ag layer [ 5 ]. This diffusion can alter the electrical, optical, and structural properties of GaAs, such as the carrier concentration, band gap, lattice constant, and defect density. It also affect the performance and reliability of GaAs-based devices, such as solar cells, light-emitting diodes, lasers, and transistors. Therefore, it is an important phenomenon to study and control for the fabrication and optimization of GaAs devices. The post-growth treatments, such as annealing, ion implantation, or laser irradiation, can also modify the structural properties of GaAs films, such as the defect density, the lattice parameter, the grain size, and the crystallinity. For example, annealing can enhance the diffusion and the recrystallization of GaAs films, reducing the defects and improving the electrical properties. Ion implantation can introduce dopants or defects into GaAs films, changing their conductivity and optical properties. The growth parameters of GaAs, such as the temperature, pressure, flux ratio, and doping, can affect the crystalline quality, the morphology, the composition, and the strain of the films[ 6 ][ 7 ]. In this study, melt quench is a tool which used to prepare GeSe binary glasses. The thermal evaporation method has been used to prepare two layers of thin films on a glass substrate. A first layer of GeSe with a thickness of 340 ± 5 nm is prepared, and on top of it, a very thin layer of evaporated silver is applied. Different temperatures of 30, 60, 90, 180, and 210 minutes at 573 K were used to anneal the GeSe with Ag on top of the film. Various structural investigations have been done using SEM and XRD. The effect of varying the annealing time on the optical properties of Ag on top of GaAs films has been done. We believe that the findings from our research could be beneficial for several implications for various fields, including material science, optoelectronics, and the development of new functional materials and devices. 2. Experimental techniques The bulk material for GeAs glasses was created using the well-known melt quenching technique using 4N pure Ge and As. A highly sensitive digital balance with an accuracy of 0.01 mg was used to measure the required amounts of the components. After the materials were measured, they were placed in a clean, cleared, fixed silica tube and heated to a constant temperature of 1273 K using a temperature controller for a full day. To ensure composite homogeneity, the tube was shaken at regular intervals during the heating process. After that, an ice bath was used to quench the tube. GeAs films were produced by a thermal evaporation process with a coating unit (HHV Auto 306). The films were applied to previously clean optically glass substrates. To get uniformly fabricated films at a distance of 25 cm above the evaporator, the substrate was placed onto a rotatable holder. The substrates were maintained at room temperature while the GeAs films were being created in a vacuum stronger than 10 − 4 Pa. The film thickness of 340 ± 5 nm was achieved by controlling the deposition rate at 4.2 nm/s using the quartz crystal thickness monitor, and verifying the film thickness using the interferometric technique. The Ag/Ge 25 Se 75 films were annealed at 573 K at different times of 30, 60, 90, 180 and 210 min. in the vacuum. X-ray diffraction (XRD) was used to examine the structural characteristics of the as-prepared films using a Philips diffractometer 1710 with a Ni-sifted CuKα source (λ = 0.15418 nm). The structure details of the films are investigated using the scanning electron microscope (SEM). Using a double-beam spectrophotometer (JASCO, V-570 UV VIS NIR), the transmittance, T, and reflectance, R, of the films were measured in the wavelength (λ) range of 200–2500 nm. 3. Results and discussion 3.1 Structural investigations As well known that, amorphous materials are difficult to characterize as a broad hump using XRD, which don’t produce sharp diffraction peaks. Therefore, Fig. 1 shows XRD of as prepared and annealed Ag/Ge 25 Se 75 films at 573 K at different annealing times of 30, 60, 90 and 210 min. For as prepared Ag/Ge 25 Se 75 films, it shows an amorphous nature without distinguish peaks. On the other hand after annealed at 573 K for 30 min., still amorphous nature with distinguish peak of GeSe 2 at 72.19 o . At increasing annealing times of 60, 90 and 210 min, six distinguish peak of GeSe 2 were appeared at 14.4 o , 29.25 o , 41.56 o , 44.72 o , 61.14 o and 72.19 o . All distinguish peak were comprised with JCPDS file No. as illustrate in Table 1 . At annealed of 573 K at 210 min. there are two peaks of silver were appeared at 79 and 82 o which are shifted to a higher values compared to the original card Ref. No. (0.1-0.87-0.719) due to many reasons such as lattice parameters, Microstructure parameter or thermal annealing which considered as the main reason of the present case. Furthermore, the average crystalline size of the thin films, D, is usually obtained[ 8 ] \\(\\:D=\\frac{0.94\\lambda\\:}{\\beta\\:cos\\theta\\:}\\) where λ is X-ray wavelength, β is the full width at half maximum (FWHM) in radiant and θ is the Bragg’s angle. Indeed the strain value, ε , is determined by the following relation[ 9 ][ 10 ] \\(\\:\\epsilon\\:=\\frac{\\beta\\:}{4tan\\theta\\:}\\) whereas the dislocation density, \\(\\:\\delta\\:\\) , was calculated according to the following equation[ 11 ] \\(\\:\\delta\\:=\\frac{1}{{D}^{2}}\\) . The calculated value of crystallite size, D, the dislocation density, \\(\\:\\delta\\:\\) , and the lattice strain, ε, were listed in Table 1 . This table shows that the values of D increase with the increasing of annealing time. This result can be explained due to the decline of lattice defects along the grain boundaries as Ag diffusion increased inside the GaAs films[ 12 ], whilst the values of \\(\\:\\delta\\:\\) and ε decrease with the increasing of annealing temperature. Table 1 Structural parameters Crystalline calculated of as prepared and annealed (Ge 25 Se 75 )Ag films at 573 K at different times of 30, 60, 90 and 210 min. Annealing time (min.) Kind of Phase h k l d. exp . d. stand Average of crystallite size for GeSe phase (D) (nm) Strain values (ɛ) × 10 − 3 (lin − 2 .m − 4 ) dislocation density δ × 10 14 (lines/m 2 ) JCPDS file No. 0 GeSe 2 315 1.308 1.30821 18.55 1.95 3.655 04-003-4149 30 GeSe 2 315 1.308 1.30821 15.88 2.28 4.99 04-003-4149 60 GeSe 2 026 1.31 1.30821 20.24 18.37 1.79 1.97 3.0714 3.7285 04-003-4149 85–0566 Se 012 2.034 2.0318 90 GeSe 2 GeSe 2 GeSe 2 110 105 315 6.088 3.038 1.309 6.07 3.0400 1.30821 21.595 20.8 1.72 1.74 2.93 2.9082 16–0080 33–0581 04-003-4149 85–0566 Se 012 2.034 2.0318 210 GeSe 2 GeSe 2 GeSe 2 020 105 315 6.174 3.052 1.309 6.15 3.0400 1.30821 23.78 32.8 1.76 1.135 3.26 1.27 16–0080 33–0581 04-003-4149 73-2087 85–0566 83-2438 Se 520 2.165 2.1653 Se 314 2.026 2.025 Se 103 1.516 1.5153 SEM images of as prepared and annealed Ag/Ge 25 Se 75 films at 573 K at different annealing times of 30, 90 and 210 min are shown Fig. 2 . The surface monographic of the as prepared films is recognized by its uniformly spherical shape. As the annealing temperature increases, the size of these small white spots increase with increasing annealed times. These spots related to gradually thermal diffusing of silver on amorphous GeSe thin film which confirm the XRD results. The average size of these spherical particles is found to be about 500 nm, whilst the diameter of the spherical particles for annealed films at 573 K at different annealing times of 30, 60, 90 and 210 min are ranging from 500 nm to 2000 nm. This phenomenon could be expounded due to the effect of the annealing time in removing the defects, and therefore the accumulation of particles is proposed to be occurred[ 13 ]. Moreover, Image J program was using for analyzing the images which shown in Fig. 3 . These analyses confirm the increasing of particles agglomeration with annealing time from 350, 550 and 700 nm due to gradually thermal diffusing of Silver. 3.2 Linear optical investigations 3.2.1 Absorption parameters Linear optical analysis aimed to assess various optical parameters and constants and forecast their possible uses. The transmittance of a medium or a material is the fraction of light that passes through the other side of the medium or the proportion of the light energy hitting it to the light going through it. The estimated values of transmittance ( T ) and reflectance ( R ) provide a simpler method for calculating important optical parameters such as optical bandgap, localized state refractive index width, and other parameters. As the light travels through any medium, it can be transmitted, reflected, or absorbed. T and R characteristics of Ag/Ge 25 Se 75 films were examined in relation to incident wavelength (λ). Figure 4 displays both T and R at different λ values from ultraviolet to near-infrared (200–2500 nm) for Ag/Ge 25 Se 75 films at 573 K at different annealing times of 30, 60, 90, 180 and 210 min. it can be seen form that figure, in the ultraviolet region (200–500 nm), T values rose considerably with λ. However, as the λ increased more, the rate of rise in T became smaller, eventually stabilizing for the remaining λ range. The Ag/Ge 25 Se 75 films at 573 K at different annealing times of 30, 60, 90, 180 and 210 min showed high transmittance values for wavelengths (500 ≤ λ ≤ 800 nm). As the annealing time went up from 30 to 210 min, the measured transmittance value also went up. In contrast, the R values of the prepared samples displayed a different pattern than T . The R values were lower throughout the examined λ range, with an average value around 4%. The annealing time shows a nonlinear variation when T or R is changed. Ag/Ge 25 Se 75 films can be used in applications that require transparent materials, such as packaging material for optoelectronic and microelectronic devices. Therefore, the estimated value of absorption coefficient (α) was calculated using[ 14 ]: $$\\:\\alpha\\:=\\frac{1}{d}ln\\left[\\frac{(1-{R}^{2})}{2T}+\\sqrt{{R}^{2}+\\frac{(1-{R}^{2})}{4{T}^{2}}}\\right]$$ 1 d : thickness, T : transmittance and R : reflectance. The absorption coefficient (α) is a measure of how well a substance can absorb light with a specific wavelength per unit length. It provides information about each absorber molecule or ion and the nature of the electronic transition. The absorption coefficient determines whether the electronic transition will occur directly or indirectly. Changes in the absorption coefficient can be attributed to annealing times of 30, 60, 90, 180 and 210 min. As shown in Fig. 5 , the value of α increases as the photon energy increases, while in the range of (0.5-2.0 eV), a shoulder is observed. As the annealing time increases, the value of α decreases. Therefore, more Ag diffuse in layer of GaAs films, which enhance the absorption of the present films. Figures 6 and 7 show the plot of (αhν) 1/2 and (αhν) 2 against the photon energy (hν) for Ag/Ge 25 Se 75 films at 573 K and different annealing times of 30, 60, 90, 180 and 210 min. The first two plots are driven using[ 15 ] : $$\\:{\\left(\\alpha\\:h\\upsilon\\:\\right)}^{r}=const.(h\\upsilon\\:-{E}_{g})$$ 2 The plots of (αhν) 1/2 and (αhν) 2 show linear relationships with photon energy at higher energy levels, indicating that Ag/Ge 25 Se 75 films at 573 K and different annealing times of 30, 60, 90, 180 and 210 min exhibit indirect optical transitions. The more fitting relation indicate that indirect transition is the majority one in these samples due to Ag in Ge 25 Se 75 which create localized states in Ge 25 Se 75 samples. The intercepts of the lines yield estimated values for the direct and indirect optical bandgap ( E g ) for the respective samples as listed in Table 1 . It is well known that the E g of a material can be affected by various factors, such as temperature, pressure, doping, and grain size, therefore it is changed due to gradually thermal diffusing of silver. The amount of light that a material absorbs at a specific wavelength is measured by its extinction coefficient. The mass extinction coefficient, molar extinction coefficient, optical extinction coefficient, and other units can be used to express it. The size, shape, composition, and structure of the material are among the physical and chemical characteristics that affect the extinction coefficient. The extension coefficient (k ex ), using an equation[ 16 ] $$\\:{k}_{ex}=\\frac{\\alpha\\:\\lambda\\:}{4\\pi\\:}$$ 3 Figure 8 depict the extension coefficient ( k ex ) versus photon energy (eV) for Ag/Ge 25 Se 75 films at 573 K and different annealing times of 30, 60, 90, 180 and 210 min. 3.2.2 Dispersion parameters The refractive index ( n ) versus the wavelength (λ) is illustrated in Fig. 7 for Ag/Ge 25 Se 75 films at 573 K and different annealing times of 30, 60, 90, 180 and 210 min, respectively was estimated from[ 17 ] $$\\:n=\\sqrt{\\frac{4R}{{(R-1)}^{2}}-{k}_{ex}^{2}}+\\frac{R+1}{R-1}$$ 4 Both k ex and n follow a similar trend to α. In the ultraviolet (UV) region, at wavelengths shorter than 275 nm (≤ 4.5 eV), their values abruptly drop from higher values before progressively increasing with additional wavelength. For Ag/Ge 25 Se 75 films, k ex values vary from 0 to 1 and get smaller as the annealing time increases. At 1000 nm, the refractive index reaches its maximum value of 6, with an average range of 2 to 6 [ 18 ]. Figures 9 and 10 illustrates the real part of the dielectric constant (ε r ) and the imaginary part of the dielectric constant ( ε i ), respectively, as a function of the wavelength (λ) for Ag/Ge 25 Se 75 films at 573 K and various annealing times of 30, 60, 90, 180 and 210 min. The values of (ε r ) and (ε i ) were derived from the equation [ 19 ]. $$\\:{\\epsilon\\:}_{r}={n}^{2}-{k}_{ex}^{2}$$ 5 $$\\:{\\epsilon\\:}_{i}=2n{k}_{ex}$$ 6 An increase in the annealing times causes minor changes in the dielectric constants of (Ge 25 Se 75 )Ag, specifically the real part (ε r ) and the imaginary part (ε i ). For the same wavelength, ε i is smaller than ε r . When wavelengths surpass 450 nm, there is a slight increase in ε i and a decrease in ε r . While ε i reaches a stable value, ε r reaches its maximum value at 1200 nm[ 19 ]. A portion of the optical energy is lost when it drops below the optical bandgap. Dispersion parameters, such as the static refractive index, dispersion energy, and single oscillator energy, can be used to quantify this lost energy. The Wemple-DiDomenico model is used to compute these parameters[ 20 ]. Figure 11 displays a graph of (n 2 -1) −1 versus (hυ) 2 for Ag/Ge 25 Se 75 films at 573 K and various annealing times of 30, 60, 90, 180 and 210 min. The experimental data was fitted to straight lines using a specific formula[ 21 ] $$\\:{({n}^{2}-1)}^{-1}=\\frac{{E}_{a}}{{E}_{d}}-\\frac{{\\left(h\\upsilon\\:\\right)}^{2}}{{E}_{o}{E}_{d}}$$ 7 $$\\:{\\epsilon\\:}_{\\infty\\:}={n}_{o}^{2}=1+\\frac{{E}_{d}}{{E}_{a}}$$ 8 Based on the slope and intercept of the straight lines, Table 2 presents the estimated values of the oscillator's average energy (E a ) and the inter-band optical transitions' average strength (E d ). Table 2 Deduced optical parameters of as prepared and annealed Ag/Ge 25 Se 75 films at 573 K at different times of 30, 60, 90 and 210 min. Annealing time (min.) E in g E di g E a E d \\(\\:{n}_{\\infty\\:}^{2}\\) \\(\\:{n}_{\\infty\\:}\\) M − 1 M − 3 \\(\\:{n}_{o}\\) \\(\\:{\\epsilon\\:}_{L}\\) \\(\\:\\frac{N}{{m}^{*}}\\) x10 50 0 2.02 3.23 1.16 4.31 4.72 2.17 3.72 2.76254 3.33467 11.12 10.08 30 1.99 2.70 1.17 3.09 3.63 1.91 2.63 1.91 2.79 7.76 6.66 60 2.26 3.16 1.13 4.81 5.26 2.29 4.26 3.34 3.59 12.86 11.97 90 2.30 3.13 1.14 5.41 5.74 2.40 4.74 3.64 3.77 14.22 13.93 180 2.16 3.21 1.07 5.08 5.74 2.40 4.74 4.13 4.14 17.10 19.76 210 2.06 3.10 1.14 4.89 5.31 2.30 4.31 3.34 3.60 12.99 12.44 Table 2 revealed that ε ∞ and no were both dependent on annealing times of 30, 60, 90, 180 and 210 min. In addition, WDD [ 22 ]states that two additional optical dispersion parameters that describe the strength of the inter-band transition are the optical spectrum moments, M − 1 and M − 3 . The following equations relate these parameters to the optical dispersion parameters E o and E d [ 23 ]: $$\\:{M}_{-1}=\\frac{{E}_{d}}{{E}_{o}},\\:{M}_{-3}=\\frac{{M}_{-1}}{{E}_{o}^{2}}$$ 9 The computed values for M-1 and M-3 are listed in Table 2 . As the annealing times increased, the values of M − 1 and M − 3 increased. When the annealing times rises, the trends of E d and E a shift in the same directions[ 24 ]. The formula based on the E o and E d parameters can be used to determine the static refractive index[ 24 ]: $$\\:{n}_{o}=\\sqrt{1+\\frac{{E}_{d}}{{E}_{a}}}$$ 10 The Ag/Ge 25 Se 75 films ratio's value of n o . In addition, the high-frequency dielectric constant and the ratio of charge carrier concentration ( N ) to the effective mass of the electron ( m* ) were determined using Sellmeier's model. The plot for Ag/Ge 25 Se 75 films in Fig. 12 shows the relationship between n 2 and λ 2 . Interestingly, the experimental data shows an amazing agreement with straight lines according to the previously mentioned equation[ 25 ]. The relationship between a transparent material's refractive index and light wavelength is represented by Sellmeier's model. Light bending as it enters or leaves a material is measured by the refractive index. An equation involving some experimentally determined coefficients is used in Sellmeier's model. If the material doesn't absorb light in that range, the formula can be used to determine the refractive index for any wavelength. We can also learn more about how light disperses, or splits into different colors, when it passes through materials using Sellmeier's model. As the annealing time increases, the value of no for Ag/Ge 25 Se 75 films decreases. In addition, the high-frequency dielectric constant and the ratio of charge carrier concentration ( N ) to the effective mass of the electron ( m* ) were determined using Sellmeier's model. The plot for Ag/Ge 25 Se 75 films in Fig. 13 shows the relationship between n 2 and λ 2 . The experimental data shows an agreement with straight lines according to the previously mentioned equation[ 14 ]. $$\\:{n}^{2}={\\epsilon\\:}_{\\infty\\:}-\\frac{{e}^{2}}{4{\\pi\\:}^{2}{\\epsilon\\:}_{o}{c}^{2}}\\frac{N}{{m}^{*}}{\\lambda\\:}^{2}$$ 11 The symbols for the high-frequency dielectric constant, vacuum permittivity, and speed of light in this equation are \\(\\:{\\:\\epsilon\\:}_{\\infty\\:}\\) , \\(\\:{\\epsilon\\:}_{o}\\) , and c, respectively. In the composite, the free carrier concentration drops to 1.37 x10 50 when the annealing time is raised. The estimated values of \\(\\:{\\epsilon\\:}_{\\infty\\:}\\) and \\(\\:\\:\\frac{N}{{m}^{*}}\\) , are listed in Table 2 , and the formula of \\(\\:{\\epsilon\\:}_{\\infty\\:\\:}={n}_{o}^{2}\\:\\) is confirmed by the estimated values of n o and \\(\\:{\\epsilon\\:}_{\\infty\\:\\:}\\) . 3.3 Nonlinear optical investigations The area of optics known as nonlinear optical studies the behavior of light in materials that respond to light's electric field in a nonlinear way. This indicates that the intensity and form of the light wave affect the material's polarization, which is a measurement of the alignment of the electric charges. Optical switching, self-focusing, frequency conversion, and optical solutions are examples of phenomena that can be produced by nonlinear optical effects. A broad range of optical applications can be made more expansible by having an understanding of the third order type of nonlinear optical susceptibility, χ(3) [ 26 ]. When a material is exposed to a strong electric field, like a laser beam, its polarization changes. This phenomenon is known as third-order nonlinear optical susceptibility. The measurement of a material's electric charge alignment is called polarization. Self-focusing, optical switching, and frequency conversion are examples of effects that can result from third-order nonlinear optical susceptibility. The material's composition and structure determine the value of third-order nonlinear optical susceptibility. The kind and concentration of atoms or molecules, the existence of flaws or contaminants, the temperature, and the light's wavelength are a few variables that may have an impact. Depending on how the material's constituents interact with the polarization and electric field, adding or removing certain elements can change the third-order nonlinear optical susceptibility. Using Miller's principle, χ(3) can be computed using [ 27 ]. \\(\\:{\\chi\\:}^{\\left(3\\right)}=\\frac{A{\\left({n}_{o}^{2}-1\\right)}^{4}}{{\\left(4\\pi\\:\\right)}^{4}}\\) , A = 1.7×10 −10 esu. (12) This equation is used to calculate the nonlinear refractive index, or n 2 , by combining the Miller principle with a single effective oscillator.[ 27 ] Table 3 lists the values of χ(3) and n 2 for (Ge 25 Se 75 )Ag films. It is evident that the computed χ(3) values decrease as the annealing time content increases. A few variables that may impact the annealing time third-order nonlinear optical susceptibility are the kind and quantity of metal ions present, the solvent's concentration and polarity, temperature, and light wavelength. Clearly, all these parameters were affected by diffusing of Ag on the GaAs films. Therefore, the change of the third order type of nonlinear optical susceptibility and the nonlinear refractive index due to gradually thermal diffusing of Ag on amorphous GeSe thin film. \\(\\:{n}_{2}=\\frac{12\\pi\\:}{{n}_{o}}{\\chi\\:}^{\\left(3\\right)}\\) (13) Conclusion XRD and SEM confirmed the amorphous nature of Ag/Ge 25 Se 75 films. SEM analysis showed Ag/Ge 25 Se 75 films that increasing of particles agglomeration with annealing time from 350, 550 and 700 nm indicated to formation of Ag on the surface of Ge 25 Se 75 films. Optical investigations showed that annealing time change of optical band gap, oscillator's average energy and the inter-band optical transitions' average strength. A few variables impact the annealing time third-order nonlinear optical susceptibility is quantity of metal ions present due to annealing time. 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Mater. Sci. Mater. Electron. , vol. 33, no. 13, pp. 9966–9975, 2022, doi: 10.1007/s10854-022-07988-2. S. H. Wemple and M. DiDomenico Jr, “Behavior of the electronic dielectric constant in covalent and ionic materials,” Phys. Rev. B , vol. 3, no. 4, p. 1338, 1971. M. Rashad, “Tuning optical properties of polyvinyl alcohol doped with different metal oxide nanoparticles,” Opt. Mater. (Amst). , vol. 105, no. March, p. 109857, 2020, doi: 10.1016/j.optmat.2020.109857. S. Yanagisawa and Y. Morikawa, “Theoretical Investigation on the Electronic Structure of the Tris-(8-hydroxyquinolinato) Aluminum/Aluminum Interface,” Jpn. J. Appl. Phys. , vol. 45, no. 1S, p. 413, Jan. 2006, doi: 10.1143/JJAP.45.413. L. Tich\\`y, H. Ticha, P. Nagels, R. Callaerts, R. Mertens, and M. Vlček, “Optical properties of amorphous As--Se and Ge--As--Se thin films,” Mater. Lett. , vol. 39, no. 2, pp. 122–128, 1999. A. A. A. Darwish, M. Rashad, A. E. Bekheet, and M. M. El-Nahass, “Linear and nonlinear optical properties of GeSe2-xSnx (0 ≤ x ≤ 0.8) thin films for optoelectronic applications,” J. Alloys Compd. , vol. 709, pp. 640–645, 2017, doi: 10.1016/j.jallcom.2016.08.280. Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 23 Oct, 2024 Read the published version in Journal of Inorganic and Organometallic Polymers and Materials → Version 1 posted Editorial decision: Revision requested 19 Sep, 2024 Reviews received at journal 16 Sep, 2024 Reviews received at journal 15 Sep, 2024 Reviews received at journal 13 Sep, 2024 Reviewers agreed at journal 06 Sep, 2024 Reviewers agreed at journal 06 Sep, 2024 Reviewers agreed at journal 06 Sep, 2024 Reviewers invited by journal 06 Sep, 2024 Editor assigned by journal 31 Aug, 2024 Submission checks completed at journal 31 Aug, 2024 First submitted to journal 30 Aug, 2024 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {\"props\":{\"pageProps\":{\"initialData\":{\"identity\":\"rs-5005888\",\"acceptedTermsAndConditions\":true,\"allowDirectSubmit\":false,\"archivedVersions\":[],\"articleType\":\"Research Article\",\"associatedPublications\":[],\"authors\":[{\"id\":356301327,\"identity\":\"6b618f0e-4e6f-452c-b7fe-9802482d87a3\",\"order_by\":0,\"name\":\"M. Rashad\",\"email\":\"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAxUlEQVRIiWNgGAWjYHACNiBmlgMzeUjRYgymSNKS2EC0Ft0G5mePbtRYp2+438D44G0bgz1/AwEtZgfYzI1zjqXnbjjGwGw4t40hccYBgloYzKRz2A6DtLBJ87YxJDAQ1sL+TTrn3+F0g2MM7L+BWuzlCWvhMZPObTucANTCxgzUwriBoJbDPGXSuX3phjOPJTZLzjknkbiRoJbj7dukc75Zy/MdPnzww5syG3s5QloYmOEsxgYgIUFI/SgYBaNgFIwCYgAAB1c7fwLeJfYAAAAASUVORK5CYII=\",\"orcid\":\"\",\"institution\":\"University of Tabuk\",\"correspondingAuthor\":true,\"prefix\":\"\",\"firstName\":\"M.\",\"middleName\":\"\",\"lastName\":\"Rashad\",\"suffix\":\"\"},{\"id\":356301328,\"identity\":\"878b9c3b-3f38-4867-99f8-eb66b4bb6c8f\",\"order_by\":1,\"name\":\"Ahmed F. M. EL-Mahdy\",\"email\":\"\",\"orcid\":\"\",\"institution\":\"National Sun Yat-Sen University\",\"correspondingAuthor\":false,\"prefix\":\"\",\"firstName\":\"Ahmed\",\"middleName\":\"F. 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20:12:42\",\"currentVersionCode\":1,\"declarations\":\"\",\"doi\":\"10.21203/rs.3.rs-5005888/v1\",\"doiUrl\":\"https://doi.org/10.21203/rs.3.rs-5005888/v1\",\"draftVersion\":[],\"editorialEvents\":[{\"content\":\"https://doi.org/10.1007/s10904-024-03444-2\",\"type\":\"published\",\"date\":\"2024-10-23T15:57:47+00:00\"}],\"editorialNote\":\"\",\"failedWorkflow\":false,\"files\":[{\"id\":65693457,\"identity\":\"c98eb3a3-91e7-4ce4-bf5f-8dadf7b5d53f\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:42:59\",\"extension\":\"png\",\"order_by\":1,\"title\":\"Figure 1\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":179906,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003eXRD of (a) as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K for different times of (b) 30, (c) 60, (d) 90 and (e) 210 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10:34:59\",\"extension\":\"png\",\"order_by\":3,\"title\":\"Figure 3\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":70754,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003eSEM analysis of images for (a) as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K at different times of (b) 90 and (c )210 min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"3.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/f78b3ddb471c04eff58f2078.png\"},{\"id\":65692424,\"identity\":\"b1694d29-dc32-4b2b-99ce-6ab6f7978dc5\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:35:08\",\"extension\":\"png\",\"order_by\":4,\"title\":\"Figure 4\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":225801,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003eTransmittance and reflectance of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K at different times of 30, 60, 90 and 210 min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"4.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/5f23bafa89a35cf7e7f4e9fc.png\"},{\"id\":65692411,\"identity\":\"4742d6f8-6f79-4145-a05c-12c56f0dfee7\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:34:59\",\"extension\":\"png\",\"order_by\":5,\"title\":\"Figure 5\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":170049,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003eAbsorption coefficient (α) of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K at different times of 30, 60, 90 and 210 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min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"6.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/6ec440b6c67200a64938e255.png\"},{\"id\":65692421,\"identity\":\"ea566abe-6f94-4375-99e1-ef23d74b2320\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:34:59\",\"extension\":\"png\",\"order_by\":7,\"title\":\"Figure 7\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":159980,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003e(αhν)\\u003csup\\u003e2\\u003c/sup\\u003e versus photon energy of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K at different times of 30, 60, 90 and 210 min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"7.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/0f19e83decfbdcbf88bc9f34.png\"},{\"id\":65692412,\"identity\":\"aa058c38-fa83-4fb5-a28a-a9fe7914e1df\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:34:59\",\"extension\":\"png\",\"order_by\":8,\"title\":\"Figure 8\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":163474,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003eExtinction coefficient (k) versus photon energy of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K at different times of 30, 60, 90 and 210 min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"8.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/921edd0b18493cdfbc1b2902.png\"},{\"id\":65693461,\"identity\":\"2c465bff-d117-40b6-9fdd-e3109bfd29e8\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:42:59\",\"extension\":\"png\",\"order_by\":9,\"title\":\"Figure 9\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":125907,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003eRefractive index (n) versus wavelength (λ) of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K at different times of 30, 60, 90 and 210 min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"9.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/c7a55a156376bea50ba27823.png\"},{\"id\":65692417,\"identity\":\"a981d3aa-1a61-407c-8047-e9836cc67d56\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:34:59\",\"extension\":\"png\",\"order_by\":10,\"title\":\"Figure 10\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":145360,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003eε\\u003csub\\u003er\\u003c/sub\\u003e versus λ of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K at different times of 30, 60, 90 and 210 min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"10.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/5a825c3e6c706c0965a988f4.png\"},{\"id\":65693459,\"identity\":\"88e77627-fae2-4d77-a8e0-beaac0d6bfb9\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:42:59\",\"extension\":\"png\",\"order_by\":11,\"title\":\"Figure 11\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":144076,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003eε\\u003csub\\u003ei\\u003c/sub\\u003e versus λ of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K at different times of 30, 60, 90 and 210 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min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"12.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/34d4d6f6c24bea5c393d5dcf.png\"},{\"id\":65692418,\"identity\":\"0abd6c79-97b2-4de5-b1a5-49562020b110\",\"added_by\":\"auto\",\"created_at\":\"2024-10-01 10:34:59\",\"extension\":\"png\",\"order_by\":13,\"title\":\"Figure 13\",\"display\":\"\",\"copyAsset\":false,\"role\":\"figure\",\"size\":207739,\"visible\":true,\"origin\":\"\",\"legend\":\"\\u003cp\\u003en\\u003csup\\u003e2\\u003c/sup\\u003e versus λ\\u003csup\\u003e2\\u003c/sup\\u003e of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75 \\u003c/sub\\u003efilms at 573 K at different times of 30, 60, 90 and 210 min.\\u003c/p\\u003e\",\"description\":\"\",\"filename\":\"13.png\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/e349f9c293e8ec69e12f862c.png\"},{\"id\":67682736,\"identity\":\"e086f079-63a3-4026-8a08-b3e77dab0cee\",\"added_by\":\"auto\",\"created_at\":\"2024-10-28 16:14:59\",\"extension\":\"pdf\",\"order_by\":0,\"title\":\"\",\"display\":\"\",\"copyAsset\":false,\"role\":\"manuscript-pdf\",\"size\":3708762,\"visible\":true,\"origin\":\"\",\"legend\":\"\",\"description\":\"\",\"filename\":\"manuscript.pdf\",\"url\":\"https://assets-eu.researchsquare.com/files/rs-5005888/v1/c6eea105-2efe-409a-9c6a-91abb51a348a.pdf\"}],\"financialInterests\":\"No competing interests reported.\",\"formattedTitle\":\"Gradually Thermal Diffusing of Silver on Amorphous GeSe Thin Film; Structural and Optical Properties\",\"fulltext\":[{\"header\":\"1. Introduction\",\"content\":\"\\u003cp\\u003eChalcogenide GaAs is a type of amorphous semiconductor that contains germanium, arsenic, and one or more of the chalcogen elements (sulfur, selenium, or tellurium). Chalcogenide GaAs has unique optical, electrical, and thermal properties that make it suitable for various applications, such as phase-change memory, nanomedicine, and optoelectronics [\\u003cspan citationid=\\\"CR1\\\" class=\\\"CitationRef\\\"\\u003e1\\u003c/span\\u003e]. GaAs films can be deposited on crystalline GaAs substrates to form heterojunctions, which are junctions between two different types of semiconductors. These heterojunctions can exhibit negative differential resistance, low forward resistance, and strong current saturation, depending on the bias voltage and the state of the chalcogenide glass [\\u003cspan citationid=\\\"CR2\\\" class=\\\"CitationRef\\\"\\u003e2\\u003c/span\\u003e]. These films can provide a low-loss, thermally stable, and mechanically robust bonding layer for GaAs OPO elements [\\u003cspan citationid=\\\"CR3\\\" class=\\\"CitationRef\\\"\\u003e3\\u003c/span\\u003e]. Silver (Ag) is a metal that can diffuse into gallium arsenide (GaAs), a compound semiconductor, and form ohmic contacts or Schottky barriers, depending on the doping type and concentration of GaAs. Ag diffusion into GaAs can be achieved by various methods, such as thermal annealing, ion implantation, or laser irradiation [\\u003cspan citationid=\\\"CR4\\\" class=\\\"CitationRef\\\"\\u003e4\\u003c/span\\u003e]. The diffusion mechanism and depth of Ag in GaAs depend on the temperature, time, and energy of the diffusion process, as well as the initial thickness and morphology of the Ag layer [\\u003cspan citationid=\\\"CR5\\\" class=\\\"CitationRef\\\"\\u003e5\\u003c/span\\u003e]. This diffusion can alter the electrical, optical, and structural properties of GaAs, such as the carrier concentration, band gap, lattice constant, and defect density. It also affect the performance and reliability of GaAs-based devices, such as solar cells, light-emitting diodes, lasers, and transistors. Therefore, it is an important phenomenon to study and control for the fabrication and optimization of GaAs devices. The post-growth treatments, such as annealing, ion implantation, or laser irradiation, can also modify the structural properties of GaAs films, such as the defect density, the lattice parameter, the grain size, and the crystallinity. For example, annealing can enhance the diffusion and the recrystallization of GaAs films, reducing the defects and improving the electrical properties. Ion implantation can introduce dopants or defects into GaAs films, changing their conductivity and optical properties. The growth parameters of GaAs, such as the temperature, pressure, flux ratio, and doping, can affect the crystalline quality, the morphology, the composition, and the strain of the films[\\u003cspan citationid=\\\"CR6\\\" class=\\\"CitationRef\\\"\\u003e6\\u003c/span\\u003e][\\u003cspan citationid=\\\"CR7\\\" class=\\\"CitationRef\\\"\\u003e7\\u003c/span\\u003e].\\u003c/p\\u003e \\u003cp\\u003eIn this study, melt quench is a tool which used to prepare GeSe binary glasses. The thermal evaporation method has been used to prepare two layers of thin films on a glass substrate. A first layer of GeSe with a thickness of 340\\u0026thinsp;\\u0026plusmn;\\u0026thinsp;5 nm is prepared, and on top of it, a very thin layer of evaporated silver is applied. Different temperatures of 30, 60, 90, 180, and 210 minutes at 573 K were used to anneal the GeSe with Ag on top of the film. Various structural investigations have been done using SEM and XRD. The effect of varying the annealing time on the optical properties of Ag on top of GaAs films has been done. We believe that the findings from our research could be beneficial for several implications for various fields, including material science, optoelectronics, and the development of new functional materials and devices.\\u003c/p\\u003e\"},{\"header\":\"2. Experimental techniques\",\"content\":\"\\u003cp\\u003eThe bulk material for GeAs glasses was created using the well-known melt quenching technique using 4N pure Ge and As. A highly sensitive digital balance with an accuracy of 0.01 mg was used to measure the required amounts of the components. After the materials were measured, they were placed in a clean, cleared, fixed silica tube and heated to a constant temperature of 1273 K using a temperature controller for a full day. To ensure composite homogeneity, the tube was shaken at regular intervals during the heating process. After that, an ice bath was used to quench the tube.\\u003c/p\\u003e \\u003cp\\u003eGeAs films were produced by a thermal evaporation process with a coating unit (HHV Auto 306). The films were applied to previously clean optically glass substrates. To get uniformly fabricated films at a distance of 25 cm above the evaporator, the substrate was placed onto a rotatable holder. The substrates were maintained at room temperature while the GeAs films were being created in a vacuum stronger than 10\\u003csup\\u003e\\u0026minus;\\u0026thinsp;4\\u003c/sup\\u003e Pa. The film thickness of 340\\u0026thinsp;\\u0026plusmn;\\u0026thinsp;5 nm was achieved by controlling the deposition rate at 4.2 nm/s using the quartz crystal thickness monitor, and verifying the film thickness using the interferometric technique. The Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films were annealed at 573 K at different times of 30, 60, 90, 180 and 210 min. in the vacuum. X-ray diffraction (XRD) was used to examine the structural characteristics of the as-prepared films using a Philips diffractometer 1710 with a Ni-sifted CuKα source (λ\\u0026thinsp;=\\u0026thinsp;0.15418 nm). The structure details of the films are investigated using the scanning electron microscope (SEM). Using a double-beam spectrophotometer (JASCO, V-570 UV VIS NIR), the transmittance, T, and reflectance, R, of the films were measured in the wavelength (λ) range of 200\\u0026ndash;2500 nm.\\u003c/p\\u003e\"},{\"header\":\"3. Results and discussion\",\"content\":\"\\u003cdiv id=\\\"Sec4\\\"\\u003e\\n \\u003ch2\\u003e3.1 Structural investigations\\u003c/h2\\u003e\\n \\u003cp\\u003eAs well known that, amorphous materials are difficult to characterize as a broad hump using XRD, which don\\u0026rsquo;t produce sharp diffraction peaks. Therefore, Fig. \\u003cspan\\u003e1\\u003c/span\\u003e shows XRD of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K at different annealing times of 30, 60, 90 and 210 min. For as prepared Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films, it shows an amorphous nature without distinguish peaks. On the other hand after annealed at 573 K for 30 min., still amorphous nature with distinguish peak of GeSe\\u003csub\\u003e2\\u003c/sub\\u003e at 72.19\\u003csup\\u003eo\\u003c/sup\\u003e. At increasing annealing times of 60, 90 and 210 min, six distinguish peak of GeSe\\u003csub\\u003e2\\u003c/sub\\u003e were appeared at 14.4\\u003csup\\u003eo\\u003c/sup\\u003e, 29.25\\u003csup\\u003eo\\u003c/sup\\u003e, 41.56\\u003csup\\u003eo\\u003c/sup\\u003e, 44.72\\u003csup\\u003eo\\u003c/sup\\u003e, 61.14\\u003csup\\u003eo\\u003c/sup\\u003e and 72.19\\u003csup\\u003eo\\u003c/sup\\u003e. All distinguish peak were comprised with JCPDS file No. as illustrate in Table \\u003cspan\\u003e1\\u003c/span\\u003e. At annealed of 573 K at 210 min. there are two peaks of silver were appeared at 79 and 82\\u003csup\\u003eo\\u003c/sup\\u003e which are shifted to a higher values compared to the original card Ref. No. (0.1-0.87-0.719) due to many reasons such as lattice parameters, Microstructure parameter or thermal annealing which considered as the main reason of the present case. Furthermore, the average crystalline size of the thin films, D, is usually obtained[\\u003cspan\\u003e8\\u003c/span\\u003e] \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:D=\\\\frac{0.94\\\\lambda\\\\:}{\\\\beta\\\\:cos\\\\theta\\\\:}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e where \\u003cem\\u003e\\u0026lambda;\\u003c/em\\u003e is X-ray wavelength, \\u003cem\\u003e\\u0026beta;\\u003c/em\\u003e is the full width at half maximum (FWHM) in radiant and \\u003cem\\u003e\\u0026theta;\\u003c/em\\u003e is the Bragg\\u0026rsquo;s angle. Indeed the strain value, \\u003cem\\u003e\\u0026epsilon;\\u003c/em\\u003e, is determined by the following relation[\\u003cspan\\u003e9\\u003c/span\\u003e][\\u003cspan\\u003e10\\u003c/span\\u003e] \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:\\\\epsilon\\\\:=\\\\frac{\\\\beta\\\\:}{4tan\\\\theta\\\\:}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e whereas the dislocation density,\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:\\\\delta\\\\:\\\\)\\u003c/span\\u003e\\u003c/span\\u003e, was calculated according to the following equation[\\u003cspan\\u003e11\\u003c/span\\u003e] \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:\\\\delta\\\\:=\\\\frac{1}{{D}^{2}}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e. The calculated value of crystallite size, D, the dislocation density, \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:\\\\delta\\\\:\\\\)\\u003c/span\\u003e\\u003c/span\\u003e, and the lattice strain, \\u0026epsilon;, were listed in Table \\u003cspan\\u003e1\\u003c/span\\u003e. This table shows that the values of D increase with the increasing of annealing time. This result can be explained due to the decline of lattice defects along the grain boundaries as Ag diffusion increased inside the GaAs films[\\u003cspan\\u003e12\\u003c/span\\u003e], whilst the values of \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:\\\\delta\\\\:\\\\)\\u003c/span\\u003e\\u003c/span\\u003e and \\u0026epsilon; decrease with the increasing of annealing temperature.\\u003c/p\\u003e\\n \\u003cdiv\\u003e\\n \\u003ctable id=\\\"Tab1\\\" border=\\\"1\\\"\\u003e\\n \\u003ccaption language=\\\"En\\\"\\u003e\\n \\u003cdiv\\u003eTable 1\\u003c/div\\u003e\\n \\u003cdiv\\u003e\\n \\u003cp\\u003eStructural parameters Crystalline calculated of as prepared and annealed (Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e)Ag films at 573 K at different times of 30, 60, 90 and 210 min.\\u003c/p\\u003e\\n \\u003c/div\\u003e\\n \\u003c/caption\\u003e\\n \\u003cthead\\u003e\\n \\u003ctr\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eAnnealing time (min.)\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eKind of Phase\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eh k l\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003ed.\\u003csub\\u003eexp\\u003c/sub\\u003e.\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003ed. \\u003csub\\u003estand\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eAverage of crystallite size for GeSe phase (D) (nm)\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eStrain values (ɛ) \\u0026times; 10\\u003csup\\u003e\\u0026minus;\\u0026thinsp;3\\u003c/sup\\u003e\\u003c/p\\u003e\\n \\u003cp\\u003e(lin\\u003csup\\u003e\\u0026minus;\\u0026thinsp;2\\u003c/sup\\u003e.m\\u003csup\\u003e\\u0026minus;\\u0026thinsp;4\\u003c/sup\\u003e)\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003edislocation\\u003c/p\\u003e\\n \\u003cp\\u003edensity \\u0026delta;\\u0026thinsp;\\u0026times;\\u0026thinsp;10\\u003csup\\u003e14\\u003c/sup\\u003e (lines/m\\u003csup\\u003e2\\u003c/sup\\u003e)\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eJCPDS file No.\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003c/tr\\u003e\\n \\u003c/thead\\u003e\\n \\u003ctbody\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e0\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e315\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.308\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.30821\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e18.55\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.95\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.655\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e04-003-4149\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e30\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e315\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.308\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.30821\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e15.88\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.28\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.99\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e04-003-4149\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e60\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e026\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.31\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.30821\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e20.24\\u003c/p\\u003e\\n \\u003cp\\u003e18.37\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e1.79\\u003c/p\\u003e\\n \\u003cp\\u003e1.97\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e3.0714\\u003c/p\\u003e\\n \\u003cp\\u003e3.7285\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e04-003-4149 85\\u0026ndash;0566\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eSe\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e012\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.034\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.0318\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e90\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e110\\u003c/p\\u003e\\n \\u003cp\\u003e105\\u003c/p\\u003e\\n \\u003cp\\u003e315\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e6.088\\u003c/p\\u003e\\n \\u003cp\\u003e3.038\\u003c/p\\u003e\\n \\u003cp\\u003e1.309\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e6.07\\u003c/p\\u003e\\n \\u003cp\\u003e3.0400\\u003c/p\\u003e\\n \\u003cp\\u003e1.30821\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e21.595\\u003c/p\\u003e\\n \\u003cp\\u003e20.8\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e1.72\\u003c/p\\u003e\\n \\u003cp\\u003e1.74\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e2.93\\u003c/p\\u003e\\n \\u003cp\\u003e2.9082\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"2\\\"\\u003e\\n \\u003cp\\u003e16\\u0026ndash;0080\\u003c/p\\u003e\\n \\u003cp\\u003e33\\u0026ndash;0581\\u003c/p\\u003e\\n \\u003cp\\u003e04-003-4149 85\\u0026ndash;0566\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eSe\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e012\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.034\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.0318\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"4\\\"\\u003e\\n \\u003cp\\u003e210\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003cp\\u003eGeSe\\u003csub\\u003e2\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e020\\u003c/p\\u003e\\n \\u003cp\\u003e105\\u003c/p\\u003e\\n \\u003cp\\u003e315\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e6.174\\u003c/p\\u003e\\n \\u003cp\\u003e3.052\\u003c/p\\u003e\\n \\u003cp\\u003e1.309\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e6.15\\u003c/p\\u003e\\n \\u003cp\\u003e3.0400\\u003c/p\\u003e\\n \\u003cp\\u003e1.30821\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"4\\\"\\u003e\\n \\u003cp\\u003e23.78\\u003c/p\\u003e\\n \\u003cp\\u003e32.8\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"4\\\"\\u003e\\n \\u003cp\\u003e1.76\\u003c/p\\u003e\\n \\u003cp\\u003e1.135\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"4\\\"\\u003e\\n \\u003cp\\u003e3.26\\u003c/p\\u003e\\n \\u003cp\\u003e1.27\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\" rowspan=\\\"4\\\"\\u003e\\n \\u003cp\\u003e16\\u0026ndash;0080\\u003c/p\\u003e\\n \\u003cp\\u003e33\\u0026ndash;0581\\u003c/p\\u003e\\n \\u003cp\\u003e04-003-4149\\u003c/p\\u003e\\n \\u003cp\\u003e73-2087\\u003c/p\\u003e\\n \\u003cp\\u003e85\\u0026ndash;0566\\u003c/p\\u003e\\n \\u003cp\\u003e83-2438\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eSe\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e520\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.165\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.1653\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eSe\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e314\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.026\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.025\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eSe\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e103\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.516\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.5153\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003c/tbody\\u003e\\n \\u003c/table\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eSEM images of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K at different annealing times of 30, 90 and 210 min are shown \\u003cstrong\\u003eFig.\\u0026nbsp;2\\u003c/strong\\u003e. The surface monographic of the as prepared films is recognized by its uniformly spherical shape. As the annealing temperature increases, the size of these small white spots increase with increasing annealed times. These spots related to gradually thermal diffusing of silver on amorphous GeSe thin film which confirm the XRD results. The average size of these spherical particles is found to be about 500 nm, whilst the diameter of the spherical particles for annealed films at 573 K at different annealing times of 30, 60, 90 and 210 min are ranging from 500 nm to 2000 nm. This phenomenon could be expounded due to the effect of the annealing time in removing the defects, and therefore the accumulation of particles is proposed to be occurred[\\u003cspan\\u003e13\\u003c/span\\u003e]. Moreover, Image J program was using for analyzing the images which shown in \\u003cstrong\\u003eFig.\\u0026nbsp;3\\u003c/strong\\u003e. These analyses confirm the increasing of particles agglomeration with annealing time from 350, 550 and 700 nm due to gradually thermal diffusing of Silver.\\u003c/p\\u003e\\n\\u003c/div\\u003e\\n\\u003cdiv id=\\\"Sec5\\\"\\u003e\\n \\u003ch2\\u003e3.2 Linear optical investigations\\u003c/h2\\u003e\\n \\u003cdiv id=\\\"Sec6\\\"\\u003e\\n \\u003ch2\\u003e3.2.1 Absorption parameters\\u003c/h2\\u003e\\n \\u003cp\\u003eLinear optical analysis aimed to assess various optical parameters and constants and forecast their possible uses. The transmittance of a medium or a material is the fraction of light that passes through the other side of the medium or the proportion of the light energy hitting it to the light going through it. The estimated values of transmittance (\\u003cem\\u003eT\\u003c/em\\u003e) and reflectance (\\u003cem\\u003eR\\u003c/em\\u003e) provide a simpler method for calculating important optical parameters such as optical bandgap, localized state refractive index width, and other parameters. As the light travels through any medium, it can be transmitted, reflected, or absorbed. \\u003cem\\u003eT\\u003c/em\\u003e and \\u003cem\\u003eR\\u003c/em\\u003e characteristics of Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films were examined in relation to incident wavelength (\\u0026lambda;). Figure \\u003cspan\\u003e4\\u003c/span\\u003e displays both \\u003cem\\u003eT\\u003c/em\\u003e and \\u003cem\\u003eR\\u003c/em\\u003e at different \\u0026lambda; values from ultraviolet to near-infrared (200\\u0026ndash;2500 nm) for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K at different annealing times of 30, 60, 90, 180 and 210 min. it can be seen form that figure, in the ultraviolet region (200\\u0026ndash;500 nm), \\u003cem\\u003eT\\u003c/em\\u003e values rose considerably with \\u0026lambda;. However, as the \\u0026lambda; increased more, the rate of rise in \\u003cem\\u003eT\\u003c/em\\u003e became smaller, eventually stabilizing for the remaining \\u0026lambda; range. The Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K at different annealing times of 30, 60, 90, 180 and 210 min showed high transmittance values for wavelengths (500\\u0026thinsp;\\u0026le;\\u0026thinsp;\\u0026lambda;\\u0026thinsp;\\u0026le;\\u0026thinsp;800 nm). As the annealing time went up from 30 to 210 min, the measured transmittance value also went up. In contrast, the \\u003cem\\u003eR\\u003c/em\\u003e values of the prepared samples displayed a different pattern than \\u003cem\\u003eT\\u003c/em\\u003e. The \\u003cem\\u003eR\\u003c/em\\u003e values were lower throughout the examined \\u0026lambda; range, with an average value around 4%. The annealing time shows a nonlinear variation when \\u003cem\\u003eT\\u003c/em\\u003e or \\u003cem\\u003eR\\u003c/em\\u003e is changed.\\u003c/p\\u003e\\n \\u003cp\\u003eAg/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films can be used in applications that require transparent materials, such as packaging material for optoelectronic and microelectronic devices. Therefore, the estimated value of absorption coefficient (\\u0026alpha;) was calculated using[\\u003cspan\\u003e14\\u003c/span\\u003e]:\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ1\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ1\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:\\\\alpha\\\\:=\\\\frac{1}{d}ln\\\\left[\\\\frac{(1-{R}^{2})}{2T}+\\\\sqrt{{R}^{2}+\\\\frac{(1-{R}^{2})}{4{T}^{2}}}\\\\right]$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e1\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003e\\u003cem\\u003ed\\u003c/em\\u003e: thickness, \\u003cem\\u003eT\\u003c/em\\u003e: transmittance and \\u003cem\\u003eR\\u003c/em\\u003e: reflectance.\\u003c/p\\u003e\\n \\u003cp\\u003eThe absorption coefficient (\\u0026alpha;) is a measure of how well a substance can absorb light with a specific wavelength per unit length. It provides information about each absorber molecule or ion and the nature of the electronic transition. The absorption coefficient determines whether the electronic transition will occur directly or indirectly. Changes in the absorption coefficient can be attributed to annealing times of 30, 60, 90, 180 and 210 min. As shown in Fig. \\u003cspan\\u003e5\\u003c/span\\u003e, the value of \\u0026alpha; increases as the photon energy increases, while in the range of (0.5-2.0 eV), a shoulder is observed. As the annealing time increases, the value of \\u0026alpha; decreases. Therefore, more Ag diffuse in layer of GaAs films, which enhance the absorption of the present films. Figures \\u003cspan\\u003e6\\u003c/span\\u003e and \\u003cspan\\u003e7\\u003c/span\\u003e show the plot of (\\u0026alpha;h\\u0026nu;)\\u003csup\\u003e1/2\\u003c/sup\\u003e and (\\u0026alpha;h\\u0026nu;)\\u003csup\\u003e2\\u003c/sup\\u003e against the photon energy (h\\u0026nu;) for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K and different annealing times of 30, 60, 90, 180 and 210 min.\\u003c/p\\u003e\\n \\u003cp\\u003eThe first two plots are driven using[\\u003cspan\\u003e15\\u003c/span\\u003e] :\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ2\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ2\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{\\\\left(\\\\alpha\\\\:h\\\\upsilon\\\\:\\\\right)}^{r}=const.(h\\\\upsilon\\\\:-{E}_{g})$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e2\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eThe plots of (\\u0026alpha;h\\u0026nu;)\\u003csup\\u003e1/2\\u003c/sup\\u003e and (\\u0026alpha;h\\u0026nu;)\\u003csup\\u003e2\\u003c/sup\\u003e show linear relationships with photon energy at higher energy levels, indicating that Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K and different annealing times of 30, 60, 90, 180 and 210 min exhibit indirect optical transitions. The more fitting relation indicate that indirect transition is the majority one in these samples due to Ag in Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e which create localized states in Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e samples. The intercepts of the lines yield estimated values for the direct and indirect optical bandgap (\\u003cem\\u003eE\\u003c/em\\u003e\\u003csub\\u003e\\u003cem\\u003eg\\u003c/em\\u003e\\u003c/sub\\u003e) for the respective samples as listed in Table \\u003cspan\\u003e1\\u003c/span\\u003e. It is well known that the \\u003cem\\u003eE\\u003c/em\\u003e\\u003csub\\u003e\\u003cem\\u003eg\\u003c/em\\u003e\\u003c/sub\\u003e of a material can be affected by various factors, such as temperature, pressure, doping, and grain size, therefore it is changed due to gradually thermal diffusing of silver.\\u003c/p\\u003e\\n \\u003cp\\u003eThe amount of light that a material absorbs at a specific wavelength is measured by its extinction coefficient. The mass extinction coefficient, molar extinction coefficient, optical extinction coefficient, and other units can be used to express it. The size, shape, composition, and structure of the material are among the physical and chemical characteristics that affect the extinction coefficient. The extension coefficient (k\\u003csub\\u003eex\\u003c/sub\\u003e), using an equation[\\u003cspan\\u003e16\\u003c/span\\u003e]\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ3\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ3\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{k}_{ex}=\\\\frac{\\\\alpha\\\\:\\\\lambda\\\\:}{4\\\\pi\\\\:}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e3\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eFigure \\u003cspan\\u003e8\\u003c/span\\u003e depict the extension coefficient (\\u003cem\\u003ek\\u003c/em\\u003e\\u003csub\\u003e\\u003cem\\u003eex\\u003c/em\\u003e\\u003c/sub\\u003e) versus photon energy (eV) for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K and different annealing times of 30, 60, 90, 180 and 210 min.\\u003c/p\\u003e\\n \\u003c/div\\u003e\\n \\u003cdiv id=\\\"Sec7\\\"\\u003e\\n \\u003ch2\\u003e3.2.2 Dispersion parameters\\u003c/h2\\u003e\\n \\u003cp\\u003eThe refractive index (\\u003cem\\u003en\\u003c/em\\u003e) versus the wavelength (\\u0026lambda;) is illustrated in Fig. \\u003cspan\\u003e7\\u003c/span\\u003e for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K and different annealing times of 30, 60, 90, 180 and 210 min, respectively was estimated from[\\u003cspan\\u003e17\\u003c/span\\u003e]\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ4\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ4\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:n=\\\\sqrt{\\\\frac{4R}{{(R-1)}^{2}}-{k}_{ex}^{2}}+\\\\frac{R+1}{R-1}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e4\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eBoth k\\u003csub\\u003eex\\u003c/sub\\u003e and n follow a similar trend to \\u0026alpha;. In the ultraviolet (UV) region, at wavelengths shorter than 275 nm (\\u0026le;\\u0026thinsp;4.5 eV), their values abruptly drop from higher values before progressively increasing with additional wavelength. For Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films, k\\u003csub\\u003eex\\u003c/sub\\u003e values vary from 0 to 1 and get smaller as the annealing time increases. At 1000 nm, the refractive index reaches its maximum value of 6, with an average range of 2 to 6 [\\u003cspan\\u003e18\\u003c/span\\u003e].\\u003c/p\\u003e\\n \\u003cp\\u003eFigures \\u003cspan\\u003e9\\u003c/span\\u003e and \\u003cspan\\u003e10\\u003c/span\\u003e illustrates the real part of the dielectric constant (\\u0026epsilon;\\u003csub\\u003er\\u003c/sub\\u003e) and the imaginary part of the dielectric constant (\\u003cem\\u003e\\u0026epsilon;\\u003c/em\\u003e\\u003csub\\u003e\\u003cem\\u003ei\\u003c/em\\u003e\\u003c/sub\\u003e), respectively, as a function of the wavelength (\\u0026lambda;) for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K and various annealing times of 30, 60, 90, 180 and 210 min.\\u003c/p\\u003e\\n \\u003cp\\u003eThe values of (\\u0026epsilon;\\u003csub\\u003er\\u003c/sub\\u003e) and (\\u0026epsilon;\\u003csub\\u003ei\\u003c/sub\\u003e) were derived from the equation [\\u003cspan\\u003e19\\u003c/span\\u003e].\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ5\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ5\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{\\\\epsilon\\\\:}_{r}={n}^{2}-{k}_{ex}^{2}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e5\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cdiv id=\\\"Equ6\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ6\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{\\\\epsilon\\\\:}_{i}=2n{k}_{ex}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e6\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eAn increase in the annealing times causes minor changes in the dielectric constants of (Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e)Ag, specifically the real part (\\u0026epsilon;\\u003csub\\u003er\\u003c/sub\\u003e) and the imaginary part (\\u0026epsilon;\\u003csub\\u003ei\\u003c/sub\\u003e). For the same wavelength, \\u0026epsilon;\\u003csub\\u003ei\\u003c/sub\\u003e is smaller than \\u0026epsilon;\\u003csub\\u003er\\u003c/sub\\u003e. When wavelengths surpass 450 nm, there is a slight increase in \\u0026epsilon;\\u003csub\\u003ei\\u003c/sub\\u003e and a decrease in \\u0026epsilon;\\u003csub\\u003er\\u003c/sub\\u003e. While \\u0026epsilon;\\u003csub\\u003ei\\u003c/sub\\u003e reaches a stable value, \\u0026epsilon;\\u003csub\\u003er\\u003c/sub\\u003e reaches its maximum value at 1200 nm[\\u003cspan\\u003e19\\u003c/span\\u003e]. A portion of the optical energy is lost when it drops below the optical bandgap. Dispersion parameters, such as the static refractive index, dispersion energy, and single oscillator energy, can be used to quantify this lost energy. The Wemple-DiDomenico model is used to compute these parameters[\\u003cspan\\u003e20\\u003c/span\\u003e].\\u003c/p\\u003e\\n \\u003cp\\u003eFigure \\u003cspan\\u003e11\\u003c/span\\u003e displays a graph of (n\\u003csup\\u003e2\\u003c/sup\\u003e-1)\\u003csup\\u003e\\u0026minus;1\\u003c/sup\\u003e versus (h\\u0026upsilon;)\\u003csup\\u003e2\\u003c/sup\\u003e for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K and various annealing times of 30, 60, 90, 180 and 210 min.\\u003c/p\\u003e\\n \\u003cp\\u003eThe experimental data was fitted to straight lines using a specific formula[\\u003cspan\\u003e21\\u003c/span\\u003e]\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ7\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ7\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{({n}^{2}-1)}^{-1}=\\\\frac{{E}_{a}}{{E}_{d}}-\\\\frac{{\\\\left(h\\\\upsilon\\\\:\\\\right)}^{2}}{{E}_{o}{E}_{d}}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e7\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cdiv id=\\\"Equ8\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ8\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{\\\\epsilon\\\\:}_{\\\\infty\\\\:}={n}_{o}^{2}=1+\\\\frac{{E}_{d}}{{E}_{a}}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e8\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eBased on the slope and intercept of the straight lines, Table \\u003cspan\\u003e2\\u003c/span\\u003e presents the estimated values of the oscillator\\u0026apos;s average energy (E\\u003csub\\u003ea\\u003c/sub\\u003e) and the inter-band optical transitions\\u0026apos; average strength (E\\u003csub\\u003ed\\u003c/sub\\u003e).\\u003c/p\\u003e\\n \\u003cdiv\\u003e\\n \\u003ctable id=\\\"Tab2\\\" border=\\\"1\\\"\\u003e\\n \\u003ccaption language=\\\"En\\\"\\u003e\\n \\u003cdiv\\u003eTable 2\\u003c/div\\u003e\\n \\u003cdiv\\u003e\\n \\u003cp\\u003eDeduced optical parameters of as prepared and annealed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films at 573 K at different times of 30, 60, 90 and 210 min.\\u003c/p\\u003e\\n \\u003c/div\\u003e\\n \\u003c/caption\\u003e\\n \\u003cthead\\u003e\\n \\u003ctr\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eAnnealing time (min.)\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eE\\u003csup\\u003ein\\u003c/sup\\u003e\\u003csub\\u003eg\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eE\\u003csup\\u003edi\\u003c/sup\\u003e\\u003csub\\u003eg\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eE\\u003csub\\u003ea\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eE\\u003csub\\u003ed\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{n}_{\\\\infty\\\\:}^{2}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{n}_{\\\\infty\\\\:}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eM\\u003csub\\u003e\\u0026minus;\\u0026thinsp;1\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003eM\\u003csub\\u003e\\u0026minus;\\u0026thinsp;3\\u003c/sub\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{n}_{o}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{\\\\epsilon\\\\:}_{L}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003cth align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:\\\\frac{N}{{m}^{*}}\\\\)\\u003c/span\\u003e\\u003c/span\\u003ex10\\u003csup\\u003e50\\u003c/sup\\u003e\\u003c/p\\u003e\\n \\u003c/th\\u003e\\n \\u003c/tr\\u003e\\n \\u003c/thead\\u003e\\n \\u003ctbody\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e0\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.02\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.23\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.16\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.31\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.72\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.17\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.72\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.76254\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.33467\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e11.12\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e10.08\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e30\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.99\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.70\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.17\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.09\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.63\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.91\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.63\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.91\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.79\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e7.76\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e6.66\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e60\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.26\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.16\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.13\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.81\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e5.26\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.29\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.26\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.34\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.59\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e12.86\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e11.97\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e90\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.30\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.13\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.14\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e5.41\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e5.74\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.40\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.74\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.64\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.77\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e14.22\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e13.93\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e180\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.16\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.21\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.07\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e5.08\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e5.74\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.40\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.74\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.13\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.14\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e17.10\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e19.76\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e210\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.06\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.10\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e1.14\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.89\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e5.31\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e2.30\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e4.31\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.34\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e3.60\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e12.99\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"char\\\"\\u003e\\n \\u003cp\\u003e12.44\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003c/tbody\\u003e\\n \\u003c/table\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eTable \\u003cspan\\u003e2\\u003c/span\\u003e revealed that \\u0026epsilon;\\u0026thinsp;\\u0026infin;\\u0026thinsp;and no were both dependent on annealing times of 30, 60, 90, 180 and 210 min. In addition, WDD [\\u003cspan\\u003e22\\u003c/span\\u003e]states that two additional optical dispersion parameters that describe the strength of the inter-band transition are the optical spectrum moments, M\\u003csub\\u003e\\u0026minus;\\u0026thinsp;1\\u003c/sub\\u003e and M\\u003csub\\u003e\\u0026minus;\\u0026thinsp;3\\u003c/sub\\u003e. The following equations relate these parameters to the optical dispersion parameters E\\u003csub\\u003eo\\u003c/sub\\u003e and E\\u003csub\\u003ed\\u003c/sub\\u003e[\\u003cspan\\u003e23\\u003c/span\\u003e]:\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ9\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ9\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{M}_{-1}=\\\\frac{{E}_{d}}{{E}_{o}},\\\\:{M}_{-3}=\\\\frac{{M}_{-1}}{{E}_{o}^{2}}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e9\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eThe computed values for M-1 and M-3 are listed in Table \\u003cspan\\u003e2\\u003c/span\\u003e. As the annealing times increased, the values of M\\u003csub\\u003e\\u0026minus;\\u0026thinsp;1\\u003c/sub\\u003e and M\\u003csub\\u003e\\u0026minus;\\u0026thinsp;3\\u003c/sub\\u003e increased. When the annealing times rises, the trends of E\\u003csub\\u003ed\\u003c/sub\\u003e and E\\u003csub\\u003ea\\u003c/sub\\u003e shift in the same directions[\\u003cspan\\u003e24\\u003c/span\\u003e]. The formula based on the E\\u003csub\\u003eo\\u003c/sub\\u003e and E\\u003csub\\u003ed\\u003c/sub\\u003e parameters can be used to determine the static refractive index[\\u003cspan\\u003e24\\u003c/span\\u003e]:\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ10\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ10\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{n}_{o}=\\\\sqrt{1+\\\\frac{{E}_{d}}{{E}_{a}}}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e10\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eThe Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films ratio\\u0026apos;s value of n\\u003csub\\u003eo\\u003c/sub\\u003e. In addition, the high-frequency dielectric constant and the ratio of charge carrier concentration (\\u003cem\\u003eN\\u003c/em\\u003e) to the effective mass of the electron (\\u003cem\\u003em*\\u003c/em\\u003e) were determined using Sellmeier\\u0026apos;s model. The plot for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films in Fig. \\u003cspan\\u003e12\\u003c/span\\u003e shows the relationship between n\\u003csup\\u003e2\\u003c/sup\\u003e and \\u0026lambda;\\u003csup\\u003e2\\u003c/sup\\u003e. Interestingly, the experimental data shows an amazing agreement with straight lines according to the previously mentioned equation[\\u003cspan\\u003e25\\u003c/span\\u003e].\\u003c/p\\u003e\\n \\u003cp\\u003eThe relationship between a transparent material\\u0026apos;s refractive index and light wavelength is represented by Sellmeier\\u0026apos;s model. Light bending as it enters or leaves a material is measured by the refractive index. An equation involving some experimentally determined coefficients is used in Sellmeier\\u0026apos;s model. If the material doesn\\u0026apos;t absorb light in that range, the formula can be used to determine the refractive index for any wavelength.\\u003c/p\\u003e\\n \\u003cp\\u003eWe can also learn more about how light disperses, or splits into different colors, when it passes through materials using Sellmeier\\u0026apos;s model. As the annealing time increases, the value of no for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films decreases. In addition, the high-frequency dielectric constant and the ratio of charge carrier concentration (\\u003cem\\u003eN\\u003c/em\\u003e) to the effective mass of the electron (\\u003cem\\u003em*\\u003c/em\\u003e) were determined using Sellmeier\\u0026apos;s model. The plot for Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films in Fig. \\u003cspan\\u003e13\\u003c/span\\u003e shows the relationship between n\\u003csup\\u003e2\\u003c/sup\\u003e and \\u0026lambda;\\u003csup\\u003e2\\u003c/sup\\u003e. The experimental data shows an agreement with straight lines according to the previously mentioned equation[\\u003cspan\\u003e14\\u003c/span\\u003e].\\u003c/p\\u003e\\n \\u003cdiv id=\\\"Equ11\\\"\\u003e\\n \\u003cdiv id=\\\"FileID_Equ11\\\" name=\\\"EquationSource\\\"\\u003e$$\\\\:{n}^{2}={\\\\epsilon\\\\:}_{\\\\infty\\\\:}-\\\\frac{{e}^{2}}{4{\\\\pi\\\\:}^{2}{\\\\epsilon\\\\:}_{o}{c}^{2}}\\\\frac{N}{{m}^{*}}{\\\\lambda\\\\:}^{2}$$\\u003c/div\\u003e\\n \\u003cdiv\\u003e11\\u003c/div\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eThe symbols for the high-frequency dielectric constant, vacuum permittivity, and speed of light in this equation are\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{\\\\:\\\\epsilon\\\\:}_{\\\\infty\\\\:}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e, \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{\\\\epsilon\\\\:}_{o}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e, and c, respectively. In the composite, the free carrier concentration drops to 1.37 x10\\u003csup\\u003e50\\u003c/sup\\u003e when the annealing time is raised. The estimated values of \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{\\\\epsilon\\\\:}_{\\\\infty\\\\:}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e and\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:\\\\:\\\\frac{N}{{m}^{*}}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e, are listed in Table \\u003cspan\\u003e2\\u003c/span\\u003e, and the formula of \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{\\\\epsilon\\\\:}_{\\\\infty\\\\:\\\\:}={n}_{o}^{2}\\\\:\\\\)\\u003c/span\\u003e\\u003c/span\\u003e is confirmed by the estimated values of n\\u003csub\\u003eo\\u003c/sub\\u003e and \\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{\\\\epsilon\\\\:}_{\\\\infty\\\\:\\\\:}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e.\\u003c/p\\u003e\\n \\u003c/div\\u003e\\n\\u003c/div\\u003e\\n\\u003cdiv id=\\\"Sec8\\\"\\u003e\\n \\u003ch2\\u003e3.3 Nonlinear optical investigations\\u003c/h2\\u003e\\n \\u003cp\\u003eThe area of optics known as nonlinear optical studies the behavior of light in materials that respond to light\\u0026apos;s electric field in a nonlinear way. This indicates that the intensity and form of the light wave affect the material\\u0026apos;s polarization, which is a measurement of the alignment of the electric charges. Optical switching, self-focusing, frequency conversion, and optical solutions are examples of phenomena that can be produced by nonlinear optical effects. A broad range of optical applications can be made more expansible by having an understanding of the third order type of nonlinear optical susceptibility, \\u0026chi;(3) [\\u003cspan\\u003e26\\u003c/span\\u003e]. When a material is exposed to a strong electric field, like a laser beam, its polarization changes. This phenomenon is known as third-order nonlinear optical susceptibility. The measurement of a material\\u0026apos;s electric charge alignment is called polarization. Self-focusing, optical switching, and frequency conversion are examples of effects that can result from third-order nonlinear optical susceptibility. The material\\u0026apos;s composition and structure determine the value of third-order nonlinear optical susceptibility. The kind and concentration of atoms or molecules, the existence of flaws or contaminants, the temperature, and the light\\u0026apos;s wavelength are a few variables that may have an impact. Depending on how the material\\u0026apos;s constituents interact with the polarization and electric field, adding or removing certain elements can change the third-order nonlinear optical susceptibility. Using Miller\\u0026apos;s principle, \\u0026chi;(3) can be computed using [\\u003cspan\\u003e27\\u003c/span\\u003e].\\u003c/p\\u003e\\n \\u003cdiv\\u003e\\n \\u003ctable id=\\\"Taba\\\" border=\\\"1\\\"\\u003e\\n \\u003ctbody\\u003e\\n \\u003ctr\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{\\\\chi\\\\:}^{\\\\left(3\\\\right)}=\\\\frac{A{\\\\left({n}_{o}^{2}-1\\\\right)}^{4}}{{\\\\left(4\\\\pi\\\\:\\\\right)}^{4}}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e, \\u003cem\\u003eA\\u003c/em\\u003e\\u0026thinsp;=\\u0026thinsp;1.7\\u0026times;10\\u003csup\\u003e\\u0026minus;10\\u003c/sup\\u003e esu.\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003ctd align=\\\"left\\\"\\u003e\\n \\u003cp\\u003e(12)\\u003c/p\\u003e\\n \\u003c/td\\u003e\\n \\u003c/tr\\u003e\\n \\u003c/tbody\\u003e\\n \\u003c/table\\u003e\\n \\u003c/div\\u003e\\n \\u003cp\\u003eThis equation is used to calculate the nonlinear refractive index, or n\\u003csub\\u003e2\\u003c/sub\\u003e, by combining the Miller principle with a single effective oscillator.[\\u003cspan\\u003e27\\u003c/span\\u003e]\\u003c/p\\u003e\\n \\u003cp\\u003e\\u003cstrong\\u003eTable 3\\u003c/strong\\u003e lists the values of \\u0026chi;(3) and n\\u003csub\\u003e2\\u003c/sub\\u003e for (Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e)Ag films. It is evident that the computed \\u0026chi;(3) values decrease as the annealing time content increases. A few variables that may impact the annealing time third-order nonlinear optical susceptibility are the kind and quantity of metal ions present, the solvent\\u0026apos;s concentration and polarity, temperature, and light wavelength. Clearly, all these parameters were affected by diffusing of Ag on the GaAs films. Therefore, the change of the third order type of nonlinear optical susceptibility and the nonlinear refractive index due to gradually thermal diffusing of Ag on amorphous GeSe thin film.\\u0026nbsp;\\u003c/p\\u003e\\n \\u003cp\\u003e\\u003cspan\\u003e\\u003cspan\\u003e\\\\(\\\\:{n}_{2}=\\\\frac{12\\\\pi\\\\:}{{n}_{o}}{\\\\chi\\\\:}^{\\\\left(3\\\\right)}\\\\)\\u003c/span\\u003e\\u003c/span\\u003e\\u003c/p\\u003e\\n \\u003cp\\u003e(13)\\u003c/p\\u003e\\n \\u003cp\\u003e\\u003c/p\\u003e\\n\\u003c/div\\u003e\\u003cp\\u003e\\u003cimg 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\\\"\\u003e\\u003cbr\\u003e\\u003c/p\\u003e\"},{\"header\":\"Conclusion\",\"content\":\"\\u003cp\\u003eXRD and SEM confirmed the amorphous nature of Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u0026nbsp;\\u003c/sub\\u003efilms. SEM analysis showed Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u0026nbsp;\\u003c/sub\\u003efilms that increasing of particles agglomeration with annealing time from 350, 550 and 700 nm indicated to formation of Ag on the surface of Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u003c/sub\\u003e films. Optical investigations showed that annealing time change of optical band gap, oscillator\\u0026apos;s average energy and the inter-band optical transitions\\u0026apos; average strength. A few variables impact the annealing time third-order nonlinear optical susceptibility is quantity of metal ions present due to annealing time. The third order type of nonlinear optical susceptibility (2.058-3.71) and the nonlinear refractive index (3.57-6.08) due to gradually thermal diffusing of silver on amorphous GeSe thin film. Our study\\u0026apos;s findings show that Ag/Ge\\u003csub\\u003e25\\u003c/sub\\u003eSe\\u003csub\\u003e75\\u0026nbsp;\\u003c/sub\\u003efilms has a lot of potential applications, such as optoelectronics and optics.\\u003c/p\\u003e\\n\"},{\"header\":\"Declarations\",\"content\":\"\\u003cp\\u003eThe authors confirm that there are no conflict of Interest.\\u003cstrong\\u003e\\u003c/strong\\u003e\\u003cstrong\\u003e\\u0026nbsp;\\u003c/strong\\u003e\\u003c/p\\u003e\\n\\u003cp\\u003e\\u003cstrong\\u003eAcknowledgments\\u003c/strong\\u003e\\u003c/p\\u003e\\n\\u003cp\\u003eThe authors extend their appreciation to the Deputyship for Research \\u0026amp; Innovation, Ministry of Education in Saudi Arabia for funding this research work through the project number 445-9-797.\\u003c/p\\u003e\\n\"},{\"header\":\"References\",\"content\":\"\\u003col\\u003e\\n\\u003cli\\u003eP. Priyadarshini, D. Sahoo, and R. 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Rashad, \\u0026ldquo;Physica B : Physics of Condensed Matter Linear and nonlinear optical investigations of Ge 25 Se 75 thin films at different annealing temperatures,\\u0026rdquo; \\u003cem\\u003ePhys. B Phys. Condens. Matter\\u003c/em\\u003e, vol. 625, no. July 2021, p. 413351, 2022, doi: 10.1016/j.physb.2021.413351.\\u003c/li\\u003e\\n\\u003cli\\u003eM. A. Abdel-Rahim, A. Y. Abdel-Latief, M. Rashad, and N. M. Abdelazim, \\u0026ldquo;Annealing effect on structural and optical properties of Se 87.5Te10Sn2.5 thin films,\\u0026rdquo; \\u003cem\\u003eMater. Sci. Semicond. Process.\\u003c/em\\u003e, vol. 20, no. 1, pp. 27\\u0026ndash;34, 2014, doi: 10.1016/j.mssp.2013.12.035.\\u003c/li\\u003e\\n\\u003cli\\u003eA. A. Abu-Sehly, M. Rashad, M. M. Hafiz, A. A. L. Abd-Elmageed, and R. Amin, \\u0026ldquo;Tuning optical properties of thin films based on selenium tellurium,\\u0026rdquo; \\u003cem\\u003eOpt. Mater. (Amst).\\u003c/em\\u003e, vol. 109, no. 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Alloys Compd.\\u003c/em\\u003e, vol. 709, pp. 640\\u0026ndash;645, 2017, doi: 10.1016/j.jallcom.2016.08.280.\\u003c/li\\u003e\\n\\u003c/ol\\u003e\"}],\"fulltextSource\":\"\",\"fullText\":\"\",\"funders\":[],\"hasAdminPriorityOnWorkflow\":false,\"hasManuscriptDocX\":true,\"hasOptedInToPreprint\":true,\"hasPassedJournalQc\":\"\",\"hasAnyPriority\":false,\"hideJournal\":false,\"highlight\":\"\",\"institution\":\"\",\"isAcceptedByJournal\":true,\"isAuthorSuppliedPdf\":false,\"isDeskRejected\":\"\",\"isHiddenFromSearch\":false,\"isInQc\":false,\"isInWorkflow\":false,\"isPdf\":false,\"isPdfUpToDate\":true,\"isWithdrawnOrRetracted\":false,\"journal\":{\"display\":true,\"email\":\"info@researchsquare.com\",\"identity\":\"journal-of-inorganic-and-organometallic-polymers-and-materials\",\"isNatureJournal\":false,\"hasQc\":true,\"allowDirectSubmit\":false,\"externalIdentity\":\"joip\",\"sideBox\":\"Learn more about [Journal of Inorganic and Organometallic Polymers and Materials](https://www.springer.com/journal/10904)\",\"snPcode\":\"10904\",\"submissionUrl\":\"https://submission.nature.com/new-submission/10904/3\",\"title\":\"Journal of Inorganic and Organometallic Polymers and Materials\",\"twitterHandle\":\"\",\"acdcEnabled\":true,\"dfaEnabled\":true,\"editorialSystem\":\"em\",\"reportingPortfolio\":\"Springer Hybrid\",\"inReviewEnabled\":true,\"inReviewRevisionsEnabled\":false},\"keywords\":\"Ag, GeSe, Thin films, structural investigations, Thermal effect, Optical constants\",\"lastPublishedDoi\":\"10.21203/rs.3.rs-5005888/v1\",\"lastPublishedDoiUrl\":\"https://doi.org/10.21203/rs.3.rs-5005888/v1\",\"license\":{\"name\":\"CC BY 4.0\",\"url\":\"https://creativecommons.org/licenses/by/4.0/\"},\"manuscriptAbstract\":\"\\u003cp\\u003eBinary glasses of GeSe are prepared by melt quench technique. Two layers of thin film preparation have been done by the conventional thermal evaporation technique on glass substrate. GeSe with 340\\u0026thinsp;\\u0026plusmn;\\u0026thinsp;5 nm thickness is prepared as first layer, then thin silver layer are evaporated on top of the GeSe film. The GeSe with Ag on top of the film were annealed at different time of 30, 60, 90, and 180 and 210 min at 573 K of temperature. Subsequently, we have analyzed the films using scanning electron microscopy (SEM) and X-ray diffraction (XRD) to confirm the successful diffusion of Ag on GeSe films. XRD measurements show that as prepared Ag/GeSe have amorphous natures. Optical transmission and reflection spectra of the studied thin films are measured in the wavelength range of 200\\u0026thinsp;\\u0026minus;\\u0026thinsp;2500 nm at room temperature. The optical properties of the new films were studied before and after annealing at different annealing times due to gradually thermal diffusing of Silver on GaAs. The absorption coefficient (α) as an optical constant is determined as a function of annealing times. Moreover, the values of the third-order nonlinear optical susceptibility increased with an increase of annealing temperatures due to gradually thermal diffusing of Silver. The results indicate that Ag/GeSe has great potential for various applications including optical sensors and optoelectronics.\\u003c/p\\u003e\",\"manuscriptTitle\":\"Gradually Thermal Diffusing of Silver on Amorphous GeSe Thin Film; Structural and Optical Properties\",\"msid\":\"\",\"msnumber\":\"\",\"nonDraftVersions\":[{\"code\":1,\"date\":\"2024-10-01 10:34:54\",\"doi\":\"10.21203/rs.3.rs-5005888/v1\",\"editorialEvents\":[{\"type\":\"communityComments\",\"content\":0},{\"type\":\"decision\",\"content\":\"Revision requested\",\"date\":\"2024-09-19T12:24:28+00:00\",\"index\":\"\",\"fulltext\":\"\"},{\"type\":\"editorInvitedReview\",\"content\":\"\",\"date\":\"2024-09-16T06:31:37+00:00\",\"index\":\"hide\",\"fulltext\":\"\"},{\"type\":\"editorInvitedReview\",\"content\":\"\",\"date\":\"2024-09-15T13:30:26+00:00\",\"index\":\"hide\",\"fulltext\":\"\"},{\"type\":\"editorInvitedReview\",\"content\":\"\",\"date\":\"2024-09-13T11:02:45+00:00\",\"index\":\"hide\",\"fulltext\":\"\"},{\"type\":\"reviewerAgreed\",\"content\":\"152558339859717490315034441810661704182\",\"date\":\"2024-09-06T08:54:42+00:00\",\"index\":\"hide\",\"fulltext\":\"\"},{\"type\":\"reviewerAgreed\",\"content\":\"54466725544365588732071258199261518749\",\"date\":\"2024-09-06T06:21:48+00:00\",\"index\":\"hide\",\"fulltext\":\"\"},{\"type\":\"reviewerAgreed\",\"content\":\"253165371964947184689983953809284530074\",\"date\":\"2024-09-06T05:51:00+00:00\",\"index\":\"hide\",\"fulltext\":\"\"},{\"type\":\"reviewersInvited\",\"content\":\"\",\"date\":\"2024-09-06T04:49:19+00:00\",\"index\":\"\",\"fulltext\":\"\"},{\"type\":\"editorAssigned\",\"content\":\"\",\"date\":\"2024-08-31T14:51:58+00:00\",\"index\":\"\",\"fulltext\":\"\"},{\"type\":\"checksComplete\",\"content\":\"\",\"date\":\"2024-08-31T06:56:21+00:00\",\"index\":\"\",\"fulltext\":\"\"},{\"type\":\"submitted\",\"content\":\"Journal of Inorganic and Organometallic Polymers and Materials\",\"date\":\"2024-08-30T20:11:03+00:00\",\"index\":\"\",\"fulltext\":\"\"}],\"status\":\"published\",\"journal\":{\"display\":true,\"email\":\"info@researchsquare.com\",\"identity\":\"journal-of-inorganic-and-organometallic-polymers-and-materials\",\"isNatureJournal\":false,\"hasQc\":true,\"allowDirectSubmit\":false,\"externalIdentity\":\"joip\",\"sideBox\":\"Learn more about [Journal of Inorganic and Organometallic Polymers and Materials](https://www.springer.com/journal/10904)\",\"snPcode\":\"10904\",\"submissionUrl\":\"https://submission.nature.com/new-submission/10904/3\",\"title\":\"Journal of Inorganic and Organometallic Polymers and Materials\",\"twitterHandle\":\"\",\"acdcEnabled\":true,\"dfaEnabled\":true,\"editorialSystem\":\"em\",\"reportingPortfolio\":\"Springer Hybrid\",\"inReviewEnabled\":true,\"inReviewRevisionsEnabled\":false}}],\"origin\":\"\",\"ownerIdentity\":\"32f0d177-26a6-460c-9281-8a9f41a64c84\",\"owner\":[],\"postedDate\":\"October 1st, 2024\",\"published\":true,\"recentEditorialEvents\":[],\"rejectedJournal\":[],\"revision\":\"\",\"amendment\":\"\",\"status\":\"published-in-journal\",\"subjectAreas\":[],\"tags\":[],\"updatedAt\":\"2024-10-28T16:11:14+00:00\",\"versionOfRecord\":{\"articleIdentity\":\"rs-5005888\",\"link\":\"https://doi.org/10.1007/s10904-024-03444-2\",\"journal\":{\"identity\":\"journal-of-inorganic-and-organometallic-polymers-and-materials\",\"isVorOnly\":false,\"title\":\"Journal of Inorganic and Organometallic Polymers and Materials\"},\"publishedOn\":\"2024-10-23 15:57:47\",\"publishedOnDateReadable\":\"October 23rd, 2024\"},\"versionCreatedAt\":\"2024-10-01 10:34:54\",\"video\":\"\",\"vorDoi\":\"10.1007/s10904-024-03444-2\",\"vorDoiUrl\":\"https://doi.org/10.1007/s10904-024-03444-2\",\"workflowStages\":[]},\"version\":\"v1\",\"identity\":\"rs-5005888\",\"journalConfig\":\"researchsquare\"},\"__N_SSP\":true},\"page\":\"/article/[identity]/[[...version]]\",\"query\":{\"redirect\":\"/article/rs-5005888\",\"identity\":\"rs-5005888\",\"version\":[\"v1\"]},\"buildId\":\"qtupq5eGEP_6zYnWcrvyt\",\"isFallback\":false,\"isExperimentalCompile\":false,\"dynamicIds\":[84888],\"gssp\":true,\"scriptLoader\":[]}","source_license":"CC-BY-4.0","license_restricted":false}